IP Library Granted Patent US 8,441,246
Granted Patent B2
US 8,441,246 · App. 12/634,218 · Granted May 14, 2013

Temperature independent reference current generator using positive and negative temperature coefficient currents

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Quick Facts
Patent No.
US 8,441,246
App. No.
12/634,218
Granted
May 14, 2013
Kind
B2
Abstract

A temperature independent type reference current generating device and methods thereof. A temperature independent type reference current generating device may include a first reference current generator generating a first reference current having a first element decreasing according to a temperature, a second reference current generator generating a second reference current having a second element increasing according to the temperature, and/or mirroring and outputting a second reference current and/or a mirrored second reference current. A temperature independent type reference current generating device may include a first current mirror mirroring a first reference current and/or outputting a mirrored first reference current, and a second current mirror adding a mirrored first reference current and a mirrored second reference current, and/or mirroring a result of an addition to output a mirrored result as an output reference current.

Claims (30)

1. An apparatus comprising:

a first reference current generator generating a first reference current comprising a first element decreasing according to a temperature;

a second reference current generator generating a second reference current comprising a second element increasing according to the temperature, configured to mirror said second reference current and output a mirrored second reference current;

a first current mirror configured to mirror said first reference current and output a mirrored first reference current; and

a second current mirror configured to add said mirrored first reference current and said mirrored second reference current, and mirror addition result and output a mirrored addition result as an output reference current.

2. The apparatus of claim 1 , wherein said second reference current reference generator is configured to adjust a level of said second element to offset said second element and said first element.

3. The apparatus of claim 1 , comprising a temperature independent type reference current generating device.

4. The apparatus of claim 1 , wherein said first reference current generator comprises:

a first PMOS transistor comprising a source connected to a supply voltage;

a second PMOS transistor comprising a source connected to said supply voltage and a gate and a drain connected to a gate of said first PMOS transistor;

a third PMOS transistor comprising a source connected to a drain of said first PMOS transistor;

a fourth PMOS transistor comprising a source connected to the drain of said second PMOS transistor and a gate and a drain connected to each other;

a first NMOS transistor comprising a source and a gate connected to a drain of said third PMOS transistor;

a second NMOS transistor comprising a source connected to the drain of said fourth PMOS transistor and a gate connected to the gate of said first NMOS transistor;

a third NMOS transistor comprising a source and a gate connected to a drain of said first NMOS transistor;

a fourth NMOS transistor comprising a source connected to a drain of said second NMOS transistor and a gate connected to the gate of said third NMOS transistor;

a first bipolar transistor comprising a base and a collector connected to a drain of said third NMOS transistor and an emitter connected to a ground; and

a first load between a drain of said fourth NMOS transistor and the ground, said first load configured to have said first reference current flow therein.

5. The apparatus of claim 4 , wherein said second reference current generator comprises:

a fifth PMOS transistor comprising a source connected to said supply voltage;

a second bipolar transistor comprising a collector connected to a gate and a drain of said fifth PMOS transistor and a base connected to the base of said first bipolar transistor, the collector configured to have said second reference current flow therein;

a second load between the emitter of said second bipolar transistor and the ground; and

a sixth PMOS transistor comprising a source connected to said supply voltage, a gate connected to the gate of said fifth PMOS transistor and a drain connected to said second current mirror.

6. The apparatus of claim 5 , wherein the second element is adjustable by a ratio of said first load to said second load.

7. The apparatus of claim 5 , wherein said first current mirror comprises:

a seventh PMOS transistor comprising a gate connected to the drain of said second PMOS transistor and a source connected to said supply voltage; and

an eighth PMOS transistor comprising a source connected to a drain of said seventh PMOS transistor, a gate connected to the drain of said fourth PMOS transistor and a drain connected to said second current mirror, the drain of said eighth PMOS transistor configured to have said first reference current flow therein.

8. The apparatus of claim 7 , wherein said second current mirror comprises:

a fifth NMOS transistor comprising a source and a gate connected to said addition result and a drain connected to the ground; and

a sixth NMOS transistor comprising a gate connected to the gate of said fifth NMOS transistor, a source configured to have said output reference current flow therein and a drain connected to the ground.

Assignments (7)
CHANGE OF NAME Recorded Nov 19, 2025
From: TESSERA ADVANCED TECHNOLOGIES, INC.
To: ADEIA SEMICONDUCTOR ADVANCED TECHNOLOGIES INC.
Reel/Frame 073635/0304 →
RELEASE OF SECURITY INTEREST Recorded Jun 11, 2020
From: ROYAL BANK OF CANADA
To: TESSERA, INC.; INVENSAS BONDING TECHNOLOGIES, INC. (F/K/A ZIPTRONIX, INC.); FOTONATION CORPORATION (F/K/A DIGITALOPTICS CORPORATION AND F/K/A DIGITALOPTICS CORPORATION MEMS); INVENSAS CORPORATION; TESSERA ADVANCED TECHNOLOGIES, INC; DTS, INC.; DTS LLC; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
Reel/Frame 052920/0001 →
SECURITY INTEREST Recorded Jun 1, 2020
From: ROVI SOLUTIONS CORPORATION; ROVI TECHNOLOGIES CORPORATION; ROVI GUIDES, INC.; TIVO SOLUTIONS INC.; VEVEO, INC.; INVENSAS CORPORATION; INVENSAS BONDING TECHNOLOGIES, INC.; TESSERA, INC.; TESSERA ADVANCED TECHNOLOGIES, INC.; DTS, INC.; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
To: BANK OF AMERICA, N.A.
Reel/Frame 053468/0001 →
SECURITY INTEREST Recorded Dec 2, 2016
From: INVENSAS CORPORATION; TESSERA, INC.; TESSERA ADVANCED TECHNOLOGIES, INC.; ZIPTRONIX, INC.; DIGITALOPTICS CORPORATION; DIGITALOPTICS CORPORATION MEMS; DTS, LLC; DTS, INC.; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
To: ROYAL BANK OF CANADA, AS COLLATERAL AGENT
Reel/Frame 040797/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 12, 2015
From: STRATEGIC GLOBAL ADVISORS OF OREGON, INC.
To: TESSERA ADVANCED TECHNOLOGIES, INC.
Reel/Frame 035620/0771 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 24, 2015
From: DONGBU HITEK CO., LTD.
To: STRATEGIC GLOBAL ADVISORS OF OREGON, INC.
Reel/Frame 035491/0744 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 9, 2009
From: HONG, SEUNG-HUN
To: DONGBU HITEK CO., LTD.
Reel/Frame 023629/0388 →