Solid-state image pickup apparatus, electronic apparatus, and method of manufacturing a solid-state image pickup apparatus
View Patent ↗Disclosed is a solid-state image pickup apparatus including a photoelectric converter formed on a substrate, a wiring portion formed above the photoelectric converter and constituted of multilayer wirings, and an insulating portion in which the multilayer wirings of the wiring portion are embedded, the insulating portion having a refractive index larger than a silicon oxide.
1. A solid-state image pickup apparatus, comprising:
a photoelectric converter formed in a substrate and a transistor formed on the substrate;
a wiring portion formed above the photoelectric converter and constituted of a plurality of wirings in a multilayer structure;
an insulating portion in which all of the wirings of the wiring portion are embedded, the insulating portion having a refractive index larger than a silicon oxide; and
a number of color filters arranged above the wiring portion,
in which the plurality of wirings in the wiring portion represent all wirings arranged in a layer manner which are above the photoelectric converter and the transistor and below the color filters.
2. The solid-state image pickup apparatus according to claim 1 ,
wherein the insulating portion is made of a material selected from a group consisting of a silicon nitride, a silicon oxynitride, a hafnium oxide, and a tantalum oxide.
3. A solid-state image pickup apparatus, comprising:
a photoelectric converter formed in a substrate and a transistor formed on the substrate;
a wiring portion formed above the photoelectric converter and constituted of a plurality of wirings in a multilayer structure;
a silicon oxide portion in which all of the multilayer wirings of the wiring portion are embedded;
an insulating portion embedded in the silicon oxide portion, said insulating portion extends from a position above the wiring portion to a position beyond that of a lowermost wiring of the multilayer wirings and which is above the photoelectric converter, the insulating portion having a refractive index larger than the silicon oxide; and
a number of color filters arranged above the wiring portion,
in which the plurality of wirings in the wiring portion represent all wirings arranged in a layer manner which are above the photoelectric converter and the transistor and below the color filters.
4. The solid-state image pickup apparatus according to claim 3 ,
wherein the insulating portion is made of a material selected from a group consisting of a silicon nitride, a silicon oxynitride, a hafnium oxide, and a tantalum oxide.
5. An electronic apparatus, comprising:
a solid-state image pickup apparatus to output an electric signal corresponding to an amount of light received; and
a signal processing apparatus to process the electric signal output from the solid-state image pickup apparatus,
wherein the solid-state image pickup apparatus includes
a photoelectric converter formed in a substrate and a transistor formed on the substrate,
a wiring portion formed above the photoelectric converter and constituted of a plurality of wirings in a multilayer structure,
an insulating portion in which all of the multilayer wirings of the wiring portion are embedded, the insulating portion having a refractive index larger than a silicon oxide, and
a number of color filters arranged above the wiring portion,
in which the plurality of wirings in the wiring portion represent all wirings arranged in a layer manner which are above the photoelectric converter and the transistor and below the color filters.
6. An electronic apparatus, comprising:
a solid-state image pickup apparatus to output an electric signal corresponding to an amount of light received; and
a signal processing apparatus to process the electric signal output from the solid-state image pickup apparatus,
wherein the solid-state image pickup apparatus includes
a photoelectric converter formed in a substrate and a transistor formed on the substrate,
a wiring portion formed above the photoelectric converter and constituted of a plurality of wirings in a multilayer structure,
a silicon oxide portion in which all of the multilayer wirings of the wiring portion are embedded,
an insulating portion embedded in the silicon oxide portion, said insulating portion extends from a position above the wiring portion to a position beyond that of a lowermost wiring of the multilayer wirings and which is above the photoelectric converter, the insulating portion having a refractive index larger than the silicon oxide, and
a number of color filters arranged above the wiring portion,
in which the plurality of wirings in the wiring portion represent all wirings arranged in a layer manner which are above the photoelectric converter and the transistor and below the color filters.