Gate drive device
View Patent ↗A gate drive device which can suppress the fluctuation of an internal power source voltage and output voltage, while reducing the number of parts by omitting a bypass capacitor connected in parallel with a semiconductor integrated circuit, is provided. The gate drive device drives the gate of an active element with a large input capacity, such as an IGBT or MOSFET, and includes a semiconductor integrated circuit. The semiconductor integrated circuit has an internal power source based on an external power source, such as a battery. The semiconductor integrated circuit incorporates a voltage drop suppressing circuit, configured so that, if an input external power source voltage momentarily drops below a minimum operating voltage, a drop of an internal power source voltage below the minimum operating voltage, and a sharp drop in a voltage output to the gate, are prevented by the voltage drop suppressing circuit.
1. A gate drive device, comprising:
a semiconductor integrated circuit, connected to an internal power source circuit supplied by an external power source; and
a voltage drop suppressing circuit configured to, if an external power source voltage corresponding to the external power source drops below a minimum operating voltage, prevent a drop of an internal power source voltage corresponding to the internal power source circuit below the minimum operating voltage, the voltage drop suppressing circuit including an undervoltage detection circuit configured to detect a fluctuating condition in the internal power source voltage, and a switching element coupled to the detection circuit;
wherein the undervoltage detection circuit is configured to, in response to detecting the fluctuating condition, control the switching element to inhibit a capacity discharge at a point connected to an output terminal of the semiconductor integrated circuit.
2. The gate drive device of claim 1 , wherein the voltage drop suppressing circuit is further configured to prevent a drop of at least a predetermined magnitude in a voltage output to a gate of the gate drive device.
3. The gate drive device according to claim 1 , wherein the voltage drop suppressing circuit is further configured to maintain the internal power source voltage at or above the minimum operating voltage for a time longer than a voltage drop time during which the external power source voltage drops below the minimum operating voltage.
4. The gate drive device according to claim 2 ,
wherein the undervoltage detection circuit is further configured to detect a voltage drop in at least one of the internal power source voltage or the external power source voltage; and
wherein the switching element is configured to, if a drop in the at least one of the internal power source voltage or the external power source voltage is detected by the detection circuit, suppress at least one of the drop in the voltage output to the gate or a drop in the internal power source voltage.
5. The gate drive device according to claim 3 , wherein the voltage drop suppressing circuit is further configured to prevent a drop of at least a predetermined magnitude in a voltage output to a gate of the gate drive device, and wherein:
the undervoltage detection circuit is further configured to detect a voltage drop in at least one of the internal power source voltage or the external power source voltage; and
the switching element is configured to, if a drop in the at least one of the internal power source voltage or the external power source voltage is detected by the detection circuit, suppress at least one of the drop in the voltage output to the gate or a drop in the internal power source voltage.
6. The gate drive device according to claim 4 , wherein:
the switching element includes an N-type MOSFET; and
a control voltage configured to be applied to a gate of the N-type MOSFET has a fall time sufficiently short, in comparison with a drop time during which at least the external power source voltage drops below the minimum operating voltage, to allow the switching element to assume a condition to suppress the drop in the voltage output to the gate, and
a rise time sufficiently long in comparison with the drop time to allow the switching element to assume the condition to suppress the drop in the voltage output to the gate.
7. The gate drive device according to claim 5 , wherein:
the switching element includes an N-type MOSFET; and
a control voltage configured to be applied to a gate of the N-type MOSFET has
a fall time sufficiently short, in comparison with a drop time during which at least the external power source voltage drops below the minimum operating voltage, to allow the switching element to assume a condition to suppress the drop in the voltage output to the gate, and
a rise time sufficiently long in comparison with the drop time to allow the switching element to assume the condition to suppress the drop in the voltage output to the gate.
8. The gate drive device according to claim 4 , wherein the undervoltage detection circuit comprises a self-biasing circuit.
9. The gate drive device according to claim 5 , wherein the undervoltage detection circuit comprises a self-biasing circuit.
10. The gate drive device according to claim 6 , wherein the undervoltage detection circuit comprises a self-biasing circuit.
11. The gate drive device according to claim 7 , wherein the undervoltage detection circuit comprises a self-biasing circuit.
