Method of p-type doping of cadmium telluride

1. A method of p-type doping cadmium telluride (CdTe), said method comprising the steps of:

(a) providing a first component comprising cadmium telluride (CdTe) comprising an interfacial region; and

(b) subjecting the CdTe to a functionalizing treatment to obtain p-type doped CdTe, said functionalizing treatment comprising a thermal treatment of at least a portion of the interfacial region in the presence of (1) a first material comprising a p-type dopant compromising bismuth, phosphorous, arsenic, or antimony, (2) second material comprising a halogen, and (3) at least one of EDA, a dilute solution of bromine in mthanol, or a mixture of nitric acid and phosphoric acid.

2. The method of claim 1 , wherein a ratio of an amount of the first material to an amount of the second material lies within the range from about 0.01 ppm to about 100 ppm.

3. The method of claim 1 , wherein a physical form of the CdTe is polycrystalline.

4. The method of claim 1 , wherein the second material comprises cadmium chloride, hydrochloric acid, chlorine gas, or combinations thereof.

5. The method of claim 1 , wherein a physical form of the first material is selected from the group consisting of liquid, and gas.

6. The method of claim 1 , wherein a physical form of the second material is selected from the group consisting of liquid, and gas.

7. The method of claim 1 , wherein the functionalizing treatment comprises depositing the first material on at least a portion of the interfacial region prior to the thermal treatment.

8. The method of claim 1 , wherein the thermal treatment comprises a first annealing treatment.

9. The method of claim 8 , wherein the first annealing treatment is performed at temperatures that lie within a range from about 300 degrees Celsius to about 500 degrees Celsius.

10. The method of claim 8 , wherein the first annealing treatment is performed for a time-period that lies within a range from about 1 minute to about 60 minutes.

11. The method of claim 8 , wherein an environment of the CdTe during the first annealing treatment comprises an oxidizing environment.

12. The method of claim 1 , wherein the halogen comprises chlorine.

13. A method of making a photovoltaic cell, said method comprising the steps of:

(a) providing a first component comprising a cadmium telluride (CdTe) layer comprising an interfacial region;

(b) subjecting the CdTe layer to a functionalizing treatment to obtain a green component, said functionalizing treatment comprising a thermal treatment of at least a portion of the interfacial region in the presence of (1) a first material comprising a p-type dopant (2) a second material comprising a halogen, and (3) at least one EdA, a dilute solution of bromine in methanol, or a mixture of nitric acid and phosphoric acid; wherein the functionalizing treatment effects an incorporation of the p-type dopant into the CdTe layer, wherin the p-type dopant comprises phosphorus, arsenic, antimony, or bismuth;

(c) subjecting the green component to a processing treatment; and

(d) disposing a second component adjacent the CdTe layer to form the photovoltaic cell.

14. The process of claim 13 , wherein the thermal treatment comprises a first annealing treatment.

15. The method of claim 14 , wherein the first annealing treatment is performed at temperatures that lie within a range from about 300 degrees Celsius to about 500 degrees Celsius.

16. The method of claim 14 , wherein the first annealing treatment is performed for a time-period that lies within a range from about 1 minute to about 60 minutes.

17. The method of claim 14 , wherein an environment of the interfacial region during the thermal treatment comprises an oxidizing environment.

18. The method of claim 13 , wherein the functionalizing treatment comprises depositing the first material on at least a portion of the interfacial region prior to the thermal treatment.

19. The method of 13 , wherein the processing treatment comprises a soaking treatment.

20. The method of claim 19 , the solvent treatment comprises the use of a solvent comprising ethylene di-amine.

21. The method of claim 13 , wherein the processing treatment comprises deposition of a copper layer on at least a portion of the interfacial region.

22. The method of claim 13 , wherein the processing treatment comprises a second annealing treatment.

23. The method of claim 13 , wherein the first component comprises a layer comprising a transparent conducting oxide.

24. The method of claim 23 , wherein the transparent conducting oxide comprises aluminum doped zinc oxide, indium tin oxide, fluorine tin oxide, cadmium tin oxide, or combinations thereof.

25. The method of claim 13 , wherein the first component comprises a layer comprising a high resistance oxide.

26. The method of claim 25 , wherein the high resistance oxide comprises zinc tin oxide, aluminum oxide, tin oxide, gallium oxide, silicon oxide, indium oxide, or combinations thereof.

27. The method of claim 13 , wherein the first component comprises a layer comprising cadmium sulphide.

28. The method of claim 13 , wherein the second component comprises a back-contact layer.

29. The method of claim 28 , wherein the back-contact layer comprises a plurality of layers.

30. The method of claim 29 , wherein each of the plurality of layers is disposed sequentially adjacent the CdTe layer.

31. The method of claim 13 , wherein disposing the second component is performed via a deposition method comprising at least one of screen printing, sputtering, evaporating, electroplating, electrodepositing, or combinations thereof.

32. The method of claim 13 , wherein the second material comprises cadmium chloride, hydrochloric acid, chlorine gas, or combinations thereof.

33. The method of claim 13 , wherein a ratio of an amount of the first material to an amount of the second material lies within the range from about 0.01 ppm to about 100 ppm.

34. The method of claim 13 , wherein the halogen comprises chlorine.