IP Library Granted Patent US 8,247,255
Granted Patent B2
US 8,247,255 · App. 12/638,653 · Granted Aug 21, 2012

Modular system and process for continuous deposition of a thin film layer on a substrate

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Quick Facts
Patent No.
US 8,247,255
App. No.
12/638,653
Granted
Aug 21, 2012
Kind
B2
Abstract

A process and associated system for vapor deposition of a thin film layer on a photovoltaic (PV) module substrate is includes establishing a vacuum chamber and introducing the substrates individually into the vacuum chamber. The substrates are pre-heated as they are conveyed through the vacuum chamber, and are then conveyed in serial arrangement through a vapor deposition apparatus in the vacuum chamber wherein a thin film of a sublimed source material is deposited onto an upper surface of the substrates. The substrates are conveyed through the vapor deposition apparatus at a controlled constant linear speed such that leading and trailing sections of the substrate in a conveyance direction are exposed to the same vapor deposition conditions within the vapor deposition apparatus. The vapor deposition apparatus may be supplied with source material in a manner so as not to interrupt the vapor deposition process or non-stop conveyance of the substrates through the vapor deposition apparatus.

Claims (33)

1. A process for vapor deposition of a thin film layer on a photovoltaic module substrate, comprising:

establishing a vacuum chamber maintained at an operation vacuum;

introducing substrates individually into the vacuum chamber such that the vacuum chamber is maintained at the operational vacuum;

pre-heating the substrates as the substrates are conveyed through the vacuum chamber; and

conveying the pre-heated substrates in serial arrangement through a vapor deposition apparatus in the vacuum chamber wherein a thin film layer of a sublimed source material is deposited onto an upper surface of the substrates in the vapor deposition apparatus;

wherein the substrates are conveyed through the vapor deposition apparatus at a controlled constant linear speed such that leading and trailing sections of the substrate in a conveyance direction are exposed to the same vapor deposition conditions within the vapor deposition apparatus to achieve a substantially uniform thickness of the thin film layer on an upper surface of the substrate.

2. The process as in claim 1 , further comprising cooling the substrates downstream of the vapor deposition apparatus within the vacuum chamber, and subsequently individually removing each of the cooled substrates from the vacuum chamber.

3. The process as in claim 2 , further comprising post-heating the substrates as the substrates exit the vapor deposition apparatus and prior to cooling the substrates so that the substrates are not cooled until the entire substrate has exited the vapor deposition apparatus.

4. The process as in claim 1 , wherein the substrates are individually introduced into the vacuum chamber through an entry vacuum lock process, and individually removed from the vacuum chamber through an exit vacuum lock process such that vacuum within the vacuum chamber is maintained during entry and exit of the substrates.

5. The process as in claim 1 , wherein the vacuum chamber is defined by a plurality of interconnected modular units, with each of the modular units having an independent conveyor, the process further comprising controlling the individual conveyors to achieve an overall continuous flow of the substrates through the vacuum chamber at a desired heating rate, vapor deposition rate, and cool down rate.

6. The process as in claim 1 , wherein the vapor deposition apparatus is supplied with source material from an externally refillable feed system in a manner so as not to interrupt the vapor deposition process or non-stop conveyance of the substrates through the vapor deposition apparatus.

7. The process as in claim 1 , wherein the source material is CdTe, and wherein the thin film CdTe layer is deposited over a CdS thin film layer previously applied to the substrates.

8. The process as in claim 1 , wherein the substrates comprise glass.

9. A process for vapor deposition of a thin film layer on a photovoltaic module substrate, comprising:

establishing a vacuum chamber maintained at an operation vacuum;

introducing glass substrates individually into the vacuum chamber such that the vacuum chamber is maintained at the operational vacuum;

pre-heating the glass substrates as the glass substrates are conveyed through the vacuum chamber; and

conveying the pre-heated glass substrates in serial arrangement through a vapor deposition apparatus in the vacuum chamber wherein a thin film layer of a sublimed source material is deposited onto an upper surface of the glass substrates in the vapor deposition apparatus;

wherein the glass substrates are conveyed through the vapor deposition apparatus at a controlled constant linear speed such that leading and trailing sections of the glass substrate in a conveyance direction are exposed to the same vapor deposition conditions within the vapor deposition apparatus to achieve a substantially uniform thickness of the thin film layer on an upper surface of the glass substrate.

