Lead and cadmium free, low temperature fired X7R dielectric ceramic composition and method of making
View Patent ↗Multilayer ceramic chip capacitors (MLCC's) which satisfy X7R TCC requirements and which are compatible with silver-palladium internal electrodes. The MLCC's exhibit desirable dielectric properties—high capacitance, low dissipation factor, high insulation resistance, stable TCC—and excellent performance on highly accelerated life testing, and good resistance to dielectric breakdown. The dielectric layers include a lead-free and cadmium-free barium titanate base material doped with other metal oxides such oxides of zinc, boron, bismuth, barium, titanium, praseodymium, cerium, tungsten, neodymium, tungsten, tin, niobium, copper, and/or manganese in various combinations. The dielectric ceramic materials herein can be fired at less than 1150° C. with an inner electrode having 70 wt % or more Ag and 30 wt % or less Pd to form an MLCC.
1. A lead-free and cadmium-free ceramic dielectric composition for multilayer ceramic capacitor manufacturing comprising:
a. about 85 to about 99 wt % BaTiO 3 ,
b. about 0.05 to about 2.5 wt % ZnO,
c. about 0.01 to about 1.5 wt % B 2 O 3 ,
d. about 0.5 to about 4 wt % Bi 2 O 3 ,
e. about 0.05 to about 3 wt % WO 3 , and
f. about 0.01 to about 2 wt % MnO.
2. The dielectric composition of claim 1 further comprising one or more selected from the group consisting of:
a. BaO, provided the amount does not exceed 2.5 wt %,
b. TiO 2 , provided the amount does not exceed 1.5 wt %,
c. Pr 6 O 11 , provided the amount does not exceed 2 wt %,
d. CeO 2 , provided the amount does not exceed 2 wt %,
e. Nd 2 O 3 , provided the amount does not exceed 3 wt %,
f. SnO 2 , provided the amount does not exceed 2.5 wt %,
g. Nb 2 O 5 , provided the amount does not exceed 1.5 wt %, and
h. CuO, provided the amount does not exceed 1.5 wt %.
3. The dielectric composition of claim 1 wherein the composition comprises:
a. about 90 to about 98 wt % BaTiO 3 ,
b. about 0.1 to about 1.5 wt % ZnO,
c. about 0.01 to about 1 wt % B 2 O 3 ,
d. about 1 to about 3 wt % Bi 2 O 3 ,
e. about 0.1 to about 2 wt % WO 3 , and
f. about 0.01 to about 1 wt % MnO.
4. The dielectric composition of claim 3 , further comprising one or more selected from the group consisting of:
a. BaO, provided the amount does not exceed 1.5 wt %,
b. TiO 2 , provided the amount does not exceed 1 wt %,
c. Pr 6 O 11 , provided the amount does not exceed 1 wt %,
d. CeO 2 , provided the amount does not exceed 1 wt %,
e. Nd 2 O 3 , provided the amount does not exceed 1 wt %,
f. SnO 2 , provided the amount does not exceed 1.5 wt %,
g. Nb 2 O 5 , provided the amount does not exceed 1 wt %, and
h. CuO, provided the amount does not exceed 1 wt %.
5. The dielectric composition of claim 1 wherein the composition comprises:
a. about 95 to about 97 wt % BaTiO 3 ,
b. about 0.5 to about 0.6 wt % ZnO,
c. about 0.01 to about 0.2 wt % B 2 O 3 ,
d. about 1.6 to about 2.1 wt % Bi 2 O 3 ,
e. about 0.5 to about 0.6 wt % WO 3 , and
f. about 0.01 to about 0.1 wt % MnO.
6. The dielectric composition of claim 5 , further comprising one or more selected from the group consisting of:
a. BaO, provided the amount does not exceed 0.5 wt %,
b. TiO 2 , provided the amount does not exceed 0.1 wt %,
c. Pr 6 O 11 , provided the amount does not exceed 0.3 wt %,
d. CeO 2 , provided the amount does not exceed 0.3 wt %,
e. Nd 2 O 3 , provided the amount does not exceed 0.4 wt %,
f. SnO 2 , provided the amount does not exceed 0.5 wt %,
g. Nb 2 O 5 , provided the amount does not exceed 0.1 wt %, and
h. CuO, provided the amount does not exceed 0.1 wt %.
7. The ceramic dielectric composition of claim 5 , comprising:
a. about 95.5 wt % BaTiO 3 ,
b. about 0.5 wt % ZnO,
c. about 0.1 wt % B 2 O 3 ,
d. about 2.1 wt % Bi 2 O 3 ,
e. about 0.5 wt % BaO,
f. about 0.3 wt % CeO 2 ,
g. about 0.6 wt % WO 3 ,
h. about 0.5 wt % SnO 2 ,
i. about 0.02 wt % CuO, and
j. about 0.03 wt % MnO.
