Method and device for CNT length control
View Patent ↗A method for manufacturing a carbon nanotube (CNT) of a predetermined length is disclosed. The method includes generating an electric field to align one or more CNTs and severing the one or more aligned CNTs at a predetermined location. The severing each of the aligned CNTs may include etching the predetermined location of the one or more aligned CNTs and applying a voltage across the one or more etched CNTs.
1. A method for manufacturing a plurality of carbon nanotubes (CNTs), comprising:
positioning a plurality of CNTs between two electrodes;
generating a first electric field between the two electrodes to align the plurality of CNTs;
after aligning the plurality of CNTs, forming one or more etched regions in each of the plurality of aligned CNTs, the one or more etched regions each configured to be severed in response to an applied second electric field between the two electrodes; and
after forming the one or more notched regions in each of the plurality of aligned CNTs, generating the second electric field between the two electrodes to sever the plurality of aligned CNTs at the one or more etched regions to form a plurality of severed CNTs.
2. The method of claim 1 , wherein the one or more etched regions are formed by:
etching one or more predetermined locations of the plurality of aligned CNTs to form the one or more notched regions in each of the plurality of aligned CNTs, thereby forming a plurality of etched CNTs; and
wherein generating the second electric field to sever the plurality of aligned CNTs includes applying the second electric field across the plurality of etched CNTs.
3. The method of claim 1 , further comprising:
forming the plurality of aligned CNTs using a chemical vapor deposition (CVD) prior to positioning the plurality of CNTs between the two electrodes.
4. The method of claim 1 , prior to the positioning, further comprising:
providing a solution containing the plurality of CNTs on a substrate.
5. The method of claim 2 , prior to etching, further comprising:
depositing on the plurality of aligned CNTs a mask layer having one or more slits to etch the one or more etched regions in each of the plurality of aligned CNTs.
6. The method of claim 5 , wherein etching is performed by a directional etching.
7. The method of claim 6 , wherein the directional etching comprises an oxygen plasma etching or a reactive ion etching (RIE).
8. The method of claim 1 , further comprising;
separating the plurality of severed CNTs based on diameter.
9. The method of claim 8 , wherein the separation is performed by a centrifugation.
10. The method of claim 1 , wherein the one or more etched regions are located at a middle of a total length of each of the plurality of aligned CNTs.
11. The method of claim 1 , wherein a total length of each of the plurality of severed CNTs is substantially the same.
12. The method of claim 1 , wherein a total length of each of the plurality of severed CNTs is in the range of approximately 1-500 μm.