Method of manufacturing nano-structure and method of manufacturing a pattern using the method

1. A method of manufacturing a nano-structure, the method comprising:

forming a photoresist pattern on a base substrate including a neutral layer;

forming a sacrifice structure including a first sacrifice block and a second sacrifice block on the base substrate having the photoresist pattern, the sacrifice structure being formed from a first thin film including a first block copolymer;

removing the first sacrifice block from the sacrifice structure;

after removing the first sacrifice block, oxidizing the neutral layer by using the second sacrifice block as a mask to form a chemical pattern;

after oxidizing the neutral layer, removing the second sacrifice block and the photoresist pattern from the base substrate having the chemical pattern; and

forming a nano-structure on the base substrate having the chemical pattern, after removing the second sacrifice block and the photoresist pattern, the nano-structure being formed from a second thin film including a second block copolymer.

2. The method of claim 1 , wherein the first and second block copolymers have a lamella shape.

3. The method of claim 1 , wherein the first and second block copolymers have a cylindrical shape.

4. The method of claim 1 , wherein the photoresist pattern includes a plurality of partition portions extending in a first direction on the base substrate and being repeatedly arranged in a second direction different from the first direction, and the first thin film and the sacrifice structure are formed between the partition portions adjacent to each other.

5. A method of manufacturing a nano-structure, the method comprising:

forming a photoresist pattern on a base substrate, the photoresist pattern including a convex portion and a concave portion, which are repeatedly arranged in a first direction and extend in a second direction different from the first direction;

forming a neutral layer on the base substrate to cover the photoresist pattern; and

forming a nano-structure on the base substrate having the neutral layer, the nano-structure being formed from a thin film including a block copolymer.

6. The method of claim 5 , wherein forming the photoresist pattern comprises:

forming a plurality of supporting patterns extending in the second direction and being spaced apart from each other in the first direction;

coating a photoresist composition on the base substrate having the supporting patterns to form the convex portion in an area overlapping with the supporting pattern; and

forming the concave portion between the supporting patterns adjacent to each other.

7. The method of claim 5 , wherein the photoresist pattern is formed by using a half-tone mask including a light-blocking portion corresponding to the convex portion and a half-tone portion corresponding to the concave portion.

8. The method of claim 5 , wherein the block copolymer is spontaneously arranged due to a thickness gradient of the photoresist pattern to form the nano-structure.

9. The method of claim 5 , wherein the nano-structure includes a first nano-block arranged in the second direction and a second nano-block disposed adjacent to the first nano-block in the first direction, and the first and second nano-blocks are repeatedly arranged in the first direction.

10. A method of manufacturing a nano-structure, the method comprising:

forming a photoresist pattern on the base substrate;

forming a buffer structure on the base substrate to cover the photoresist pattern, the buffer structure being formed from a buffer layer including a cylindrical block copolymer; and

forming a nano-structure directly on the buffer structure, the nano-structure being formed from a thin film including a lamella-shaped block copolymer.

11. The method of claim 10 , wherein the photoresist pattern includes a plurality of partition portions extending in a first direction on the base substrate and being repeatedly arranged in a second direction different from the first direction.

12. The method of claim 11 , wherein the buffer structure comprises:

a plurality of nano-cylinders extending in the first direction between the partition portions adjacent to each other and being arranged in the second direction;

a plurality of half-cylinders disposed on the base substrate having the partition portions and the nano-cylinders, the half-cylinders extending in the first direction and being arranged in the second direction; and

a substrate disposed between the nano-cylinders and the half-cylinders.

13. The method of claim 12 , wherein the nano-structure includes a first nano-block and a second nano-block corresponding to the half-cylinders, and the first and second nano-blocks extend in the first direction and are repeatedly arranged in the second direction.