8. A lead-free and cadmium-free ceramic dielectric composition for multilayer ceramic capacitor manufacturing comprising:
a. about 96 to about 97 wt % BaTiO 3 ,
b. about 0.3 to about 0.7 wt % ZnO,
c. about 0.01 to about 0.2 wt % B 2 O 3 ,
d. about 0.01 to about 2.5 wt % Bi 2 O 3 ,
e. about 0.01 to about 1.0 wt % Pr 6 O 11 +Nd 2 O 3 +CeO 2 ,
f. about 0.4 to about 0.8 wt % WO 3 , and
g. about 0.01 to about 0.2 wt % MnO.
9. A multilayer ceramic chip capacitor having a dielectric constant greater than about 4000, a dissipation factor less than about 5%, and a TCC meeting X7R requirements, the chip capacitor comprising a fired collection of alternately stacked:
a. layers of the dielectric material of claim 8 ; and
b. layers of an internal electrode material selected from the group consisting of silver, palladium, mixtures thereof and alloys thereof.
10. The dielectric composition of claim 9 , wherein BaTiO 3 is present in an amount of from about 96.2 to about 96.8 wt %.
11. The dielectric composition of claim 9 , further comprising about 0.01 to about 0.3 wt % CuO.
12. The dielectric composition of claim 9 , further comprising about 0.01 to about 0.1 wt % TiO 2 .
13. The dielectric composition of claim 9 , wherein the composition comprises:
a. about 96.4 wt % BaTiO 3 ,
b. about 0.5 wt % ZnO,
c. about 0.1 wt % B 2 O 3 ,
d. about 2.1 wt % Bi 2 O 3 ,
e. about 0.3 wt % Pr 6 O 11 ,
f. about 0.6 wt % WO 3 ,
g. about 0.02 wt % CuO, and
h. about 0.04 wt % MnO.
14. A multilayer ceramic chip capacitor having a dielectric constant greater than about 4000, a dissipation factor less than about 5%, and a TCC meeting X7R requirements, the chip capacitor comprising a fired collection of alternately stacked:
a. layers of the dielectric material of claim 13 ; and
b. layers of an internal electrode material selected from the group consisting of silver, palladium, mixtures thereof and alloys thereof.
15. The dielectric composition of claim 9 , wherein the composition comprises:
a. about 96.2 wt % BaTiO 3 ,
b. about 0.5 wt % ZnO,
c. about 0.1 wt % B 2 O 3 ,
d. about 2.1 wt % Bi 2 O 3 ,
e. about 0.1 wt % TiO 2 ,
f. about 0.3 wt % CeO 2 ,
g. about 0.1 wt % Nd 2 O 3 ,
h. about 0.6 wt % WO 3 ,
i. about 0.02 wt % CuO, and
j. about 0.04 wt % MnO.
16. The dielectric composition of claim 9 , wherein the composition comprises:
a. about 96.4 wt % BaTiO 3 ,
b. about 0.5 wt % ZnO,
c. about 0.1 wt % B 2 O 3 ,
d. about 2.1 wt % Bi 2 O 3 ,
e. about 0.3 wt % Nd 2 O 3 ,
f. about 0.6 wt % WO 3 , and
g. about 0.04 wt % MnO.
17. A multilayer ceramic chip capacitor having a dielectric constant greater than about 4000, a dissipation factor less than about 5%, and a TCC meeting X7R requirements, comprising a fired collection of alternately stacked:
a. layers of a lead-free and cadmium-free ceramic dielectric composition comprising:
i. about 85 to about 99 wt % BaTiO 3 ,
ii. about 0.05 to about 2.5 wt % ZnO,
iii. about 0.01 to about 1.5 wt % B 2 O 3 ,
iv. about 0.5 to about 4 wt % Bi 2 O 3 ,
v. about 0.05 to about 3 wt % WO 3 , and
vi. about 0.01 to about 2 wt % MnO, and
b. layers of an internal electrode material selected from the group consisting of silver, palladium, mixtures thereof and alloys thereof.
18. The multilayer ceramic chip capacitor of claim 17 wherein:
a. the layers of the lead-free and cadmium-free ceramic dielectric composition comprise:
i. about 95 to about 97 wt % BaTiO 3 ,
ii. about 0.5 to about 0.6 wt % ZnO,
iii. about 0.01 to about 0.2 wt % B 2 O 3 ,
iv. about 1.6 to about 2.1 wt % Bi 2 O 3 ,
v. about 0.5 to about 0.6 wt % WO 3 , and
vi. about 0.01 to about 0.1 wt % MnO.
19. The capacitor of claim 18 , wherein the internal electrode material comprises at least 70 wt % or more silver and 30 wt % or less palladium.
20. The capacitor of claim 17 , wherein the internal electrode material comprises at least 70 wt % or more silver and 30 wt % or less palladium.