IP Library Granted Patent US 8,253,155
Granted Patent B2
US 8,253,155 · App. 12/677,085 · Granted Aug 28, 2012

Radiation-emitting device

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Quick Facts
Patent No.
US 8,253,155
App. No.
12/677,085
Granted
Aug 28, 2012
Kind
B2
Abstract

A radiation-emitting device has a radiation-emitting component with a layer stack with an active region that is formed for the emission of electromagnetic radiation. A microstructure layer is mechanically coupled to the layer stack and has elevations that extend away from the layer stack. A protective layer has a planar side facing away from the microstructure layer and is arranged on a side of the microstructure layer facing away from the layer stack.

Claims (23)

1. A radiation-emitting device comprising:

a radiation-emitting component with a layer stack with an active region that is constructed for emission of electromagnetic radiation;

a microstructure layer, mechanically coupled to the layer stack, the microstructure layer having elevations extending away from the layer stack;

a protective layer having a planar side facing away from the microstructure layer, the protective layer arranged on a side of the microstructure layer facing away from the layer stack;

an intermediate layer between the microstructure layer and the protective layer; and

structure elements arranged on a side of the protective layer that faces the microstructure layer.

2. The radiation-emitting device according to claim 1 , wherein the intermediate layer is formed from a material that has an index of refraction that is less than or equal to an index of refraction of the microstructure layer.

3. The radiation-emitting device according to claim 1 , wherein the intermediate layer comprises a liquid selected from the group consisting of water, propanol and heptane.

4. The radiation-emitting device according to claim 1 claim 5 , wherein the protective layer contacts the elevations of the microstructure layer at least in part.

5. The radiation-emitting device according to claim 1 , wherein the protective layer comprises a rigid plate.

6. The radiation-emitting device according to claim 1 , wherein the protective layer has a thickness between 10 μm and 1000 μm.

7. The radiation-emitting device according to claim 1 , wherein the microstructure layer comprises a material having an index of refraction that has a value of up to about 1.75.

8. The radiation-emitting device according to claim 1 , wherein the microstructure layer comprises a material selected from the group consisting of polyimide, polycarbonate and polytetrafluoroethylene.

9. The radiation-emitting device according to claim 1 , wherein the elevations of the microstructure layer are formed as pyramids and/or as truncated pyramids and/or as cones and/or truncated cones and/or as spherical sections.

10. The radiation-emitting device according to claim 1 , wherein the intermediate layer is a vacuum layer.

11. The radiation-emitting device according to claim 1 , wherein the protective layer comprises a material that is transparent for the electromagnetic radiation emitted by the active region.

12. The radiation-emitting device according to claim 1 , wherein the emission of the electromagnetic radiation from the radiation-emitting device is oriented in a manner defined by the structural elements.

13. The radiation-emitting device according to claim 1 , further comprising recesses between the elevations of the microstructure layer, wherein the protective layer fills the recesses.

14. The radiation-emitting device according to claim 13 , wherein the protective layer is formed from a material having a first index of refraction, the radiation-emitting device further comprising a substrate or a thin-film encapsulation arranged between the layer stack and the microstructure layer, the substrate being formed from a material having a second index of refraction, the first index of refraction being less than or equal to the second index of refraction.

15. The radiation-emitting device according to claim 14 , wherein the microstructure layer comprises a material with a third index of refraction, a ratio of the third index of refraction to the first index of refraction is greater than or equal to 1.04.

16. The radiation-emitting device according to claim 14 , wherein the substrate is arranged between the layer stack and the microstructure layer.

17. The radiation-emitting device according to claim 14 , wherein the substrate comprises a material that is transparent for the electromagnetic radiation emitted by the active region.

18. The radiation-emitting device according to claim 17 , wherein the protective layer comprises a material that is transparent for the electromagnetic radiation emitted by the active region.

Assignments (3)
MERGER Recorded Feb 17, 2026
From: OSRAM OLED GMBH
To: AMS-OSRAM INTERNATIONAL GMBH
Reel/Frame 074881/0104 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 17, 2015
From: OSRAM OPTO SEMICONDUCTORS GMBH
To: OSRAM OLED GMBH
Reel/Frame 036591/0262 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 8, 2010
From: KRUMMACHER, BENJAMIN CLAUS; SCHINDLER, FLORIAN; KLEIN, MARKUS
To: OSRAM OPTO SEMICONDUCTORS GMBH
Reel/Frame 024046/0734 →