Lighting emitting device package and method of fabricating the same including a plating layer at an outer circumference of the package body
Provided is a light emitting device package and a method of fabricating the same. The light emitting device package comprises a package body having a cavity, a seed layer on a surface of the package body, a conductive layer on the seed layer, a mirror layer on the conductive layer, and a light emitting device in the cavity.
1. A light emitting diode package comprising:
a package body having a cavity;
a seed layer on a surface of the package body;
a plating layer on the seed layer at an outer circumference of the package body;
a conductive layer on an inner peripheral surface of the cavity; and
a mirror layer on the conductive layer,
wherein an end portion of the conductive layer extends on a top of the package body and is formed with a projection on the plating layer.
2. The light emitting diode package as claimed in claim 1 , wherein the cavity has a circular shape or a polygonal shape.
3. The light emitting diode package as claimed in claim 1 , wherein the plating layer is formed on a top surface, a lateral surface and a part of a lower surface of the package body.
4. The light emitting diode package as claimed in claim 3 , wherein both ends of the conductive layer extend onto the plating layer formed on the top surface of the package body.
5. The light emitting diode package as claimed in claim 1 , wherein both ends of the conductive layer protrude of a jaw shape on a top surface of the package body.
6. The light emitting diode package as claimed in claim 3 , wherein the seed layer, the conductive layer and the plating layer, which are formed on a bottom surface of the cavity and the lower surface of the package body, are electrically open.
7. The light emitting diode package as claimed in claim 1 , wherein the seed layer is formed on the package body and includes at least one of a titanium layer and a copper layer.
8. The light emitting diode package as claimed in claim 1 , wherein the conductive layer is formed on the seed layer and comprises at least one selected from the group of a titanium layer, a copper layer, a nickel layer and a gold layer.
9. The light emitting diode package as claimed in claim 1 , wherein the mirror layer is formed on the conductive layer and comprises at least one selected from the group of titanium, silver, aluminum and an alloy thereof.
10. The light emitting diode package as claimed in claim 1 , wherein at least one of the seed layer and the conductive layer has at thickness of about 1000 Å to 7000 Å.
11. The light emitting diode package as claimed in claim 1 , wherein the mirror layer has at thickness of about 1000 Å to 4000 Å.
12. The light emitting diode package as claimed in claim 3 , wherein the plating layer is formed on the seed layer and comprises at least one selected from the group of a titanium layer, a copper layer, a nickel layer and a gold layer.
13. The light emitting diode package as claimed in claim 2 , wherein the plating layer has a thickness of about 1.5 μm to 2.0 μm.
14. The light emitting diode package as claimed in claim 1 , further comprising at least one light emitting diode chip mounted on the cavity,
wherein the light emitting diode chip is electrically connected to the mirror layer.
15. The light emitting diode package as claimed in claim 1 , wherein a mold member or a mold member including a phosphor is molded in the cavity.
16. The light emitting diode package as claimed in claim 1 , wherein the package body is formed of a silicon wafer.