Method for manufacturing nonvolatile storage element and method for manufacturing nonvolatile storage device

1. A manufacturing method of a nonvolatile storage element which includes a connecting electrode layer which is conductive, a lower electrode layer which is made of a non-noble metal nitride and is conductive, an upper electrode layer which is formed above the lower electrode layer and is made of a noble metal, and a variable resistance layer disposed between the lower electrode layer and the upper electrode layer and whose resistance value varies reversibly based on an electrical signal applied between the lower electrode layer and the upper electrode layer,

wherein the variable resistance layer includes electron holes and oxygen which move upon application of a charge in etching plasma,

said method comprising:

depositing, in sequence, the connecting electrode layer, the lower electrode layer, the variable resistance layer, the upper electrode layer, and a mask layer;

forming the mask layer into a predetermined shape, using a photoresist film as a mask;

performing three-layer etching on the upper electrode layer, the variable resistance layer, and the lower electrode layer, using the mask layer that has been formed into the predetermined shape as a mask, to form the upper electrode layer, the variable resistance layer, and the lower electrode layer into the predetermined shape, so as to expose a region of the connecting electrode layer, the etching being performed with a higher etching rate for the non-noble metal nitride than an etching rate for the noble metal of the upper electrode layer; and

removing, simultaneously, the mask layer and the region of the connecting electrode layer exposed in said performing of the three-layer etching.

2. The manufacturing method according to claim 1 ,

wherein, in said performing of the three-layer etching, the upper electrode layer, the variable resistance layer, and the lower electrode layer are formed into the predetermined shape in a single etching process using the mask layer as a mask.

3. The manufacturing method according to claim 1 ,

wherein an etching rate of the mask layer in said performing of the three-layer etching is lower than at least an etching rate of the photoresist film in said performing of the three-layer etching.

4. The manufacturing method according to claim 1 ,

wherein the upper electrode layer is made of Pt or Ir, the lower electrode layer is made of TaN, and the connecting electrode layer is made of TiAlN.

5. The manufacturing method according to claim 1 ,

wherein said connecting electrode layer has a same etching rate as said mask layer.

6. The manufacturing method according to claim 1 ,

wherein said connecting electrode layer is made of a same material as said mask layer.

7. A manufacturing method of a nonvolatile storage element which includes a connecting electrode layer which is conductive, an upper electrode layer which is formed above the connecting electrode layer and is made of a noble metal, and a variable resistance layer disposed between the connecting electrode layer and the upper electrode layer and whose resistance value varies reversibly based on an electrical signal applied between the connecting electrode layer and the upper electrode layer,

wherein the variable resistance layer includes electron holes and oxygen which move upon application of a charge in etching plasma,

said method comprising:

depositing, in sequence, the connecting electrode layer, the variable resistance layer, the upper electrode layer, and a mask layer;

forming the mask layer into a predetermined shape, using a photoresist film as a mask;

performing two-layer etching on the upper electrode layer and the variable resistance layer, using the mask layer that has been formed into the predetermined shape as a mask, to form the upper electrode layer and the variable resistance layer into the predetermined shape, so as to expose a region of the connecting electrode layer; and

removing, simultaneously, the mask layer and the region of the connecting electrode layer exposed in said performing of the two-layer etching.

8. The manufacturing method according to claim 7 ,

wherein, in said performing of the two-layer etching, the upper electrode layer and the variable resistance layer are formed into the predetermined shape in a single etching process using the mask layer as a mask.

9. The manufacturing method according to claim 7 ,

wherein an etching rate of the mask layer in said performing of the two-layer etching is lower than at least an etching rate of the photoresist film in said performing of the two-layer etching.

10. The manufacturing method according to claim 7 ,

wherein the upper electrode layer is made of Pt or Ir, and the connecting electrode layer is made of TiAlN.

11. The manufacturing method according to claim 7 ,

wherein the connecting electrode layer has a same etching rate as the mask layer.

12. The manufacturing method according to claim 7 ,

wherein the connecting electrode layer is made of a same material as the mask layer.

13. A manufacturing method of a nonvolatile storage device which includes a semiconductor substrate, word lines and bit lines which are formed on the semiconductor substrate and arranged so as to intersect with each other, transistors each provided for a corresponding one of intersections of the word lines and the bit lines, and nonvolatile storage elements each provided for a corresponding one of the transistors, each of the nonvolatile storage elements including a connecting electrode layer which is conductive, a lower electrode layer which is made of a non-noble metal nitride and is conductive, an upper electrode layer which is formed above the lower electrode layer and is made of a noble metal, and a variable resistance layer disposed between the lower electrode layer and the upper electrode layer and whose resistance value varies reversibly based on an electrical signal applied between the lower electrode layer and the upper electrode layer,

wherein the variable resistance layer includes electron holes and oxygen which move upon application of a charge in etching plasma,

said method comprising:

depositing, in sequence, the connecting electrode layer, the lower electrode layer, the variable resistance layer, the upper electrode layer, and a mask layer;

forming the mask layer into a predetermined shape, using a photoresist film as a mask;

performing three-layer etching on the upper electrode layer, the variable resistance layer, and the lower electrode layer, using the mask layer that has been formed into the predetermined shape as a mask, to form the upper electrode layer, the variable resistance layer, and the lower electrode layer into the predetermined shape, so as to expose a region of the connecting electrode layer, the etching being performed with a higher etching rate for the non-noble metal nitride than an etching rate for the noble metal of the upper electrode layer;

removing, simultaneously, the mask layer and the region of the connecting electrode layer exposed in said performing of the three-layer etching; and

forming, on the semiconductor substrate, the corresponding one of the transistors and a semiconductor integrated circuit which are electrically connected to the connecting electrode layer and the upper electrode layer.

14. The manufacturing method according to claim 13 ,

wherein, in said performing of the three-layer etching, the upper electrode layer, the variable resistance layer, and the lower electrode layer are formed into the predetermined shape in a single etching process using the mask layer as a mask.

15. A manufacturing method of a nonvolatile storage device which includes a semiconductor substrate, word lines and bit lines which are formed on the semiconductor substrate and arranged so as to intersect with each other, transistors each provided for a corresponding one of intersections of the word lines and the bit lines, and nonvolatile storage elements each provided for a corresponding one of the transistors, each of the nonvolatile storage elements including a connecting electrode layer which is conductive, an upper electrode layer which is formed above the connecting electrode layer and is made of a noble metal, and a variable resistance layer disposed between the connecting electrode layer and the upper electrode layer and whose resistance value varies reversibly based on an electrical signal applied between the connecting electrode layer and the upper electrode layer,

wherein the variable resistance layer includes electron holes and oxygen which move upon application of a charge in etching plasma,

said method comprising:

depositing, in sequence, the connecting electrode layer, the variable resistance layer, the upper electrode layer, and a mask layer;

forming the mask layer into a predetermined shape, using a photoresist film as a mask;

performing two-layer etching on the upper electrode layer and the variable resistance layer, using the mask layer that has been formed into the predetermined shape as a mask, to form the upper electrode layer and the variable resistance layer into the predetermined shape, so as to expose a region of the connecting electrode layer;

removing, simultaneously, the mask layer and the region of the connecting electrode layer exposed in said performing of the two-layer etching; and

forming, on the semiconductor substrate, the corresponding one of the transistors and a semiconductor integrated circuit which are electrically connected to the connecting electrode layer and the upper electrode layer.

16. he manufacturing method according to claim 15 ,

wherein, in said performing of the two-layer etching, the upper electrode layer and the variable resistance layer are formed into the predetermined shape in a single etching process using the mask layer as a mask.