Method of manufacturing an organic thin film transistor
View Patent ↗An organic thin film transistor that has good adhesiveness and good contact resistance as well as allows ohmic contact between an organic semiconductor layer and a source electrode and a drain electrode, and its manufacturing method. There is also provided a flat panel display device using the organic thin film transistor. The organic thin film transistor includes a source electrode, a drain electrode, an organic semiconductor layer, a gate insulating layer, and a gate electrode formed on a substrate, and a carrier relay layer including conductive polymer material formed at least between the organic semiconductor layer and the source electrode or the organic semiconductor layer and the drain electrode.
1. A method of manufacturing an organic thin film transistor, comprising:
forming a hydrophobic material layer on an entire surface of a substrate;
forming at least one opening in the hydrophobic material layer; and
forming a carrier relay layer in the at least one opening, the carrier relay layer being arranged at least between an organic semiconductor layer and a source electrode or between the organic semiconductor layer and a drain electrode, the carrier relay layer comprising a conductive polymer material.
2. The method of claim 1 , wherein the hydrophobic material layer is produced by a process selected from the group consisting of spin coating and dipping.
3. The method of claim 1 , wherein the at least one opening in the hydrophobic material layer is produced by a laser beam scanning process.
4. The method of claim 1 , further comprising removing remaining conductive polymer material from between the source electrode and the drain electrode after the forming the carrier relay layer in the opening.
5. The method of claim 4 , wherein the removing of the remaining conductive polymer material from between the source electrode and the drain electrode is achieved by a process selected from the group consisting of laser beam, ultraviolet ray, or electron beam scanning.
6. The method of claim 1 , further comprising:
forming the source and drain electrodes on the substrate before the formation of the hydrophobic material layer; and
forming the organic semiconductor layer on the carrier relay layer and on the hydrophobic material layer.
7. The method of claim 6 , further comprising forming a gate electrode after the formation of the organic semiconductor layer.
8. The method of claim 6 , further comprising forming a gate electrode before the formation of the source and drain electrodes.
9. The method of claim 1 , wherein the at least one opening comprises an opening being arranged only at a center of a top surface of each of the source and drain electrodes.
10. The method of claim 1 , wherein the at least one opening comprises an opening being arranged at a portion of a top surface of the drain electrode closest to the source electrode and a portion of a top surface of the source electrode closest to the drain electrode.
11. The method of claim 1 , wherein the at least one opening comprises an opening being arranged on a sidewall surface of the drain electrode that faces the source electrode and on a sidewall surface of the source electrode that faces the drain electrode.
12. The method of claim 1 , wherein the at least one opening comprises an opening being arranged over an entirety of the top and side surfaces of each of the source and drain electrodes.