IP Library Granted Patent US 8,817,439
Granted Patent B2
US 8,817,439 · App. 12/653,101 · Granted Aug 26, 2014

Power delivery circuit having protection switch for reverse battery condition

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Quick Facts
Patent No.
US 8,817,439
App. No.
12/653,101
Granted
Aug 26, 2014
Kind
B2
Abstract

According to one disclosed embodiment, a power delivery circuit includes a switch for protection of a load in a reverse battery condition. The load is coupled in cascade with the protection switch, where the protection switch disconnects the load from the battery in the reverse battery condition. The protection switch does not include p-n junction diodes present in conventional protection switches using FETs. The protection switch utilizes, for example, a GaN HEMT, that does not include a p-n junction diode. Thus, the threat of internal conduction in the protection switch during a reverse battery condition is eliminated. The power delivery circuit also protects the load in a load dump condition.

Claims (29)

1. A power delivery circuit including a protection switch, said power delivery circuit comprising:

a load cascaded downstream of said protection switch in a reverse battery condition;

said protection switch electrically disconnecting said load from a battery and blocking a reverse voltage from said load while holding a gate of said protection switch at substantially ground potential in said reverse battery condition;

wherein said protection switch does not include a p-n junction diode connectable to said battery, thereby preventing an internal conduction in said protection switch in said reverse battery condition.

2. The power delivery circuit of claim 1 , wherein said protection switch comprises a GaN transistor.

3. The power delivery circuit of claim 1 , wherein said protection switch comprises a HEMT GaN transistor.

4. The power delivery circuit of claim 1 , wherein said protection switch comprises a HEMT GaN transistor having its gate coupled to its drain through at least one resistor.

5. The power delivery circuit of claim 1 , wherein said protection switch comprises a HEMT GaN transistor having its gate coupled to its drain through a coupling element.

6. The power delivery circuit of claim 5 , wherein said coupling element includes at least a resistor.

7. The power delivery circuit of claim 1 , wherein said protection switch comprises a negative threshold GaN transistor.

8. The power delivery circuit of claim 1 , wherein said protection switch disconnects said load from said battery in a load dump condition.

9. The power delivery circuit of claim 8 , wherein said protection switch disconnects said load from said battery in said load dump condition when a voltage from said battery exceeds a load maximum threshold voltage.

10. The power delivery circuit of claim 8 , further comprising a negative voltage charge pump for disconnecting said load from said battery in said load dump condition.

11. The power delivery circuit of claim 1 , wherein said power delivery circuit is included in an automotive electrical system.

12. A power delivery circuit including a protection switch, said power delivery circuit comprising:

a load cascaded downstream of said protection switch in a reverse battery condition;

said protection switch electrically disconnecting said load from a battery and blocking a reverse voltage from said load while holding a gate of said protection switch at substantially ground potential in said reverse battery condition;

wherein said protection switch does not include a silicon field effect transistor connectable to said battery.

13. The power delivery circuit of claim 12 , wherein said protection switch disconnects said load from said battery in a load dump condition.

14. The power delivery circuit of claim 12 , wherein said protection switch includes a HEMT GaN transistor.

15. A power delivery circuit including a protection switch, said delivery circuit comprising:

a load cascaded downstream of said protection switch in a reverse battery condition;

said protection switch electrically disconnecting said load from a battery and blocking a reverse voltage from said load while holding a gate of said protection switch at substantially ground potential in said reverse battery condition;

wherein said protection switch comprises a GaN transistor.

16. The power delivery circuit of claim 15 , wherein said protection switch comprises a HEMT GaN transistor.

17. The power delivery circuit of claim 15 , wherein said protection switch comprises a negative threshold GaN transistor.

18. The power delivery circuit of claim 15 , wherein said protection switch comprises a GaN transistor having its gate coupled to its drain through a coupling element.

19. The power delivery circuit of claim 18 , wherein said coupling element includes at least a resistor.

20. The power delivery circuit of claim 15 , wherein said protection switch disconnects said load from said battery in a load dump condition.

Assignments (2)
CHANGE OF NAME Recorded Jul 23, 2018
From: INTERNATIONAL RECTIFIER CORPORATION
To: INFINEON TECHNOLOGIES AMERICAS CORP.
Reel/Frame 046612/0968 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 3, 2010
From: CLEMENTE, STEFANO; BOCCHIOLA, CESARE
To: INTERNATIONAL RECTIFIER CORPORATION
Reel/Frame 023895/0013 →