Optoelectronic semiconductor chip

1. An optoelectronic semiconductor chip comprising:

a radiation passage area;

a contact metallization applied to the radiation passage area; and

a first reflective layer sequence applied to that surface of the contact metallization which is remote from the radiation passage area; and

at least one current spreading track applied to the radiation passage area and electrically conductively connected to the contact metallization, the at least one current spreading track including a current spreading metallization and a second reflective layer sequence applied to that surface of the current spreading metallization which is remote from the radiation passage area;

wherein the reflective layer sequence is provided for reflecting electromagnetic radiation reflected back to the contact metallization; and

wherein the second reflective layer sequence is provided for reflecting electromagnetic radiation reflected back to the current spreading metallization.

2. The optoelectronic semiconductor chip as claimed in claim 1 , wherein the first reflective layer sequence comprises at least one layer which contains a metal.

3. The optoelectronic semiconductor chip as claimed in claim 2 , wherein the first reflective layer sequence comprises at least one layer which contains at least one of the following metals: aluminum, silver.

4. The optoelectronic semiconductor chip as claimed in claim 1 , wherein the first reflective layer sequence comprises at least one layer which contains a dielectric material.

5. The optoelectronic semiconductor chip as claimed in claim 4 , wherein the first reflective layer sequence forms a Bragg mirror.

6. The optoelectronic semiconductor chip as claimed in claim 1 , wherein the second reflective layer sequence comprises at least one layer which contains a metal comprising at least one of aluminum and silver.

7. The optoelectronic semiconductor chip as claimed in claim 1 , wherein the second reflective layer sequence comprises at least one layer which contains a dielectric material.

8. The optoelectronic semiconductor chip as claimed in claim 7 , wherein the second reflective layer sequence forms a Bragg mirror.

9. An optoelectronic semiconductor component comprising:

a radiation passage area;

a contact metallization applied to the radiation passage area;

a first reflective layer sequence applied to that surface of the contact metallization which is remote from the radiation passage area; and

an optical filter element comprising a luminescence conversion material disposed downstream of the optoelectronic semiconductor chip in an emission direction, said optical filter element being configured to transmit a first radiation component having a first radiation property and to reflect a second radiation component having a second radiation property, which differs from the first radiation property.

10. The optoelectronic semiconductor component as claimed in claim 9 , wherein the optical filter element comprises a dichroic filter.

11. The optoelectronic semiconductor component as claimed in claim 9 , wherein the optical filter element comprises a polarization filter.

12. The optoelectronic semiconductor component as claimed in claim 9 , wherein the optical filter element comprises an angle filter.

13. The optoelectronic semiconductor component as claimed in claim 9 , wherein at least one current spreading track is applied to the radiation passage area of the optoelectronic semiconductor chip, wherein the current spreading track is electrically conductively connected to the contact metallization.

14. The optoelectronic semiconductor chip as claimed in claim 13 , wherein the current spreading track has a current spreading metallization and also a second reflective layer sequence applied to that surface of the current spreading metallization which is remote from the radiation passage area, wherein the second reflective layer sequence is provided for reflecting of electromagnetic radiation reflected back to the current spreading metallization.