Ultrasonic probe and ultrasonic diagnostic apparatus
View Patent ↗Provided are an ultrasonic probe and an ultrasonic diagnostic apparatus, which reduce parastic impedances which occurs in upper electrodes and lower electrodes, thereby reducing cross talk. The ultrasonic probe comprises a cMUT chip ( 20 ) having a plurality of transducer elements, an acoustic lens ( 26 ) on the ultrasonic wave irradiation side of the cMUT chip ( 20 ), a backing layer ( 22 ) on the back of the cMUT chip ( 20 ), and wires connected with the cMUT chip ( 20 ). This cMUT chip ( 20 ) includes a plurality of upper electrodes ( 46 ) and a plurality of lower electrodes ( 48 ), and these lower electrodes ( 48 ) are connected at two or more portions with wires.
1. An ultrasonic diagnostic apparatus comprising:
an ultrasonic probe configured to transmit/receive ultrasonic waves with a plurality of transducers to/from an object to be examined;
a transmission unit configured to provide a drive signal to the plurality of transducers;
a bias unit configured to supply a bias voltage to the plurality of transducers;
a reception unit configured to convert the received ultrasonic waves from the object into received reflected echo signals;
a computer having at least one processor pre-configured to operate as:
a phasing adding unit configured to perform a phasing and adding process on the received reflected echo signals;
an image processing unit configured to construct an ultrasonic image based on outputted signals from the phasing adding unit; and
a display unit configured to display the ultrasonic image from the image processing unit;
an operation unit including input hardware, configured to receive commands to the computer, via input by an operator,
wherein the ultrasonic probe is a capacitive micromachined ultrasonic transducer (cMUT) chip,
the cMUT chip including: a plurality of upper electrodes, a plurality of lower electrodes, and a wiring arrangement connected to supply the bias voltage from the bias unit to the plurality of upper electrodes and the plurality of lower electrodes, and
the wiring arrangement is connected at two or more places of at least one upper electrode of the plurality of upper electrodes and at two or more places of at least one lower electrode of the plurality of lower electrodes, so as to apply the bias voltage to reduce cross talk by reducing parasitic impedance generated by the plurality of upper electrodes or the plurality of lower electrodes.
2. The ultrasonic diagnostic apparatus according to claim 1 ,
wherein both ends of the at least one lower electrode are respectively connected to the wiring arrangement.
3. The ultrasonic diagnostic apparatus according to claim 2 ,
wherein the both ends of the lower electrode are portions protruded from disposal positions of transducer elements provided on the lower electrode.
4. The ultrasonic diagnostic apparatus according to claim 3 ,
wherein width of each protruded portion of the portions protruded, is in a range from 200 micrometer to 1.5 millimeter.
5. The ultrasonic diagnostic apparatus according to claim 1 ,
wherein respective wirings of the wiring arrangement, which are connected to the two or more places of the at least one lower electrode, have equipotential applied thereto by the bias voltage.
6. The ultrasonic diagnostic apparatus according to claim 1 ,
wherein a cross-section area which is orthogonal to a long-axis direction of the at least one lower electrode, is set so that a spacing between the at least one upper electrode and the at least one lower electrode is greater than a predetermined interval.
7. The ultrasonic diagnostic apparatus according to claim 6 ,
wherein the spacing between the at least one upper electrode and the at least one lower electrode, is greater than 250 nm.
8. The ultrasonic diagnostic apparatus according to claim 1 ,
wherein ends of the plurality of upper electrodes are respectively connected to the wiring arrangement, in opposing directions for adjacent upper electrodes.
9. An ultrasonic probe comprising:
a capacitive micromachined ultrasonic transducer (cMUT) chip;
wherein the cMUT chip including a plurality of upper electrodes, a plurality of lower electrodes, and a wiring arrangement connected to supply a bias voltage to the plurality of upper electrodes and the plurality of lower electrodes and
the wiring arrangement is connected at two or more places of at least one upper electrode of the plurality of upper electrodes and at two or more places of at least one lower electrode of the plurality of lower electrodes, so as to apply the bias voltage to reduce cross talk by reducing parasitic impedance generated by the plurality of upper electrodes or the plurality of lower electrodes.