Method of manufacturing a semiconductor device
View Patent ↗A method of manufacturing a semiconductor device on a semiconductor substrate, includes the steps of forming a first metal film on a front surface of the semiconductor substrate; forming a second metal film on the surface of the first metal film; activating a surface of the second metal film to provide an activated surface; and forming a plated film on the activated surface by a wet plating method in a plating bath that includes a reducing agent that is oxidized during plating and that has a rate of oxidation, wherein the second metal film is a metal film mainly composed of a first substance that enhances the rate of oxidation of the reducing agent in the plating bath. Wet plating is preferably an electroless process.
1. A method of manufacturing a semiconductor device on a semiconductor substrate, comprising:
forming a first metal film on a front surface of the semiconductor substrate;
forming a second metal film on the front surface of the first metal film;
activating a surface of the second metal film to provide an activated surface; and
forming a plated film on the activated surface by a wet plating method in a plating bath that includes a reducing agent that is oxidized during plating and that has a rate of oxidation,
wherein the second metal film is a metal film mainly composed of a first substance that enhances the rate of oxidation of the reducing agent in the plating bath.
2. The method of manufacturing a semiconductor device according to claim 1 , further comprising:
forming a pattern in the second metal film by an etching process prior to activating the surface of the second metal film; and
forming a pattern in the first metal film by an etching process after the pattern in the second metal film is formed and prior to activating the surface of the second metal film.
3. The method of manufacturing a semiconductor device according to claim 1 , further comprising:
forming a pattern in the first metal film by an etching process prior to forming the second metal film on the surface of the first metal film; and
forming a pattern in the second metal film by an etching process after forming the second metal film and prior to activating the surface of the second metal film.
4. The method of manufacturing a semiconductor device according to claim 1 , wherein activating the surface of the second metal layer includes removing a surface oxide film from the surface of the second metal film.
5. The method of manufacturing a semiconductor device according to claim 1 , wherein forming the plated film includes forming a first plated film on the surface of the second metal film that is mainly composed of a second substance that enhances the rate of oxidation of the reducing agent in the plating bath.
6. The method of manufacturing a semiconductor device according to claim 5 , wherein the second substance is nickel.
7. The method of manufacturing a semiconductor device according to claim 5 , wherein forming the plated film further comprises forming a second plated film on the surface of the first plated film that is mainly composed of a third substance that brings about a substitution reaction for the first plated film.
8. The method of manufacturing a semiconductor device according to claim 7 , wherein the third substance is gold.
9. The method of manufacturing a semiconductor device according to claim 1 , wherein the first metal film is formed by one of an evaporation method or a sputtering method.
10. The method of manufacturing a semiconductor device according to claim 1 , wherein the first metal film is mainly composed of aluminum.
11. The method of manufacturing a semiconductor device according to claim 1 , wherein the first metal film is composed of an alloy of one of aluminum-silicon or aluminum-silicon-copper.
12. The method of manufacturing a semiconductor device according to claim 1 , wherein the second metal film is a laminated metal film formed by laminating a third metal film having a high melting point and a film mainly composed of the first substance in this order.
13. The method of manufacturing a semiconductor device according to claim 12 , wherein the third metal film is composed of a metal selected from the group consisting of titanium, molybdenum, chromium, cobalt, and tungsten.
14. The method of manufacturing a semiconductor device according to claim 1 , wherein the first substance is nickel.
15. The method of manufacturing a semiconductor device according to claim 1 , wherein the wet plating method is an electroless plating method.
16. The method of manufacturing a semiconductor device according to claim 1 , further comprising:
forming a rear surface electrode on the rear surface of the semiconductor substrate after forming the second metal film and before activating the surface of the second metal film,
wherein the first metal film and the second metal film form a front surface electrode on the front surface of the semiconductor substrate, and
wherein forming the plated film includes simultaneously forming plated films on the surface of the front surface electrode and on the surface of the rear surface electrode.
17. The method of manufacturing a semiconductor device according to claim 16 , further comprising:
reducing thickness of the semiconductor substrate to a value not larger than 200 μm by working the rear surface of the semiconductor substrate between forming the first metal film and forming the rear surface electrode.