Nitride semiconductor light-emitting device and method for fabrication thereof
View Patent ↗An adhesion layer of a hexagonal crystal is laid on a facet an optical resonator of a nitride semiconductor laser bar having a nitride-based III-V group compound semiconductor layer, and a facet coat is laid on the adhesion layer. In this way, a structure in which the facet coat is laid on the adhesion layer is obtained.
1. A method for fabricating a nitride semiconductor light-emitting device, comprising:
a step of forming a III-V group nitride semiconductor layer of a hexagonal crystal system;
a step of forming a resonator facet by subjecting the III-V group nitride semiconductor layer to cleaving, vapor-phase etching, or wet etching;
a step of forming an adhesion layer of a same, hexagonal, crystal system as the III-V group nitride semiconductor layer such that the adhesion layer makes contact with the resonator facet; and
a step of forming a facet coat on a surface of the adhesion layer.
2. The method for fabricating a nitride semiconductor light-emitting device according to claim 1 ,
wherein the adhesion layer is formed by sputtering.
3. The method for fabricating a nitride semiconductor light-emitting device according to claim 1 ,
wherein the adhesion layer is formed by plasma CVD.
4. The method for fabricating a nitride semiconductor light-emitting device according to claim 1 , further comprising:
a step of cleaning the resonator facet by irradiating the resonator facet with plasma after the step of forming the resonator facet.
5. The method for fabricating a nitride semiconductor light-emitting device according to claim 1 ,
wherein step of forming the adhesion layer is performed at a temperature of 200° C. or less.