Oscillator apparatus
View Patent ↗An apparatus including a resonator electrode and a second electrode separated from the resonator electrode by a gap having a size that facilitates electron transfer across the gap, wherein the resonator electrode is a resonator electrode mounted for oscillatory motion relative to the second electrode that results in a size of the gap between the resonator electrode and the second electrode being time variable; a feedback circuit configured to convey an electron transfer signal dependent upon electron transfer across the gap as a feedback signal; and a drive electrode adjacent the resonator electrode configured to receive a feedback signal from a feedback circuit configured to provide a time-varying feedback signal dependent upon electron transfer across a gap.
1. A method comprising:
depositing first material in nanoscale channels of a template;
depositing a nanoscale layer of a second material, different to the first material, in the nanoscale channels over the first material;
depositing third material in the nanoscale channels over the second material;
removing the template; and
removing the nanoscale layer of second material.
2. A method as claimed in claim 1 , wherein the template is removed by an etch and the nanoscale layer of second material is removed by a different etch.
3. A method as claimed in claim 1 , further comprising applying the template to a surface of a substrate before depositing first material in nanoscale channels of the template.
4. A method as claimed in claim 3 , wherein the substrate is epitaxial semiconductor.
5. A method as claimed in claim 1 , wherein the template is anodic aluminum oxide.
6. A method as claimed in claim 1 , wherein the channels have a cross-sectional area that is substantially normal to their longest dimension and the cross-sectional area has a maximum span that is less than 100 nm
7. A method as claimed in claim 1 , wherein the channels are open-ended and extend through the template to a substrate.
8. A method as claimed in claim 1 , wherein the first material is a semiconductor in epitaxial registration with a substrate supporting the template.
9. A method as claimed in claim 1 , wherein the first material is a single crystalline material.
10. A method as claimed in claim 1 , wherein the first material is a semiconductor or a doped semiconductor.
11. A method as claimed in claim 1 , wherein depositing first material in nanoscale channels of a template uses vapor-liquid-solid growth of a semiconductor.
12. A method as claimed in claim 1 , wherein the nanoscale layer of second material is a sacrificial layer.
13. A method as claimed in claim 1 , wherein the second material is conductive.
14. A method as claimed in claim 1 , wherein the nanoscale layer is deposited using atomic layer deposition.
15. A method as claimed in claim 1 , wherein the thickness of the second material is less than 10 nm.
16. A method as claimed in claim 1 , wherein the thickness of the second material is controlled to a tolerance of less than 1 nm.
17. A method as claimed in claim 1 , wherein the third material is deposited using either vapor-liquid-solid growth or electro-deposition.
18. A method as claimed in claim 1 , further comprising depositing the third material so that it extends beyond the channels and forms a continuous layer connected to multiple channels.