Semiconductor package having insulated metal substrate and method of fabricating the same
View Patent ↗Provided is a semiconductor package in which an adhesion force between an insulation metal substrate and a molding member is increased by removing a solder mask layer from the insulation metal substrate and a method of fabricating the semiconductor package. The semiconductor package includes an insulation metal substrate that includes a base member, an insulating layer disposed on the base member, and conductive patterns formed on the insulating layer. Semiconductor chips are arranged on the conductive patterns. Solder mask patterns are arranged on the conductive patterns to surround the semiconductor chips. Leads are electrically connected to the conductive patterns through wires. A sealing member is arranged on an upper surface and side surfaces of the substrate to cover portions of the leads, the wires, the semiconductor chips, and the solder mask patterns.
1. A method of fabricating a semiconductor package, comprising:
preparing an insulation metal substrate comprising a base member, an insulating layer arranged on the base member, conductive patterns formed on the insulating layer, and a solder mask layer formed on the insulating layer including the conductive patterns;
removing the solder mask layer to expose portions of the conductive patterns;
mounting semiconductor chips on exposed portions of the conductive patterns;
electrically connecting the conductive patterns to leads through wires; and
forming a sealing member on an upper surface and side surfaces of the insulation metal substrate to cover the semiconductor chips, the wires, and portions of the leads and to be in contact with remaining exposed portions of the conductive patterns.
2. The method of claim 1 wherein the solder mask layer is patterned to remain around the semiconductor chips or is completely removed.
3. The method of claim 1 wherein the solder mask layer is patterned to define an annular solder mask spaced from the edge of the conductive patterns and exposing a die attach region on the conductive patterns surrounded by said annular solder mask.
4. The method of claim 1 wherein the solder mask layer comprises an epoxy resin.
5. The method of claim 1 wherein the sealing member comprises a transfer molded epoxy resin.
6. The method of claim 1 wherein the conductive patterns are formed of Cu, Au, Ag, Al, or Ni.
7. The method of claim 1 wherein the semiconductor package comprises a power module package.