Power module having stacked flip-chip and method of fabricating the power module
View Patent ↗Provided are a power module having a stacked flip-chip and a method of fabricating the power module. The power module includes a lead frame; a control device part including a control device chip; a power device part including a power device chip and being electrically connected to the lead frame; and an interconnecting substrate of which the control and power device parts are respectively disposed at upper and lower portions, and each of the control and power device chips may be attached to one of the lead frame and the interconnecting substrate using a flip-chip bonding method. The method includes forming bumps on power and control device chips on a wafer level; separately sawing the power and control device chips into individual chips; adhering the power device chip onto a thermal substrate and the control device chip onto an interconnecting substrate; combining a lead frame, the thermal substrate, and the interconnecting substrate with one another in a multi-jig; and sealing the power and control device chips, and the control and power device chips may be attached to one of the lead frame and the interconnecting substrate using a flip-chip bonding method.
1. A power module having a stacked flip-chip, comprising:
a lead frame;
a control device part comprising a control device chip;
a power device part comprising a power device chip; and
an interconnecting substrate, wherein the control device chip is disposed on an upper surface of the interconnecting substrate using only a plurality of flip-chip electrical bonds, and the power device chip is disposed on a lower surface of the interconnecting substrate using only a plurality of flip-chip electrical bonds,
wherein the power device chip is disposed between the interconnecting substrate and the lead frame and is electrically connected to the lead frame via the lower surface of the interconnecting substrate and inter-substrate solder balls between the interconnecting substrate and the lead frame,
wherein the lead frame comprises first portion and second portion, the first portion is separated from the second portion, and two power device chips are respectively disposed on the first and second portions.
2. The power module of claim 1 , wherein the power device chip of the power device part is adhered onto the lead frame through a solder adhesive of solder wire or solder paste type.
3. The power module of claim 1 , wherein the power and control device chips are attached to the interconnecting substrate through bumps or solder or bumps and solder.
4. The power module of claim 1 , further comprising a sealant which seals the power and control device parts and comprises a convex structure comprising a predetermined portion protruding from a lower portion of the lead frame.
5. A power module having a stacked flip-chip, comprising:
a control device part comprising a control device chip;
a power device part comprising a power device chip;
a lead frame on which the power device part is stacked; and
an interconnecting substrate which is disposed on the lead frame and wherein the power device chip of the power device part is disposed at lower portion of the interconnecting substrate using only a plurality of flip-chip electrical bonds and the control device chip of the control device part is disposed at upper portion of the interconnecting substrate using only a plurality of flip-chip electrical bonds, wherein the power device chip is electrically connected to the lead frame via the lower surface of the interconnecting substrate and inter-substrate solder balls between the interconnecting substrate and the lead frame,
wherein the lead frame comprises first portion and second portion, the first portion is separated from the second portion, and two power device chips are respectively disposed on the first and second portions.
6. The power module of claim 5 , wherein the lead frame operates as a thermal substrate and is electrically connected to the lower surface of interconnecting substrate through the inter-substrate solder balls.
7. The power module of claim 5 , further comprising a sealant which seals the power and control device parts and has a convex structure comprising a predetermined portion protruding from a lower portion of the lead frame.
8. The power module of claim 5 , wherein the power device chip comprises a MOS-FET (metal-oxide semiconductor field effect transistor).
9. The power module of claim 5 , wherein the power module has an SMD (surface mount device) package structure.