Deposition of active films
View Patent ↗A plasma reactor ( 1 ) for treating a substrate ( 40 ), comprises at least two electrodes ( 20, 30 ) arranged within the reactor ( 1 ) defining an internal process space ( 13 ) there between, whereas the two electrodes ( 20, 30 ) are located opposed to each other and parallel with respect to a first surface ( 20 a ) of the electrodes ( 20, 30 ). Further it comprises a gas inlet ( 11 ) and a gas outlet ( 12 ) for transporting gas in and out of the plasma reactor ( 1 ), a radiofrequency generator ( 21 ) connected to at least one of the electrodes ( 20, 30 ). At least one of the electrodes ( 20, 30 ) has a corrective layer having a non planar shape along a surface ( 20 a ) facing the internal process space ( 13 ) which has in a first cross section along a radius of the electrode ( 20 ) a profile comprising three consecutive and adjacent segments, namely a first, a second and a third segment, where the third segment is adjacent to an edge of the electrode ( 20 ) and whereas medium gradient in the first segment is less than a medium gradient in the second segment and a medium gradient in the second segment is larger than a medium gradient in the third segment. An electrode ( 20 ) shaped in the above described manner provides for uniform plasma intensity along the surface of the substrate ( 40 ) and therefore provides for a treating which is homogenous and features uniform thickness. This invention further allows a compact construction of the vacuum treatment apparatus ( 1 ).
1. A plasma reactor for treating a substrate, comprising:
a) two or more electrodes arranged within the reactor defining an internal process space there between, the electrodes ( 20 , 30 ) being located opposed to each other and parallel with respect to a first surface of the electrodes;
b) a gas inlet and a gas outlet for transporting gas in and out of the plasma reactor; and
c) a radiofrequency generator connected to at least one of the electrodes, the at least one of the electrodes comprising a corrective layer having a non-planar shape along a surface facing the internal process space,
wherein one or more of the electrodes comprises a corrective layer that has, in a first cross section along a radius of the electrode, a profile comprising a first segment, a second segment, and a third segment, the first, second, and third segments being consecutive and adjacent to each other,
wherein f) the third segment is adjacent to an edge of the one or more of the electrodes,
wherein g) a medium gradient in the first segment is less than a medium gradient in the second segment and a medium gradient in the second segment is greater than a medium gradient in the third segment, and
wherein (h) the medium gradient of the first segment is between 0.003 and 0.013, the medium gradient of the second segment is between 0.018 and 0.044, and the medium gradient of the third segment is between 0.002 and 0.006.
2. A plasma reactor according to claim 1 , wherein the first segment comprises a section in which the corrective layer is essentially flat.
3. A plasma reactor according to claim 2 , wherein the section comprises between ⅙ and ⅓ of a radius of the corrective layer.
4. A plasma reactor according to claim 2 , wherein the section comprises ¼ of a radius of the corrective layer.
5. A plasma reactor according to claim 1 , wherein the medium gradient of the first segment is 0.006, the medium gradient of the second segment is 0.032, and the medium gradient of the third segment is 0.004.
6. A plasma reactor according to claim 1 , wherein said layer comprises a solid dielectric layer, a gaseous dielectric layer, or a combination thereof.
7. A plasma reactor according to claim 6 , wherein the gaseous dielectric layer is in gaseous communication with the internal process space.
8. A plasma reactor according to claim 1 , wherein the one or more of the electrodes is circular or square or rectangular.
9. A plasma reactor according to claim 1 , wherein the electrodes are shaped equally.