14. A method of manufacturing a pattern, the method comprising:

forming a sacrifice structure on a base substrate having a mother thin film, a neutral layer and a photoresist pattern, which are sequentially formed on the base substrate, the sacrifice structure including a first sacrifice block and a second sacrifice block and being formed from a first thin film including a first block copolymer;

removing the first sacrifice block from the sacrifice structure;

after removing the first sacrifice block, oxidizing the neutral layer by using the second sacrifice block to form a chemical pattern;

after oxidizing the neutral layer, removing the second sacrifice block and the photoresist pattern from the base substrate having the chemical pattern;

forming a nano-structure on the base substrate having the chemical pattern, after removing the second sacrifice block and the photoresist pattern, the nano-structure including a first nano-block and a second nano-block and being formed from a second thin film including a second block copolymer;

removing the first nano-block; and

patterning the mother thin film by using the second nano-block as a mask to form a pattern.

15. A method of manufacturing a pattern, the method comprising:

forming a photoresist pattern on a base substrate, the photoresist pattern including a convex portion and a concave portion, which extend in a first direction and are repeatedly arranged in a second direction different from the first direction;

sequentially forming a mother thin film and a neutral layer on the base substrate to cover the photoresist pattern;

forming a nano-structure on the base substrate having the neutral layer, the nano-structure including a first nano-block and a second nano-block and being formed from a thin film including a block copolymer;

removing the first nano-block; and

patterning the mother thin film by using the second nano-block as a mask to form a pattern.

16. A method of manufacturing a pattern, the method comprising:

forming a photoresist pattern on a base substrate, the photoresist pattern including a convex portion and a concave portion, which are arranged in a first direction and extend in a second direction different from the first direction;

forming a neutral layer on the base substrate to cover the photoresist pattern;

forming a nano-structure on the base substrate having the neutral layer, the nano-structure including a first nano-block and a second nano-block and being formed from a thin film including a block copolymer;

forming a mother thin film on the nano-structure, of which a portion is removed; and

removing an upper portion of the second nano-block and a portion of the mother thin film, which is disposed on the second nano-block to form a pattern.

17. The method of claim 16 , wherein the mother thin film is formed on the base substrate having the second nano-block after the first nano-block is removed.

18. The method of claim 16 , wherein the mother thin film is formed on the base substrate having a remaining portion of the first nano-block and the second nano-block after the portion of the nano-structure is removed, and the pattern is formed on the remaining portion of the first nano-block.

19. A method of manufacturing a pattern, the method comprising:

forming a photoresist pattern on a base substrate having a mother thin film;

forming a buffer structure on the base substrate to cover the photoresist pattern, the buffer structure formed from a buffer layer including a cylindrical block copolymer; and

forming a nano-structure directly on the buffer structure, the nano-structure including a first nano-block and a second nano-block and being formed from a thin film including a lamella-shaped block copolymer;

removing the first nano-block and a portion of the buffer structure disposed under the first nano-block; and

patterning the mother thin film exposed through a remaining portion of the buffer structure and the second nano-block.

20. The method of claim 19 , wherein the photoresist pattern includes a plurality of partition portions extending in a first direction on the base substrate and being repeatedly arranged in a second direction different from the first direction.

21. The method of claim 20 , wherein the buffer structure comprises:

a plurality of nano-cylinders extending in the first direction between the partition portions adjacent to each other and being arranged in the second direction;

a plurality of half-cylinders disposed on the base substrate having the partition portions and the nano-cylinders, the half-cylinders extending in the first direction and being arranged in the second direction; and

a substrate disposed between the nano-cylinders and the half-cylinders.

22. A method of manufacturing a pattern, the method comprising:

patterning a mother thin film formed on a base substrate to form a metal pattern including a first thickness portion and a second thickness portion thinner than the first thickness portion;

forming a buffer structure on the base substrate having the metal pattern, the buffer structure being formed from a buffer layer including a cylindrical block copolymer; and

forming a nano-structure on the base substrate having the buffer structure, the nano-structure including a first nano-block and a second nano-block and being formed from a preliminary layer including a lamella-shaped block copolymer;

removing the first nano-block and a portion of the buffer structure disposed under the first nano-block; and

patterning the mother thin film exposed through a remaining portion of the buffer structure and the second nano-block.

23. The method of claim 22 , wherein the buffer structure comprises:

a plurality of nano-cylinders disposed on the second thickness portion;

a plurality of half-cylinders disposed on the nano-cylinders and the first thickness portion; and

a substrate disposed between the nano-cylinders and the half-cylinders.