Radiation-emitting semiconductor chip
View Patent ↗The invention relates to a radiation-emitting semiconductor chip, comprising an active zone for generating radiation having a wavelength lambda and a structured region having irregularly arranged structure elements which contain a first material having a first refractive index n 1 and which are surrounded by a medium comprising a second material having a second refractive index n 2 . A method for producing a semiconductor chip of this type is furthermore specified.
1. A radiation-emitting semiconductor chip comprising:
an active zone for generating radiation having a wavelength λ; and
a structured region comprising irregularly arranged structure elements comprising a first material having a first refractive index n 1 , wherein the structure elements are surrounded by a medium comprising a second material having a second refractive index n 2 , wherein a thickness of an interlayer comprising the structure elements and the medium corresponds to a maximum height of the structure elements, and wherein an effective refractive index n eff of the interlayer equates to n 2 <n eff <n 1 and wherein a base area width of the respective structure elements is less than a height h of the respective structure elements.
2. The radiation-emitting semiconductor chip as claimed in claim 1 , wherein the structure elements each have a width b≦4 μm and a distance a≦4 μm from one another.
3. The radiation-emitting semiconductor chip as claimed in claim 1 , wherein the structure elements each have a width b≦λ and a distance a≦λ from one another.
4. The radiation-emitting semiconductor chip as claimed in claim 1 , wherein the effective refractive index n eff is set by a concentration of the first material relative to a concentration of the second material in the interlayer.
5. The radiation-emitting semiconductor chip as claimed in claim 1 , wherein the semiconductor chip is a stripe laser having a ridge and wherein the structured region is arranged at sidewalls of the ridge.
6. The radiation-emitting semiconductor chip as claimed in claim 5 wherein the structure elements are formed from a semiconductor layer of the semiconductor chip and the medium is a passivation layer or absorber layer covering the structure elements.
7. The radiation-emitting semiconductor chip as claimed in claim 1 , further comprising a dielectric mirror, wherein the structure elements are formed from a first layer of the dielectric minor and are surrounded by a second layer of the dielectric minor.
8. The radiation-emitting semiconductor chip as claimed in claim 1 , wherein the active zone comprises the structured region which forms a quantum well structure.
9. The radiation-emitting semiconductor chip as claimed in claim 1 , wherein a base area width g of the respective structure elements is greater than a height h of the respective structure elements.
10. The radiation-emitting semiconductor chip as claimed in claim 9 , wherein the semiconductor chip is a light-emitting diode, and wherein the structured region is a coupling-out layer of the light-emitting diode.
11. The radiation-emitting semiconductor chip as claimed in claim 9 , wherein the semiconductor chip is a stripe laser having a ridge, and wherein the structured region is arranged alongside the ridge for coupling out scattered light.