IP Library Granted Patent US 8,335,407
Granted Patent B2
US 8,335,407 · App. 12/665,635 · Granted Dec 18, 2012

Method for manufacturing optical nonreciprocal element

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,335,407
App. No.
12/665,635
Granted
Dec 18, 2012
Kind
B2
Abstract

A novel technique is provided, which can secure sufficient adhesion of an Si layer and a magneto-optical material layer while avoiding occurrence of cracks when fabricating an optical nonreciprocal element by bonding the Si layer on which a rib waveguide is formed, and the magneto-optical material layer. The method includes forming a waveguide on the Si layer of an SOI substrate which is a first substrate, forming a first thin-film buffer layer on the aforesaid waveguide, forming a second thin-film buffer layer on an magneto-optical material layer deposited on a second substrate by using a same material as that of the aforesaid first thin-film buffer layer, and bonding the aforesaid first thin-film buffer layer and the aforesaid second thin-film buffer layer in placement where a light propagating in the aforesaid waveguide can be caused to generate nonreciprocal phase change by the aforesaid magneto-optical material layer.

Claims (28)

1. A method for forming an optical nonreciprocal element, the method comprising:

forming a first thin-film buffer layer on a silicon (Si) layer of a silicon-on-insulator (SOI) substrate;

etching the first thin-film buffer layer and the Si layer to form a waveguide;

forming a second thin-film buffer layer on a magneto-optical material layer deposited on a second substrate using a same material as that of the first thin-film buffer layer; and

bonding the first thin-film buffer layer and the second thin-film buffer layer in a placement such that a light propagating in the waveguide can be caused to generate a nonreciprocal phase change by the magneto-optical material layer.

2. A method for manufacturing an optical nonreciprocal element, the method comprising:

forming a first thin-film buffer layer on a silicon (Si) layer of a silicon-on-insulator (SOI) substrate;

processing the Si layer and the first thin-film buffer layer to form an Si waveguide, wherein the first thin-film buffer layer is stacked on an upper portion of the Si waveguide;

forming a second thin-film buffer layer on a magneto-optical material layer deposited on a second substrate using a same material as that of the first thin-film butler layer; and

bonding the first thin-film buffer layer stacked on the upper portion of the Si waveguide, and the second thin-film buffer layer in a placement such that a light propagating in the waveguide can be caused to generate a nonreciprocal phase change by the magneto-optical material layer.

3. The method for manufacturing an optical nonreciprocal element according to claim 1 , wherein the material forming the first thin-film buffer layer and the second thin-film buffer layer comprises a material having a refraction index which is 2.8 or higher, and lower than a refraction index of an Si waveguide layer.

4. The method for manufacturing an optical nonreciprocal element according to claim 1 , further comprising magnetizing the magneto-optical material layer in a vertical direction with respect to a propagating direction of the light in the waveguide.

5. The method for manufacturing an optical nonreciprocal element according to claim 1 , wherein the forming the first thin-film buffer layer, and the forming the second thin-film buffer layer are carried out so that a total of a thickness of the first thin-film buffer layer and a thickness of the second thin-film buffer layer is about 20 nanometers or less.

6. The method for manufacturing an optical nonreciprocal element according to claim 1 , wherein the forming the second thin-film buffer layer comprises forming the second thin-film buffer layer on a magnetic garnet layer deposited on the second substrate.

7. The method for manufacturing an optical nonreciprocal element according to claim 1 , wherein the magneto-optical material layer includes a first portion and a second portion, wherein the first portion is magnetized in a first direction, and wherein the second portion is magnetized in a second direction opposite the first direction.

8. The method for manufacturing an optical nonreciprocal element according to claim 1 , wherein the magneto-optical material layer is formed along the entire waveguide.

9. The method for manufacturing an optical nonreciprocal element according to claim 1 , further comprising forming a magnetic field applying unit in relation to the magneto-optical material layer, wherein the magnetic field applying unit is configured to apply a magnetic field to align a direction of magnetization of the magneto-optical material layer.

10. The method for manufacturing an optical nonreciprocal element according to claim 1 , wherein the magneto-optical material layer comprises a magnetic garnet material.

11. The method for manufacturing an optical nonreciprocal element according to claim 1 , further comprising depositing the magneto-optical material layer on the second substrate by crystal growth.

12. The method for manufacturing an optical nonreciprocal element according to claim 2 , wherein the material forming the first thin-film buffer layer and the second thin-film buffer layer comprises a material having a refraction index of 2.8 or higher, and lower than a refraction index of an Si waveguide layer.

13. The method for manufacturing an optical nonreciprocal element according to claim 2 , further comprising magnetizing the magneto-optical material layer in a vertical direction with respect to a propagating direction of the light in the waveguide.

14. The method for manufacturing an optical nonreciprocal element according to claim 2 , wherein the forming the first thin-film buffer layer, and the forming the second thin-film buffer layer are carried out so that a total of a thickness of the first thin-film buffer layer and a thickness of the second thin-film buffer layer is about 20 nanometers or less.

15. The method for manufacturing an optical nonreciprocal element according to claim 2 , wherein the forming the second thin-film buffer layer comprises forming the second thin-film buffer layer on a magnetic garnet layer deposited on the second substrate.

16. The method for manufacturing an optical nonreciprocal element according to claim 2 , wherein the magneto-optical material layer includes a first portion and a second portion, wherein the first portion is magnetized in a first direction, and wherein the second portion is magnetized in a second direction opposite the first direction.

17. The method for manufacturing an optical nonreciprocal element according to claim 2 , wherein the magneto-optical material layer is formed along the entire Si waveguide.

18. The method for manufacturing an optical nonreciprocal element according to claim 2 , further comprising forming a magnetic field applying unit in relation to the magneto-optical material layer, wherein the magnetic field applying unit is configured to apply a magnetic field to align a direction of magnetization of the magneto-optical material layer.

19. The method for manufacturing an optical nonreciprocal element according to claim 2 , wherein the magneto-optical material layer comprises a magnetic garnet material.

20. The method for manufacturing an optical nonreciprocal element according to claim 2 , further comprising depositing the magneto-optical material layer on the second substrate by crystal growth.

Assignments (4)
RELEASE OF SECURITY INTEREST IN PATENTS, RECORDED ON JANUARY 29, 2019 AT REEL 048373 FRAME 0217 Recorded Sep 22, 2025
From: CRESTLINE DIRECT FINANCE, L.P., AS COLLATERAL AGENT
To: EMPIRE TECHNOLOGY DEVELOPMENT LLC
Reel/Frame 072936/0464 →
RELEASE OF SECURITY INTEREST Recorded Jul 31, 2019
From: CRESTLINE DIRECT FINANCE, L.P.
To: EMPIRE TECHNOLOGY DEVELOPMENT LLC
Reel/Frame 049924/0794 →
SECURITY INTEREST Recorded Jan 29, 2019
From: EMPIRE TECHNOLOGY DEVELOPMENT LLC
To: CRESTLINE DIRECT FINANCE, L.P.
Reel/Frame 048373/0217 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 30, 2010
From: YOKOI, HIDEKI
To: SHIBAURA INSTITUTE OF TECHNOLOGY
Reel/Frame 024945/0571 →