Method of making photovoltaic cell

1. A method of making a photovoltaic (PV) cell, said method comprising the steps of:

(a) providing a first component comprising a cadmium telluride (CdTe) layer comprising an interfacial region;

(b) subjecting the first component to a functionalizing treatment to obtain a first green component, said functionalizing treatment comprising treating at least a portion of the interfacial region with a first material comprising copper and a second material comprising chlorine;

(c) subjecting the first green component to a first annealing treatment to obtain a second green component;

(d) subjecting the second green component to a processing treatment; and

(e) disposing a second component adjacent the CdTe layer to form the PV cell.

2. The method of claim 1 , wherein the processing treatment comprises a soaking treatment.

3. The method of claim 2 , the soaking treatment comprises the use of a solvent comprising ethylene di-amine (EDA).

4. The method of claim 1 , wherein the processing treatment comprises deposition of a copper layer on at least a portion of the interfacial region.

5. The method of claim 1 , wherein the processing treatment comprises a second annealing treatment.

6. The method of claim 1 , wherein the first component comprises a layer comprising a transparent conducting oxide.

7. The method of claim 6 , wherein the transparent conducting oxide comprises aluminum doped zinc oxide, indium tin oxide, fluorine tin oxide, cadmium tin oxide, or combinations thereof.

8. The method of claim 1 , wherein the first component comprises a layer comprising a high resistance oxide.

9. The method of claim 8 , wherein the high resistance oxide comprises zinc tin oxide, aluminum oxide, tin oxide, gallium oxide, silicon oxide, indium oxide, or combinations thereof.

10. The method of claim 1 , wherein the first component comprises a layer comprising cadmium sulphide.

11. The method of claim 1 , wherein the second component comprises a back-contact layer.

12. The method of claim 11 , wherein the back-contact layer comprises a plurality of layers.

13. The method of claim 12 , wherein each of the plurality of layers is disposed sequentially adjacent the CdTe layer.

14. The method of claim 1 , wherein disposing the second component is performed via a deposition method comprising at least one of screen printing, sputtering, evaporating, electroplating, electrodepositing, or combinations thereof.

15. The method of claim 1 , wherein the second material comprises cadmium chloride.

16. The method of claim 1 , wherein a ratio of an amount of the first material to an amount of the second material lies within the range from about 0.01 ppm to about 100 ppm.

17. The method of claim 1 , wherein the first annealing treatment is performed at temperatures that lie within a range from about 300° C. to about 500° C.

18. The method of claim 1 , wherein the first annealing treatment is performed for a time-period that lies within a range from about 1 minute to about 60 minutes.

19. The method of claim 1 , wherein an environment of the first green component during the first annealing treatment comprises an oxidizing environment.

20. The method of claim 1 , wherein the CdTe layer is rendered substantially p-type after step (c).

21. A method for making a photovoltaic cell, said method comprising the steps of:

(a) providing a first component comprising a cadmium telluride (CdTe) layer comprising an interfacial region;

(b) subjecting the first component to a functionalizing treatment to obtain a first green component, said functionalizing treatment comprising soaking at least a portion of the interfacial region in the presence of a first solution comprising copper;

(c) subjecting the first green component to a first annealing treatment in the presence of a second solution comprising chlorine to obtain a second green component;

(d) subjecting the second green component to a processing treatment; and

(e) disposing a second component adjacent the CdTe layer to form the photovoltaic cell.

22. The method of claim 21 , wherein the processing treatment comprises a soaking treatment.

23. The method of claim 22 , the soaking treatment comprises the use of a solvent comprising EDA.

24. The method of claim 21 , wherein the processing treatment comprises deposition of a copper layer on at least a portion of the interfacial region.

25. The method of claim 21 , wherein the processing treatment comprises a second annealing treatment.

26. The method of claim 21 , wherein the first solution comprises an a solvent.

27. The method of claim 26 , wherein the solvent comprises EDA.

28. The method of claim 21 , wherein the first component comprises a layer comprising a transparent conducting oxide.

29. The method of claim 28 , wherein the transparent conducting oxide comprises aluminum doped zinc oxide, indium tin oxide, fluorine tin oxide, cadmium tin oxide, or combinations thereof.

30. The method of claim 29 , wherein the first component comprises a layer comprising a high resistance oxide.

31. The method of claim 30 , wherein the high resistance oxide comprises zinc tin oxide, aluminum oxide, tin oxide, gallium oxide, silicon oxide, indium oxide, or combinations thereof.

32. The method of claim 21 , wherein the first component comprises a layer comprising cadmium sulphide.

33. The method of claim 21 , wherein the second component comprises a back-contact layer.

34. The method of claim 33 , wherein the back-contact layer comprises a plurality of layers.

35. The method of claim 34 , wherein each of the plurality of layers is disposed sequentially adjacent the CdTe layer.

36. The method of claim 21 , wherein disposing the second component is performed via a deposition method comprising at least one of screen printing, sputtering, evaporating, electroplating, electrodepositing, or combinations thereof.

37. The method of claim 21 , wherein the second solution comprises cadmium chloride.

38. The method of claim 21 , wherein a concentration of the copper within the first solution lies within the range from about 0.01 ppm to about 100 ppm.

39. The method of claim 21 , wherein the first annealing treatment is performed at temperatures that lie within a range from about 300° C. to about 500° C.

40. The method of claim 21 , wherein the first annealing treatment is performed for a time-period that lies within a range from about 1 minute to about 60 minutes.

41. The method of claim 21 , wherein an environment of the first green component during the first annealing comprises an oxidizing environment.

42. The method of claim 21 , wherein the CdTe layer is rendered substantially p-type after step (c).