Chip level package of light-emitting diode

1. A light-emitting diode device, comprising:

a permanent substrate having a first surface and a second surface;

a first electrode on the first surface of the permanent substrate;

an adhesive layer on where the first surface of the permanent substrate is not covered by the first electrode;

a growth substrate on the adhesive layer;

a patterned semiconductor structure on the growth substrate comprising:

a first conductivity type semiconductor layer; and

a second conductivity type semiconductor layer on the first conductivity type semiconductor layer wherein the second conductivity type is different from the first conductivity type;

a third electrode and a fourth electrode on the patterned semiconductor structure, which electrically connected with the first conductivity type semiconductor layer and the second conductivity type semiconductor layer respectively;

an electrical connecting structure on the sidewall of the patterned semiconductor structure, wherein the third electrode and the fourth electrode electrically connected with the first electrode by the electrical connecting structure;

an insulation layer located on the sidewall of the patterned semiconductor structure and between the electrical connecting structure to insulate electrically the patterned semiconductor structure and the electrical connecting structure; and

a reflective layer between the growth substrate and the permanent substrate.

2. The light-emitting diode device according to claim 1 , wherein the growth substrate is a polished thinner substrate.

3. The light-emitting diode device according to claim 1 , wherein the permanent substrate further including a plurality of through-holes for thermal conduction.

4. The light-emitting diode device according to claim 1 , wherein the permanent substrate can be embedded with a passive device, wherein the passive device electrically connected with patterned semiconductor structure in series or parallel.

5. The light-emitting diode device according to claim 1 , wherein the material of the permanent substrate can be ceramic material, glass, composite material, or polymer material.

6. The light-emitting diode device according to claim 1 , wherein the material of the patterned semiconductor structure comprising at least one or more elements selected from the group consisting of gallium, aluminum, indium, arsenic, phosphorous, and nitrogen.

7. The light-emitting diode device according to claim 1 , further including a light extraction microstructure on the patterned semiconductor structure.

8. The light-emitting diode device according to claim 7 , wherein the shape of the light extraction microstructure is column, Fresnel lens, or saw.

9. The light-emitting diode device according to claim 1 , further including a photonic crystal structure on the patterned semiconductor structure.

10. The light-emitting diode device according to claim 1 , wherein the insulation layer is silicon nitride or silicon oxide.

11. The light-emitting diode device according to claim 1 , further including a second electrode on the second surface of the permanent substrate.

12. The light-emitting diode device according to claim 11 , wherein the permanent substrate further including a plurality of though-holes is filed with electrically conductive material to connect the first electrode and the second electrode.

13. A light-emitting apparatus operating by alternating current, comprising:

a circuit board; and

a plurality of light-emitting diodes on the circuit board, wherein the light-emitting diodes structure is formed according to claim 1 .

14. The light-emitting apparatus according to claim 13 , wherein the light emitting diodes electrically connected in series.