IP Library Granted Patent US 8,071,410
Granted Patent B2
US 8,071,410 · App. 12/637,633 · Granted Dec 6, 2011

Multi spectral sensor

Assignee: BAE Systems Imaging Solutions Inc.
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,071,410
App. No.
12/637,633
Granted
Dec 6, 2011
Kind
B2
Abstract

A light sensor having a light conversion element between first and second electrodes is disclosed. The light conversion element includes a body of semiconductor material having first and second surfaces. The body of semiconductor material is of a first conductivity type and has doping elements in a concentration gradient that creates a first electrostatic field having a magnitude that varies monotonically from the first surface to the second surface. A bias circuit applies a variable potential between the first and second electrodes to create a second electrostatic field having a direction opposite to that of the first electrostatic field and a magnitude determined by the potential. One of the electrodes is transparent to light in a predetermined band of wavelengths. The body of semiconductor material can include an epitaxial body having a monotonically increasing concentration of a doping element as a function of the distance from one the surfaces.

Claims (18)

1. A method for generating an output image of a scene comprising:

causing light from said scene to be focused on a sensor comprising a plurality of pixels, each pixel comprising a variable depletion region that collects charge generated by light from said scene that is focused on said pixel, said variable depletion region comprising a light conversion region having an extent determined by a wavelength control signal;

measuring charge collected by each pixel for a first value of said wavelength control signal to form a first image;

measuring charge collected by each pixel for a second value of said wavelength control signal to form a second image; and

combining said first and second images to generate said output image.

2. The method of claim 1 wherein each pixel comprises a light conversion element comprising a body of semiconductor material having first and second surfaces, said body of semiconductor material comprising a depletion zone having a boundary that is determined by said wavelength control signal;

a first electrode and a second electrode, said body of semiconductor material lying between said first and second electrodes;

a bias circuit that applies said wavelength control signal to first electrode; and

a charge collection circuit for collecting charges created when photons convert in said depletion region.

3. A method for generating an output image of a scene comprising:

causing light from said scene to be focused on a sensor comprising a plurality of pixels, each pixel comprising a variable depletion region that collects charge generated by light from said scene that is focused on said pixel, said variable depletion region comprising a light conversion region having an extent determined by a wavelength control signal; and

measuring charge collected by each pixel for a first value of said wavelength control signal to form a first image;

wherein each pixel comprises a light conversion element comprising a body of semiconductor material having first and second surfaces, said body of semiconductor material comprising a depletion zone having a boundary that is determined by said wavelength control signal;

a first electrode and a second electrode, said body of semiconductor material lying between said first and second electrodes;

a bias circuit that applies said wavelength control signal to first electrode; and

a charge collection circuit for collecting charges created when photons convert in said depletion region,

wherein said body of semiconductor material comprises a doping gradient that generates a static electric field in said body of semiconductor material and wherein said bias circuit creates a variable electric field having a direction opposite to that of said static electric field when said bias circuit applies said wavelength control signal to said first electrode.

4. The method of claim 3 wherein one of said static electric field and said variable electric field comprises an electric field having a magnitude that varies monotonically from said first surface to said second surface.

Assignments (2)
CHANGE OF NAME Recorded Dec 6, 2024
From: BAE SYSTEMS IMAGING SOLUTIONS INC.
To: FAIRCHILD IMAGING, INC.
Reel/Frame 069531/0646 →
CHANGE OF NAME Recorded Aug 28, 2012
From: FAIRCHILD IMAGING, INC.
To: BAE SYSTEMS IMAGING SOLUTIONS INC.
Reel/Frame 028859/0797 →
Continuity (2)
Division 11182310 · Jul 14, 2005
Related Publication 20100091166A1 · Apr 15, 2010