Circuit with electrostatic discharge protection

1. A circuit, comprising:

a trigger device configured to protect a component connected to a node of the circuit during an electrostatic discharge (ESD) event, the trigger device comprising an isolation structure interposed between a gate oxide and an extended drain region, wherein a portion of the extended drain region proximate the isolation structure is substantially metal-free.

2. The circuit of claim 1 , wherein the extended drain region is connected to the node.

3. The circuit of claim 1 , wherein the portion comprises approximately one-half of the extended drain region.

4. The circuit of claim 1 , wherein the portion comprises an entirety of the extended drain region.

5. The circuit of claim 1 , wherein the node comprises a node to be protected and the component is connected between the node to be protected and ground.

6. The circuit of claim 5 , wherein the trigger device further comprises a gate formed over the gate oxide and wherein the ground is connected in series to a resistor that is connected to the gate.

7. The circuit of claim 1 , wherein the portion of the extended drain region proximate the isolation structure is substantially metal-free to a degree that metal protrusion does not occur from the portion toward the isolation structure during the ESD event.

8. The circuit of claim 1 , wherein the trigger device maintains a generally consistent trigger voltage over a plurality of ESD events.

9. A circuit, comprising:

a silicon controlled rectifier (SCR) and a trigger device formed upon a substrate and configured to collectively protect a circuit component from damage during an electrostatic discharge (ESD) event, wherein at least a portion of the SCR is formed upon a deep N-well formed in the substrate and wherein the trigger device includes an isolation structure interposed between a gate oxide layer and an extended drain region, wherein a portion of the extended drain region proximate the isolation structure is substantially metal-free.

10. The circuit of claim 9 , wherein an entirety of the extended drain region is substantially metal-free.

11. The circuit of claim 9 , wherein the SCR includes a first terminal that is isolated from the deep N-well by an N-well.

12. The circuit of claim 11 , wherein the SCR includes a second terminal and a collection region, and wherein both the second terminal and the collection region are disposed in an isolated P-well.

13. The circuit of claim 9 , wherein an entirety of the SCR is formed upon the deep N-well.

14. A circuit, comprising:

a silicon controlled rectifier (SCR) having a first terminal disposed in an N-well and second terminal disposed in a P-well, the first terminal connected to a node to be protected and the second terminal connected to ground;

a trigger device disposed between the first and second terminals and configured to be activated at a trigger voltage, the trigger device including a gate and a gate oxide, an extended drain region and a first isolation structure positioned between the gate and the extended drain region and a second isolation structure positioned between the extended drain region and the first terminal, wherein a first portion of the gate overlays the gate oxide and a second portion of the gate overlays and contacts the first isolation structure to at least partially define the trigger voltage.

15. The circuit of claim 14 , wherein the extended drain region is substantially metal-free.

16. The circuit of claim 14 , wherein the extended drain region is configured to immobilize associated metals from migrating during an ESD event.

17. The circuit of claim 14 , wherein the extended drain region is electrically connected to the node to be protected.

18. The circuit of claim 14 , wherein the N-well and the P-well are formed in a deep N-well.

19. The circuit of claim 14 , wherein the N-well is formed in a deep N-well that terminates at the gate oxide.