Solid-state imaging device
View Patent ↗A solid-state imaging device includes: a photoelectric conversion portion that receives an incident light from a back surface side of a silicon layer to perform photoelectric conversion on the incident light; and a pixel transistor portion that outputs signal charges generated in the photoelectric conversion portion towards a front surface side of the silicon layer, wherein a gettering layer having internal stress is provided on the front surface side of the silicon layer at a position to overlap the photoelectric conversion portion on a plan view layout thereof.
1. A solid-state imaging device comprising:
a photoelectric conversion portion that receives an incident light from a back surface side of a silicon layer to perform photoelectric conversion on the incident light; and
a pixel transistor portion that outputs signal charges generated in the photoelectric conversion portion towards a front surface side of the silicon layer, wherein
a gettering layer having internal stress is provided on the front surface side of the silicon layer at a position to overlap the photoelectric conversion portion on a plan view layout in a substrate surface thereof.
2. The solid-state imaging device according to claim 1 , wherein the gettering layer is formed directly on the front surface of the silicon layer.
3. The solid-state imaging device according to claim 1 , wherein
the gettering layer is formed on the silicon layer via a gate insulating film; and
a negative potential is applied to the gettering layer.
4. The solid-state imaging device according to claim 3 , wherein the gate insulating film is formed by a gate insulating film which is at the same layer as either a gate insulating film of a transistor of the pixel transistor portion or a gate insulating film of a transistor of a peripheral circuit portion which is formed on the periphery of a pixel portion having the photoelectric conversion portion and the pixel transistor portion.
5. An imaging apparatus comprising:
a light-condensing optical unit that condenses an incident light;
an imaging unit having a solid-state imaging device which receives the light condensed by the light-condensing optical unit and performs photoelectric conversion on the light; and
a signal processing portion that processes signals having been subjected to the photoelectric conversion, the solid-state imaging device including:
a photoelectric conversion portion that receives an incident light from a back surface side of a silicon layer to perform photoelectric conversion on the incident light; and
a pixel transistor portion that outputs signal charges generated in the photoelectric conversion portion towards a front surface side of the silicon layer, wherein
a gettering layer having internal stress is provided on the front surface side of the silicon layer at a position to overlap the photoelectric conversion portion on a plan view layout in a substrate surface thereof.