Microwave anneal of a thin lamina for use in a photovoltaic cell
View Patent ↗A cleave plane is defined in a semiconductor donor body by implanting ions into the wafer. A lamina is cleaved from the donor body, and a photovoltaic cell is formed which comprises the lamina. The implant may cause some damage to the crystal structure of the lamina. This damage can be repaired by annealing the lamina using microwave energy. If the lamina is bonded to a receiver element, the receiver element may be either transparent to microwaves, or may reflect microwaves, while the semiconductor material absorbs the microwaves. In this way the lamina can be annealed at high temperature while the receiver element remains cooler.
1. A method to form a photovoltaic cell, the method comprising the steps of:
providing a semiconductor lamina bonded to a receiver element, the lamina having a first surface and a second surface opposite the first, the thickness between the first surface and the second surface between about 1.5 microns and about 10 microns,
wherein the lamina is bonded to the receiver element at the first surface, with zero, one, or more layers intervening, and the second surface is exposed, and
wherein the receiver element has a thickness of at least 80 microns; and
annealing the entire thickness of the bonded lamina with microwave energy,
wherein the lamina is suitable for use in the photovoltaic cell, and
wherein the photovoltaic cell comprises the lamina.
2. The method of claim 1 further comprising the step of fabricating the photovoltaic cell.
3. The method of claim 1 wherein the semiconductor lamina is substantially crystalline.
4. The method of claim 1 wherein the receiver element comprises glass, metal, polymer, ceramic, or semiconductor material.
5. The method of claim 4 wherein the receiver element comprises glass.
6. The method of claim 1 wherein a metal layer is disposed between the lamina and the receiver element.
7. The method of claim 6 wherein, during the annealing step, microwave energy enters the lamina at the second surface and is reflected from the metal layer.
8. The method of claim 6 wherein a transparent conductive oxide layer is energy enters the lamina at the second surface and is absorbed at a depth of at least 2 disposed between the lamina and the metal layer.
9. The method of claim 1 wherein, during the annealing step, microwave microns beneath the second surface.
10. The method of claim 1 wherein, during the annealing step, microwave energy enters the lamina at the second surface and is absorbed at a depth of at least 4 microns beneath the second surface.
11. The method of claim 1 wherein the power of the microwave energy during the anneal step is between about 500 watts and about 5000 watts.
12. The method of claim 1 wherein, before the annealing step, the lamina is substantially monocrystalline silicon.
13. The method of claim 1 wherein, before the annealing step, the lamina includes an amorphous silicon, nanocrystalline, or microcrystalline silicon layer.
14. A method to form a photovoltaic cell, the method comprising the steps of: defining a cleave plane in a substantially crystalline semiconductor donor wafer;
bonding the donor wafer at a first surface to a receiver element;
cleaving a substantially crystalline semiconductor lamina from the donor wafer at the cleave plane, wherein the lamina remains bonded to the receiver element at the first surface and a second surface of the lamina is created by cleaving, the second surface opposite the first, and wherein the lamina has a thickness of at least 2 microns; and
annealing the entire thickness of the bonded lamina with microwave energy to repair crystalline defects,
wherein the lamina is suitable for use in the photovoltaic cell, the photovoltaic cell comprising the lamina.
15. The method of claim 14 further comprising fabricating the photovoltaic cell.
16. The method of claim 14 wherein the receiver element comprises glass, metal, polymer, ceramic, or semiconductor material.
17. The method of claim 16 wherein the receiver element comprises glass.
18. The method of claim 14 wherein a metal layer is disposed between the lamina and the receiver element.
19. The method of claim 18 wherein, during the annealing step, microwave energy enters the lamina at the second surface and is reflected from the metal layer.
20. The method of claim 18 wherein a transparent conductive oxide is disposed between the lamina and the metal layer.
21. The method of claim 14 wherein the donor wafer is monocrystalline silicon.
22. The method of claim 14 wherein, during the bonding step, zero, one, or more layers are disposed between the donor wafer and the receiver element.
23. The method of claim 14 further comprising, before the annealing step, etching at the second surface to remove exfoliation damage.