Use of a metal complex as a p-dopant for an organic semiconductive matrix material, organic semiconductor material and organic light-emitting diodes
View Patent ↗A metal complex is used as p-dopant for an organic semiconducting matrix material, to an organic semiconductor material and to an organic light-emitting diode. Also disclosed is the use of metal complexes, which function as Lewis acids, as p-dopants in organic matrix materials.
1. A method for doping said hole-conducting organic matrix material of a radiation-emitting device a hole-conducting organic matrix material of a radiation-emitting device, comprising the steps of doping with a metal complex as p-dopant, wherein the metal complex is a metal complex with Lewis acid properties and acts as an electron pair acceptor, wherein the metal complex comprises at least one ligand selected from carboxylic acids or carboxylic anions with electron-attracting substituents.
2. The method according to claim 1 , wherein the metal complex is a polynuclear metal complex.
3. The method according to claim 1 , wherein a central atom of the metal complex is a neutral or charged transition metal atom.
4. The method according to claim 1 , wherein at least one central atom is selected from the subgroups 6 to 9.
5. The method according to the preceding claim 4 , wherein said at least one central atom is rhodium.
6. The method according to claim 1 , wherein the metal complex is a polynuclear metal complex, in which at least one ligand coordinatively links two central atoms.
7. The method according to claim 1 , wherein at least one central atom is planar-quadratically surrounded by ligands.
8. The method according to claim 1 , wherein the metal complex is of a polynuclear and symmetrical structure.
9. The method according to claim 1 , wherein at least one metal complex has a paddle-wheel structure.
10. An organic semiconducting material in a radiation emitting device, containing at least one organic matrix material and a p-dopant according to claim 1 .
11. The organic semiconducting material according to claim 10 , wherein the molar doping ratio of p-dopant to monomeric units of a polymeric matrix molecule amounts to between 1:1 and 1:100,000.
12. A method of producing an organic semiconducting material containing an organic matrix material in a radiation-emitting device, and a p-dopant, wherein at least one or more metal complexes according to claim 1 are the p-dopant.
13. A radiation-emitting device containing an organic semiconducting material according to claim 10 .
14. The radiation-emitting device according to claim 13 , wherein the radiation-emitting device is an organic light-emitting diode, which comprises two electrodes, a hole-conducting layer and an emitting layer, wherein the hole-conducting layer contains one or more metal complexes with Lewis acid properties.
15. The method according to claim 4 , wherein at least one central atom is ruthenium.
16. The method according to claim 1 , wherein the electron-attracting substituents are halogen atoms.