Tightly-coupled near-field communication-link connector-replacement chips

1. An electronic product, comprising:

a first substrate with a first conduction path disposed thereon;

a second substrate with a second conduction path disposed thereon;

a first near-field transmitter disposed on the first substrate and connected to the first conduction path, the first near-field transmitter operable to transmit a first carrier signal at a first transmit carrier frequency; and

a first near-field receiver disposed on the second substrate and connected to the second conduction path, the first near-field receiver operable to near-field couple with the first near-field transmitter at the first transmit carrier frequency;

wherein the first substrate and the second substrate are spaced apart relative to each other such that the first near-field transmitter and the first near-field receiver are disposed within a near-field coupling distance of each other at the first transmitter carrier frequency, wherein the first transmitter carrier frequency is in the extremely high frequency (EHF) range, wherein the first near-field transmitter is operable to translate a data signal from the first conduction path to a modulated carrier and the first near-field receiver is operable to translate the modulated carrier to a baseband signal on the second conduction path; and

wherein the first conduction path comprises at least one pair of conductors configured to communicate at least one differential signal.

2. The electronic product of claim 1 , wherein the first near-field transmitter is formed, at least partially, in a first integrated circuit; and the first near-field receiver is formed, at least partially, in a second integrated circuit.

3. The electronic product of claim 1 , wherein the first near-field transmitter includes an antenna disposed within the first integrated circuit.

4. The electronic product of claim 1 , wherein the first near-field transmitter includes an antenna disposed on the first substrate and coupled to the first integrated circuit.

5. An electronic product, comprising:

a first substrate with a first conduction path disposed thereon;

a second substrate with a second conduction path disposed thereon;

a first near-field transmitter disposed on the first substrate and connected to the first conduction path, the first near-field transmitter operable to transmit a first carrier signal at a first transmit carrier frequency; and

a first near-field receiver disposed on the second substrate and connected to the second conduction path, the first near-field receiver operable to near-field couple with the first near-field transmitter at the first transmit carrier frequency;

wherein the first substrate and the second substrate are spaced apart relative to each other such that the first near-field transmitter and the first near-field receiver are disposed within a near-field coupling distance of each other at the first transmitter carrier frequency, wherein the first transmitter carrier frequency is in the extremely high frequency (EHF) range, wherein the first near-field transmitter is operable to translate a data signal from the first conduction path to a modulated carrier and the first near-field receiver is operable to translate the modulated carrier to a baseband signal on the second conduction path; and

wherein the second conduction path comprises at least one pair of conductors configured to communicate at least one differential signal.

6. The electronic product of claim 5 , wherein the first near-field transmitter is formed, at least partially, in a first integrated circuit; and the first near-field receiver is formed, at least partially, in a second integrated circuit.

7. The electronic product of claim 5 , wherein the first near-field transmitter includes an antenna disposed within the first integrated circuit.

8. The electronic product of claim 5 , wherein the first near-field transmitter includes an antenna disposed on the first substrate and coupled to the first integrated circuit.

9. A connector replacement, comprising:

a first near-field transmitter, the first near-field transmitter operable to modulate a first carrier signal at a first transmit carrier frequency in the extremely high frequency (EHF) range; and

a first near-field receiver, the first near-field receiver operable to near-field couple with the first near-field transmitter at the first transmit carrier frequency;

wherein the near-field coupling occurs only if the first near-field transmitter and the first near-field receiver are disposed within a distance from each other that is less than 2D 2 /lambda, where D is the largest dimension of the source of the radiation, and lambda is the wavelength of the first transmit carrier frequency; and

wherein the first near-field transmitter is part of a first near-field transceiver on a first integrated circuit; the first near-field receiver is part of a second near-field transceiver on a second integrated circuit; the first integrated circuit is adapted to couple to a first differential signal path on a first substrate; and the second integrated circuit is adapted to couple to a second differential signal path on a second substrate.

10. The connector replacement of claim 9 , wherein the first near-field transmitter is disposed on a first integrated circuit.

11. The connector replacement of claim 9 , wherein the first near-field receiver is disposed on a second integrated circuit.

12. The connector replacement of claim 9 , wherein the first near-field transmitter is part of a first near-field transceiver on a first integrated circuit.

13. The connector replacement of claim 9 , wherein the first near-field receiver is part of a second near-field transceiver on a second integrated circuit.