IP Library Granted Patent US 9,166,071
Granted Patent B2
US 9,166,071 · App. 12/647,286 · Granted Oct 20, 2015

Polarization resistant solar cell design using an oxygen-rich interface layer

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Quick Facts
Patent No.
US 9,166,071
App. No.
12/647,286
Granted
Oct 20, 2015
Kind
B2
Abstract

A polarization resistant solar cell using an oxygen-rich interface layer is provided. The oxygen-rich interface layer may be comprised of SiO x N y , which may have a graded profile that varies between oxygen-rich proximate to the solar cell to nitrogen-rich distal to the solar cell. A silicon oxide passivation layer may be interposed between the solar cell and the SiO x N y graded dielectric layer. The graded SiO x N y dielectric layer may be replaced with a non-graded SiO x N y dielectric layer and a SiN AR coating.

Claims (22)

1. A solar cell comprising:

a substrate comprised of silicon of a first conductivity type;

a layer of silicon of a second conductivity type disposed on said substrate; and

a graded layer forming a direct interface with said layer of silicon, wherein said graded layer comprises SiO x N y , wherein the graded layer composition includes non-zero amounts of oxygen throughout the entirety of the graded layer, and non-zero amounts of nitrogen throughout the entirety of the graded layer and the graded layer oxygen content varies non-linearly from oxygen-rich proximate to said layer of silicon to nitrogen-rich distal to said layer of silicon; and wherein said graded layer has a thickness of between 30 and 200 nanometers.

2. The solar cell of claim 1 , wherein a ratio of oxygen within said graded layer of SiO x N y to the sum of oxygen and nitrogen with said graded layer of SiO x N y varies between a first range within a first region of said graded layer to a second range within a second region of said graded layer, wherein said first region of said graded layer is proximate to said layer of silicon and said second region of said graded layer is distal to said layer of silicon, and wherein said first range is 0.5 to 0.99 and said second range is 0.01 to 0.5.

3. The solar cell of claim 1 , wherein a ratio of oxygen within said graded layer of SiO x N y to the sum of oxygen and nitrogen within said graded layer of SiO x N y varies between a first range within a first region of said graded layer to a second range within a second region of said graded layer, wherein said first region of said graded layer is proximate to said layer of silicon and said second region of said graded layer is distal to said layer of silicon, and wherein said first range is 0.6 to 0.99 and said second range is 0.01 to 0.4.

4. The solar cell of claim 1 , wherein a ratio of oxygen within said graded layer of SiO x N y to the sum of oxygen and nitrogen with said graded layer of SiO x N y follows a stepped profile between a first range within a first region of said graded layer to a second range within a second region of said graded layer, wherein said first region of said graded layer is proximate to said layer of silicon and said second region of said graded layer is distal to said layer of silicon.

5. The solar cell of claim 1 , wherein said graded layer has a thickness of between 50 and 140 nanometers.

6. The solar cell of claim 1 , wherein said graded layer has a refractive index in the range of 1.5 to 2.4.

7. A solar cell comprising:

a substrate comprised of silicon of a first conductivity type;

a layer of silicon of a second conductivity type disposed on said substrate; and

a dielectric stack disposed on said layer of silicon, wherein said dielectric stack is comprised of:

a first dielectric layer comprised of SiO x , wherein said first dielectric layer forms a direct interface with said layer of silicon;

a graded layer forming a direct interface with said first dielectric layer, wherein said graded layer comprises SiO x N y , wherein the graded layer composition includes non-zero amounts of oxygen throughout the entirety of the graded layer, and non-zero amounts of nitrogen throughout the entirety of the graded layer and the graded layer composition varies non-linearly from oxygen-rich proximate to said first dielectric layer to nitrogen-rich distal to said first dielectric layer; and

said dielectric stack has a thickness of between 3 to 260 nanometers.

8. The solar cell of claim 7 , wherein said dielectric stack has a refractive index in the range of 1.5 to 2.4.

9. The solar cell of claim 7 , wherein said first dielectric layer has a thickness of between 1 to 60 nanometers, said second dielectric layer has a thickness of between 1 to 100 nanometers, and said third dielectric layer has a thickness of between 1 to 100 nanometers.

10. The solar cell of claim 7 , wherein said first dielectric layer has a thickness of between 1 to 30 nanometers, said second dielectric layer has a thickness of between 1 to 30 nanometers, and said third dielectric layer has a thickness of between 10 to 90 nanometers.

11. The solar cell of claim 7 , wherein said first dielectric layer has a thickness of between 5 to 20 nanometers, said second dielectric layer has a thickness of between 1 to 20 nanometers, and said third dielectric layer has a thickness of between 1 to 20 nanometers, and said third dielectric layer has a thickness of between 40 to 90 nanometers.

12. The solar cell of claim 7 , wherein a ratio of oxygen within said graded layer of SiO x N y to the sum of oxygen and nitrogen with said graded layer of SiO x N y varies between a first range within a first region of said graded layer to a second range within a second region of said graded layer, wherein said first region of said graded layer is proximate to said first dielectric layer and said second region of said graded layer is distal to said first dielectric layer, and wherein said first range is 0.5 to 0.99 and said second range is 0.01 to 0.5.

13. The solar cell of claim 7 , wherein a ratio of oxygen within said graded layer of SiO x N y to the sum of oxygen and nitrogen with said graded layer of SiO x N y varies between a first range within a first region of said graded layer to a second range within a second region of said graded layer, wherein said first region of said graded layer is proximate to said first dielectric layer and said second region of said graded layer is distal to said first dielectric layer, and wherein said first range is 0.6 to 0.99 and said second range is 0.01 to 0.4.

Assignments (10)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 26, 2023
From: SUNNUVELLIR SLHF
To: HIGHLAND MATERIALS, INC.
Reel/Frame 064388/0757 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 25, 2023
From: SILICOR MATERIALS, INC.
To: SUNNUVELLIR SLHF
Reel/Frame 062511/0046 →
LIEN Recorded May 26, 2017
From: SILICOR MATERIALS, INC.
To: SCHWEGMAN, LUNDBERG & WOESSNER, P.A.
Reel/Frame 042592/0974 →
SECURITY INTEREST Recorded Dec 27, 2016
From: SILICOR MATERIALS, INC.
To: SUNNUVELLIR SLHF
Reel/Frame 040777/0104 →
LICENSE Recorded Oct 13, 2015
From: SILICOR MATERIALS, INC.
To: SMS GROUP GMBH
Reel/Frame 036811/0327 →
RELEASE Recorded Aug 25, 2015
From: SILICON VALLEY BANK
To: SILICOR MARTERIALS, INC. FKA CALISOLAR INC.
Reel/Frame 036448/0613 →
CHANGE OF NAME Recorded Nov 20, 2012
From: CALISOLAR INC.
To: SILICOR MATERIALS INC.
Reel/Frame 029397/0001 →
SECURITY AGREEMENT Recorded Oct 27, 2011
From: CALISOLAR INC.
To: SILICON VALLEY BANK
Reel/Frame 027131/0042 →
SECURITY AGREEMENT Recorded Oct 25, 2011
From: CALISOLAR INC.
To: GOLD HILL CAPITAL 2008, LP
Reel/Frame 027119/0928 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 24, 2009
From: PHAN, BILL; ZHANG, RENHUA; GORMAN, JOHN; SIDELKHEIR, OMAR; RAKOTONIAINA, JEAN PATRICE; BLOSSE, ALAIN PAUL; KAES, MARTIN
To: CALISOLAR INC.
Reel/Frame 023703/0861 →