Method for manufacturing organic thin film transistor and organic thin film transistor
View Patent ↗A method for manufacturing an organic thin film transistor having excellent characteristics by a simple process, and an organic thin film transistor are provided. In a manufacture method of an organic thin film transistor element having a gate electrode, a gate insulation layer, an organic semiconductor layer and a source electrode and a drain electrode on a support, the method is characterized by comprising a step for forming an organic semiconductor precursor layer by applying a solution in which an organic semiconductor precursor is dissolved, and a step for forming an organic semiconductor layer by converting the organic semiconductor precursor to an organic semiconductor by exposing the organic semiconductor precursor layer to a discharging gas in a plasma state.
1. A method for manufacturing an organic thin film transistor comprising a gate electrode, a gate insulation layer, an organic semiconductor layer, a source electrode and a drain electrode on a support, the method comprising:
a step for forming an organic semiconductor precursor layer by applying a solution in which an organic semiconductor precursor is dissolved, and
a step for forming an organic semiconductor layer by converting the organic semiconductor precursor to an organic semiconductor by exposing the organic semiconductor precursor layer to discharging gas in a plasma state.
2. The method for manufacturing an organic thin film transistor of claim 1 , wherein the step for forming an organic semiconductor layer is conducted by exposing the organic semiconductor precursor layer to discharging gas in a plasma state blown from a plasma discharge apparatus of a jet method.
3. The method for manufacturing an organic thin film transistor of claim 1 , wherein the step for forming the organic semiconductor layer is conducted at atmospheric pressure or a pressure of a neighborhood of atmospheric pressure.
4. The method for manufacturing an organic thin film transistor of claim 3 , wherein the pressure is 20 kPa to 110 kPa.
5. The method for manufacturing an organic thin film transistor of claim 1 , wherein the discharging gas is N 2 gas containing O 2 and H 2 in concentration of not more than 100 ppm.
6. The method for manufacturing an organic thin film transistor of claim 1 , wherein the organic semiconductor precursor is a porphyrin compound or a polyacene compound.
7. The method for manufacturing an organic thin film transistor of claim 1 , the method comprising, after the step for forming the organic semiconductor layer:
a step for forming an inorganic layer on the organic semiconductor layer by exposing the organic semiconductor layer to gas mixture of discharging gas, reactive gas and inorganic layer material gas in a plasma state blown from discharge apparatus.
8. The method for manufacturing an organic thin film transistor of claim 7 , wherein the step for forming the inorganic layer is conducted at atmospheric pressure or a pressure of a neighborhood of atmospheric pressure.
9. The method for manufacturing an organic thin film transistor of claim 8 , wherein the pressure is 20 kPa to 110 kPa.