Semiconductor device and method of manufacturing the same
View Patent ↗A semiconductor device includes: an active region defined by a device isolation layer on and/or over a substrate; a second conductive well on and/or over the active region; an extended drain formed at one side of the second conductive well; a gate electrode on and/or over the second conductive well and the extended drain; and a source and a drain formed at both sides of the gate electrode, in which extended regions are formed at the corners of the second conductive well under the gate electrode.
1. A device comprising:
an active region defined by a device isolation layer over a substrate;
a second conductive well over the active region;
an extended drain formed at one side of the second conductive well;
a gate electrode over the second conductive well and the extended drain; and
a source and a drain formed at both sides of the gate electrode,
wherein extended regions are formed at corners of the second conductive well under the gate electrode, wherein the extended regions at the corners of the second conductive well are formed by extending the corners of the second conductive well in a direction towards the extended drain at the interface between the second conductive well and the device isolation layer under the gate electrode, wherein said extending the corners leaves an unextended portion between the extended corners.
2. The device of claim 1 , wherein the gate electrode is formed to overlap the second conductive well and the extended drain.
3. The device of claim 2 , wherein the extended regions at the corners of the second conductive well are formed such that the portions, at the corners of the gate channel in the width direction, of the second conductive well protrude along the edge of the device isolation layer.
4. The device of claim 1 , comprising a high-density region formed at one side of the source on the second conductive well.
5. The device of claim 1 , wherein the device isolation layer is on the substrate.
6. The device of claim 1 , wherein the second conductive well is on the active region.
7. The device of claim 1 , wherein the gate electrode is on the second conductive well and the extended drain.
8. A method, comprising:
defining an active region over a substrate, using a device isolation layer;
forming a second conductive well in the active region;
forming an extended drain at one side of the second conductive well;
forming a gate electrode over the second conductive well and the extended drain; and
forming a source and a drain at both sides of the gate electrode,
wherein extended regions are formed at corners of the second conductive well under the gate electrode,
wherein the extended regions at the corners of the second conductive well are formed by extending the corners of the second conductive well in a direction towards the extended drain at the interface between the second conductive well and the device isolation layer under the gate electrode, wherein said extending the corners leaves an unextended portion between the extended corners.
9. The method of claim 8 , wherein the gate electrode is formed to overlap the second conductive well and the extended drain.
10. The method of to claim 9 , wherein the extended regions at the corners of the second conductive well are formed such that the portions, at the corners of the gate channel in the width direction, of the second conductive well protrude along the edge of the device isolation layer.
11. The method of claim 8 , comprising forming a high-density region at one side of the source on the second conductive well.
12. A method, comprising:
defining an active region on a substrate, using a device isolation layer;
forming a second conductive well in the active region;
forming an extended drain at one side of the second conductive well;
forming a gate electrode on the second conductive well and the extended drain; and
forming a source and a drain at both sides of the gate electrode,
wherein extended regions are formed at corners of the second conductive well under the gate electrode,
wherein the extended regions at the corners of the second conductive well are formed by extending the corners of the second conductive well in a direction towards the extended drain at the interface between the second conductive well and the device isolation layer under the gate electrode, wherein said extending the corners leaves an unextended portion between the extended corners.
13. The method of claim 12 , wherein the gate electrode is formed to overlap the second conductive well and the extended drain.
14. The method of to claim 13 , wherein the extended regions at the corners of the second conductive well are formed such that the portions, at the corners of the gate channel in the width direction, of the second conductive well protrude along the edge of the device isolation layer.
15. The method of claim 12 , comprising forming a high-density region at one side of the source on the second conductive well.
16. The method of claim 12 , wherein the device isolation comprises shallow trench isolation.
17. The method of claim 12 , wherein the device isolation layer comprises local oxidation of silicon.