IP Library Granted Patent US 8,299,458
Granted Patent B2
US 8,299,458 · App. 12/673,735 · Granted Oct 30, 2012

Organic electroluminescent device

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Quick Facts
Patent No.
US 8,299,458
App. No.
12/673,735
Granted
Oct 30, 2012
Kind
B2
Abstract

An organic EL device is provided with a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer and an electron injection layer between an anode and a cathode, wherein the hole injection layer is obtained by doping a hole transport material with an electron-accepting impurity, and the ionization potential Ip(HIL) of the material of the hole injection layer that composes the hole injection layer (also referred to as a hole injection material in the present description), the ionization potential Ip(HTL) of the hole transport material, and the ionization potential Ip(EML) of the material of the light-emitting layer (also referred to as a light-emitting layer material in the present description) respectively satisfy the relationship of Ip(EML)>Ip(HTL)≧Ip(HIL)≧Ip(EML)−0.4 eV.

Claims (9)

1. An organic EL device provided with at least a hole injection layer, a hole transport layer, a light-emitting layer and an electron transport layer between an anode and a cathode, wherein:

an ionization potential Ip(HIL) of material of the hole injection layer, an ionization potential Ip(HTL) of material of the hole transport layer, and an ionization potential Ip(EML) of material of the light-emitting layer respectively satisfy the relationship of Ip(EML)>Ip(HTL)≧Ip(HIL)≧Ip(EML)−0.4 eV, and

wherein an acceptor dopant is added to the hole injection layer, and an electron affinity X(A) of the acceptor dopant added to the hole injection layer is represented by: X(A)≧Ip(HIL)−0.3 eV.

2. The organic EL device according to claim 1 , wherein the material of the hole injection layer is the same as the material of the hole transport layer.

3. The organic EL device according to claim 1 , wherein an optical band gap Eg(HTL) of the hole transport layer relative to the optical band gap Eg(EML) of the light-emitting layer is represented by: Eg(HTL)>Eg(EML).

4. The organic EL device according to claim 1 , wherein the electron transport layer contains a phenanthroline compound.

5. The organic EL device according to claim 1 , wherein the electron transport layer contains 1,10-phenanthroline, having the molecular structure shown in formula (1), or a derivative thereof

6. The organic EL device according to claim 1 , wherein the electron transport layer contains a silole derivative having the molecular structure shown in formula (2):

(where, R 12 to R 15 are the same or different, and represent a hydrogen atom, halogen atom, aliphatic substituent or an aromatic substituent).

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 2, 2012
From: FUJI ELECTRIC CO., LTD.
To: SHARP KABUSHIKI KAISHA
Reel/Frame 028486/0959 →
MERGER AND CHANGE OF NAME Recorded Aug 26, 2011
From: FUJI ELECTRIC HOLDINGS CO., LTD.
To: FUJI ELECTRIC CO., LTD.
Reel/Frame 026891/0655 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 22, 2011
From: TERAO, YUTAKA; KANAI, NAOYUKI
To: FUJI ELECTRIC HOLDINGS CO., LTD.
Reel/Frame 025844/0332 →