Solid-state imaging device, manufacturing method of solid-state imaging device and electronic apparatus
View Patent ↗A solid-state imaging device, includes: plural unit pixels including a photoelectric conversion portion converting incident light into an electrical signal, and a waveguide having a quadratic curve surface at an inner surface and introducing the incident light to the photoelectric conversion portion.
1. A solid-state imaging device, comprising:
plural unit pixels, each unit pixel including:
a photoelectric conversion portion for converting incident light into an electrical signal, and
a waveguide having a parabolic surface at an inner surface and introducing the incident light to the photoelectric conversion portion,
wherein the waveguide extends from a surface of the photoelectric conversion portion.
2. The solid-state imaging device according to claim 1 , wherein the unit pixel includes a color filter, and a position of the focal point of the parabolic surface in an optical axis direction differs according to colors of the color filter.
3. The solid-state imaging device according to claim 1 , wherein the unit pixel includes a color filter, and a spot size of light condensed to the focal point of the parabolic surface differs according to colors of the color filter.
4. A manufacturing method of a solid-state imaging device having plural unit pixels, each unit pixel including a photoelectric conversion portion converting incident light into an electrical signal, and a waveguide having a parabolic curve surface at an inner surface and introducing the incident light to the photoelectric conversion portion, the method comprising the steps of:
executing processing of performing etching repeatedly to an insulating layer in which the waveguide is formed while gradually increasing a hole size of a photoresist in plural stages to form a hole for the waveguide in the insulating layer, wherein a surface of the hole is a parabolic curve; and
providing the photoelectric conversion portion in the hole such that the waveguide extends from a surface of the photoelectric conversion portion.
5. The manufacturing method of the solid-state imaging device according to claim 4 , wherein the power of an etching gas is changed in the etching processes in the plural stages.
6. An electronic apparatus, comprising:
a solid-state imaging device having plural unit pixels, each unit pixel including:
a photoelectric conversion portion converting incident light into an electrical signal, and
a waveguide having a parabolic curve surface at an inner surface and introducing the incident light to the photoelectric conversion portion,
wherein the waveguide extends from a surface of the photoelectric conversion portion.