Semiconductor device and method of manufacturing the same
View Patent ↗A semiconductor device includes: diffusion layers formed at the front surface of a substrate; low-resistance parts formed at the front surfaces of the diffusion layers so as to have resistance lower than the diffusion layer; and rear contact electrodes passing through the substrate from the rear surface of the substrate to be connected to the low-resistance parts through the diffusion layers.
1. A semiconductor device comprising:
diffusion layers formed at the front surface of a substrate;
low-resistance parts formed at the front surfaces of the diffusion layers so as to have resistance lower than the diffusion layer; and
rear contact electrodes passing through the substrate from the rear surface of the substrate to be connected to the low-resistance parts through the diffusion layers,
wherein a memory element is connected to the rear contact electrodes.
2. The semiconductor device according to claim 1 , further comprising:
at least a semiconductor area formed at the front surface of the substrate,
wherein a gate electrode is formed on the semiconductor area through a gate insulating film, and
the diffusion layers are formed in the semiconductor area on both sides of the gate electrode.
3. The semiconductor device according to claim 2 ,
wherein the substrate has an insulating layer and the semiconductor area formed on the insulating layer, and
a transistor having the gate electrode formed on the semiconductor area through the gate insulating film and source and drain areas formed of the diffusion layers in the semiconductor area on both sides of the gate electrode is a completely depleted transistor.
4. The semiconductor device according to claim 3 ,
wherein the low-resistance parts are composed of silicide layers.
5. The semiconductor device according to claim 4 , further comprising:
a silicide layer formed at the front surface of the gate electrode,
wherein the rear contact electrodes are connected to the silicide layer formed at one diffusion layer of the diffusion layers and the silicide layer formed at the gate electrode.
6. The semiconductor device according to claim 2 ,
wherein an insulating film is formed laterally to the gate electrode through a space.
7. The semiconductor device according to claim 2 ,
wherein sidewalls are formed at the sidewalls of the gate electrode, and
the sidewalls are composed of low-dielectric-constant films having dielectric constant lower than silicon oxide.
8. The semiconductor device according to claim 2 ,
wherein the low-resistance parts are composed of silicide layers.
9. The semiconductor device according to claim 8 , further comprising:
a silicide layer formed at the front surface of the gate electrode,
wherein the rear contact electrodes are connected to the silicide layer formed at one diffusion layer of the diffusion layers and the silicide layer formed at the gate electrode.
10. The semiconductor device according to claim 1 ,
wherein the low-resistance parts are composed of silicide layers.
11. The semiconductor device according to claim 10 , further comprising:
a silicide layer formed at the front surface of the gate electrode,
wherein the rear contact electrodes are connected to the silicide layer formed at one diffusion layer of the diffusion layers and the silicide layer formed at the gate electrode.
12. The semiconductor device according to claim 1 ,
wherein the low-resistance parts are composed of electrodes.
13. The semiconductor device according to claim 1 ,
wherein the memory element is composed of a capacitor.
14. The semiconductor device according to claim 1 ,
wherein the memory element is composed of a resistance-change memory element.
15. The semiconductor device according to claim 1 ,
wherein the memory element is composed of a magnetoresistive memory element.
16. The semiconductor device according to claim 1 ,
wherein the memory element is composed of a ferroelectric memory element.