10. The process as in claim 9 , further comprising cooling the glass substrates downstream of the vapor deposition apparatus within the vacuum chamber, and subsequently individually removing each of the cooled glass substrates from the vacuum chamber.

11. The process as in claim 10 , further comprising post-heating the glass substrates as the glass substrates exit the vapor deposition apparatus and prior to cooling the glass substrates so that the glass substrates are not cooled until the entire glass substrate has exited the vapor deposition apparatus.

12. The process as in claim 9 , wherein the glass substrates are individually introduced into the vacuum chamber through an entry vacuum lock process, and individually removed from the vacuum chamber through an exit vacuum lock process such that vacuum within the vacuum chamber is maintained during entry and exit of the glass substrates.

13. The process as in claim 9 , wherein the vacuum chamber is defined by a plurality of interconnected modular units, with each of the modular units having an independent conveyor, the process further comprising:

controlling the individual conveyors to achieve an overall continuous flow of the glass substrates through the vacuum chamber at a desired heating rate, vapor deposition rate, and cool down rate.

14. The process as in claim 9 , wherein the vapor deposition apparatus is supplied with source material from an externally refillable feed system in a manner so as not to interrupt the vapor deposition process or non-stop conveyance of the glass substrates through the vapor deposition apparatus.

15. The process as in claim 9 , wherein the source material is CdTe, and wherein the thin film layer is deposited over a CdS thin film layer previously applied to the glass substrates.

16. A process for vapor deposition of a thin film layer on a photovoltaic module substrate, comprising:

establishing a vacuum chamber maintained at an operational vacuum;

introducing glass substrates individually into the vacuum chamber such that the vacuum chamber is maintained at the operational vacuum;

pre-heating the glass substrates as the glass substrates are conveyed through the vacuum chamber;

conveying the pre-heated glass substrates in serial arrangement through a vapor deposition apparatus in the vacuum chamber; and

depositing a thin film CdTe layer onto an upper surface of the glass substrates in the vapor deposition apparatus;

wherein the glass substrates are conveyed through the vapor deposition apparatus at a controlled constant linear speed such that leading and trailing sections of the glass substrate in a conveyance direction are exposed to the same vapor deposition conditions within the vapor deposition apparatus to achieve a substantially uniform thickness of the thin film CdTe layer on an upper surface of the glass substrate.

Assignments (8)
RELEASE OF SECURITY INTEREST Recorded Feb 13, 2026
From: JPMORGAN CHASE BANK, N.A.
To: FIRST SOLAR, INC.
Reel/Frame 074858/0364 →
SECURITY INTEREST Recorded Jul 10, 2023
From: FIRST SOLAR, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 064237/0462 →
TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENT RIGHTS Recorded Nov 15, 2021
From: JPMORGAN CHASE BANK, N.A.
To: FIRST SOLAR, INC.
Reel/Frame 058132/0566 →
PATENT SECURITY AGREEMENT Recorded Jul 12, 2017
From: FIRST SOLAR, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 043177/0581 →
CORRECTIVE ASSIGNMENT TO CORRECT THE APPLICATION NUMBER FROM '13/301162' PREVIOUSLY RECORDED ON REEL 032045 FRAME 0657. ASSIGNOR(S) HEREBY CONFIRMS THE CORRECT APPLICATION NUMBER SHOULD BE '13/601162'. Recorded Feb 10, 2014
From: FIRST SOLAR MALAYSIA SDN. BHD.
To: FIRST SOLAR, INC.
Reel/Frame 032239/0005 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 14, 2014
From: FIRST SOLAR MALAYSIA SDN. BHD.
To: FIRST SOLAR, INC.
Reel/Frame 032045/0657 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 5, 2013
From: PRIMESTAR SOLAR, INC.
To: FIRST SOLAR MALAYSIA SDN. BHD.
Reel/Frame 031581/0891 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 15, 2009
From: PAVOL, MARK JEFFREY; BLACK, RUSSELL WELDON; MURPHY, BRIAN ROBERT; RATHWEG, CHRISTOPHER; LITTLE, EDWIN JACKSON; REED, MAX WILLIAM
To: PRIMESTAR SOLAR, INC.
Reel/Frame 023656/0948 →