IP Library Granted Patent US 8,289,791
Granted Patent B2
US 8,289,791 · App. 12/662,270 · Granted Oct 16, 2012

Test method and device for memory device

Assignee: Samsung Electronics Co., Ltd.
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Quick Facts
Patent No.
US 8,289,791
App. No.
12/662,270
Granted
Oct 16, 2012
Kind
B2
Abstract

Provided is a test method for a memory device including a plurality of storage regions and an SPO recovery unit. The test method stores data in the plurality of storage regions. The test method shuts off supply of power to the memory device and resupplies the power to the memory device. The test method determines an operational state of the SPO recovery unit after the resupplying step based on the stored data.

Claims (29)

1. A test method for a memory device including a plurality of storage regions and a Sudden Power Off (SPO) recovery unit, the test method comprising:

storing data in the plurality of storage regions;

shutting off supply of power to the memory device;

resupplying the power to the memory device; and

determining an operational state of the SPO recovery unit after the resupplying step based on the stored data.

2. The test method of claim 1 , wherein the storing data step comprises:

sequentially storing a first data in a first and a second storage region of the plurality of storage regions; and

sequentially overwriting the first data with a second data in the first and the second storage regions of the plurality of storage regions.

3. The test method of claim 2 , wherein the second data is greater than the first data.

4. The test method of claim 3 , wherein the determining step determines the operational state of the SPO recovery unit is unsuccessful, if data stored in the second storage region is greater than data stored in the first Storage region.

5. The test method of claim 3 , wherein the determining step determines the operational state of the SPO recovery unit is successful, if data stored in the second storage region is less than data stored in the first storage region.

6. The test method of claim 2 , wherein the second data is less than the first data.

7. The test method of claim 6 , wherein the determining step determines the operational state of the SPO recovery unit is unsuccessful, if data stored in the second storage region is less than data stored in the first storage region.

8. The test method of claim 6 , wherein the determining step determines the operational state of the SPO recovery unit is successful, if data stored in the second storage region is less than data stored in the first storage region.

9. A test device for a memory device including a plurality of storage regions and a Sudden Power Off (SPO) recovery unit, the test device comprising:

a data generator configured to generate data;

a switch configured to selectively supply power to the memory device;

a processor configured to store data in the plurality of storage regions, to control the switch to shut off supply of power to the memory device and to resupply the power to the memory device, and the processor configured to determine an operational state of the SPO recovery unit after the resupply of power based on the stored data.

10. The test device of claim 9 , wherein the data generator is configured to generate a first data and a second data, wherein the first data is sequentially stored in a first and a second storage region of the plurality of storage regions, and the second data sequentially overwrites the first data in the first and the second storage regions.

11. The test device of claim 10 , wherein the second data is greater than the first data.

12. The test device of claim 11 , wherein the processor is configured to determine the operational state of the SPO recovery unit is unsuccessful, if data stored in the second storage region is greater than data stored in the first storage region.

13. The test device of claim 11 , wherein the processor is configured to determine the operational state of the SPO recovery unit is successful, if data stored in the first storage region is less than data stored in the second storage region.

14. The test device of claim 10 , wherein the second data is less than the first data.

15. The test device of claim 14 , wherein the processor is configured to determine the operational state of the SPO recovery unit is unsuccessful, if data stored in the second storage region is less than data stored in the first storage region.

16. The test device of claim 14 , wherein the processor is configured to determine the operational state of the SPO recovery unit is successful, if data stored in the first storage region is greater than data stored in the second storage region.

17. A test method for a memory device including a plurality of storage regions and a data recovery unit, the test method comprising:

determining an operating state of the data recovery unit after a sudden power off of power supplied to the memory device based on data stored in the plurality of storage regions.

18. The test method of claim 17 , wherein the determining step determines the operating state of the data recovery unit based on the data stored in the higher storage regions being greater than data stored in lower regions.

19. The test method of claim 17 , wherein the determining step determines the operating state of the data recovery unit based on data stored in the higher storage regions being less than data stored in lower regions.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 8, 2010
From: MOON, SEONGHWAN; BYUN, CHUL-HOON
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 024242/0523 →
Priority Claims (1)
KR 10-2009-0072531 · Aug 6, 2009 · national
Continuity (1)
Related Publication 20110032782A1 · Feb 10, 2011