Method for manufacturing quantum dot
View Patent ↗A silicon oxide film ( 2 ) comprising an amorphous phase is deposited on a substrate ( 1 ) (see a step (b)) by a plasma CVD method using an SiH 4 gas and an N 2 O gas. Subsequently, a sample comprising the silicon oxide film ( 2 )/the substrate ( 1 ) is set on an RTA apparatus. The sample (=the silicon oxide film ( 2 )/the substrate ( 1 )) is heat-treated (rapid heating and rapid cooling) (see a step (c)). In this case, a temperature raising rate is 200° C./s, and a temperature in heat treatment is 1000° C.
1. A method of manufacturing a quantum dot, comprising:
setting a ratio of a second material to a first material to a value of not less than a first reference value, and depositing an amorphous thin film on a substrate;
raising a temperature of the amorphous thin film deposited at the setting a ratio to a preset temperature at a temperature raising rate of not lower than 0.2° C./second; and
heat-treating the amorphous thin film at the preset temperature to form a heat-treated amorphous thin film;
wherein:
the preset temperature is a temperature for generating a crystal grain;
the first material includes a first element;
the second material includes a second element;
the first reference value is a ratio of the second material to the first material when a stoichiometric insulating film including the first and second elements is formed;
a second reference value is a ratio of the second material to a third material including a third element when a stoichiometric insulating film including the third element and the second element is formed; and
at the setting a ratio, the ratio of the second material to the first material is set to a value of not less than the first reference value; and the ratio of the second material to the third material is set to a value of not less than the second reference value to deposit the amorphous thin film on the substrate;
the first element is oxygen;
the second element is any of silicon and germanium; and
the third element is nitrogen.
2. The method of manufacturing a quantum dot according to claim 1 , further comprising cooling the heat-treated amorphous thin film at a temperature falling rate of not lower than 5° C./second.
3. The method of manufacturing a quantum dot according to claim 1 , further comprising cooling the heat-treated amorphous thin film at a temperature falling rate lower than 5° C./second.
4. The method of manufacturing a quantum dot according to claim 1 , wherein the temperature raising rate is in a range of 0.2° C./s to 500° C./s.
5. The method of manufacturing a quantum dot according to claim 1 , wherein the temperature falling rate is in a range of 5° C./s to 50° C./s.