12. A gate drive device, comprising:
a semiconductor integrated circuit, connected to an internal power source circuit supplied by an external power source; and
a voltage drop suppressing circuit configured to, if an external power source voltage corresponding to the external power source drops below a minimum operating voltage, prevent a drop of an internal power source voltage corresponding to the internal power source circuit below the minimum operating voltage;
wherein the voltage drop suppressing circuit is further configured to prevent a drop of at least a predetermined magnitude in a voltage output to a gate of the gate drive device, and includes
an undervoltage detection circuit comprising a self-biasing circuit, configured to detect a voltage drop in at least one of the internal power source voltage or the external power source voltage, and
a switching element configured to, if a drop in the at least one of the internal power source voltage or the external power source voltage is detected by the undervoltage detection circuit, suppress at least one of the drop in the voltage output to the gate or a drop in the internal power source voltage; and
wherein the semiconductor integrated circuit includes
a first P-type MOSFET and a third P-type MOSFET connected in series, and
a first N-type MOSFET connected in parallel with the third P-type MOSFET,
wherein the first P-type MOSFET forms a pull-up switch, the third P-type MOSFET forms a source follower, and a connection point of the first P-type MOSFET and first N-type MOSFET is connected to the gate,
a second P-type MOSFET forming a constant current source, connected between the first P-type MOSFET and an internal power source circuit, and
a second N-type MOSFET connected between the third P-type MOSFET and a ground, the second N-type MOSFET configured to in accordance with a control voltage of the undervoltage detection circuit.
13. A gate drive device, comprising:
a semiconductor integrated circuit, connected to an internal power source circuit supplied by an external power source; and
a voltage drop suppressing circuit configured to, if an external power source voltage corresponding to the external power source drops below a minimum operating voltage, prevent a drop of an internal power source voltage corresponding to the internal power source circuit below the minimum operating voltage;
wherein the voltage drop suppressing circuit is further configured to maintain the internal power source voltage at or above the minimum operating voltage for a time longer than a voltage drop time during which the external power source voltage drops below the minimum operating voltage, and to prevent a drop of at least a predetermined magnitude in a voltage output to a gate of the gate drive device, and further includes
an undervoltage detection circuit comprising a self-biasing circuit, and configured to detect a voltage drop in at least one of the internal power source voltage or the external power source voltage, and
a switching element configured to, if a drop in the at least one of the internal power source voltage or the external power source voltage is detected by the undervoltage detection circuit, suppress at least one of the drop in the voltage output to the gate or a drop in the internal power source voltage; and
wherein the semiconductor integrated circuit includes
a first P-type MOSFET and a third P-type MOSFET connected in series, and
a first N-type MOSFET connected in parallel with the third P-type MOSFET,
wherein the first P-type MOSFET forms a pull-up switch, the third P-type MOSFET forms a source follower, and a connection point of the first P-type MOSFET and first N-type MOSFET is connected to the gate,
a second P-type MOSFET forming a constant current source, connected between the first P-type MOSFET and an internal power source circuit, and
a second N-type MOSFET connected between the third P-type MOSFET and a ground, the second N-type MOSFET configured to in accordance with a control voltage of the undervoltage detection circuit.
14. The gate drive device according to claim 10 , wherein the semiconductor integrated circuit further includes:
a first P-type MOSFET and a third P-type MOSFET connected in series, and
a first N-type MOSFET connected in parallel with the third P-type MOSFET,
wherein
the first P-type MOSFET forms a pull-up switch,
the third P-type MOSFET forms a source follower, and
a connection point of the first P-type MOSFET and first N-type MOSFET is connected to the gate;
a second P-type MOSFET forming a constant current source, connected between the first P-type MOSFET and an internal power source circuit; and
a second N-type MOSFET connected between the third P-type MOSFET and a ground, the second N-type MOSFET configured to in accordance with a control voltage of the undervoltage detection circuit.
15. The gate drive device according to claim 11 , wherein the semiconductor integrated circuit further includes:
a first P-type MOSFET and a third P-type MOSFET connected in series, and
a first N-type MOSFET connected in parallel with the third P-type MOSFET,
wherein
the first P-type MOSFET forms a pull-up switch,
the third P-type MOSFET forms a source follower, and
a connection point of the first P-type MOSFET and first N-type MOSFET is connected to the gate;
a second P-type MOSFET forming a constant current source, connected between the first P-type MOSFET and an internal power source circuit; and
a second N-type MOSFET connected between the third P-type MOSFET and a ground, the second N-type MOSFET configured to in accordance with a control voltage of the undervoltage detection circuit.