Thin film transistor array panel and method of manufacturing the same
View Patent ↗A plurality of gate lines having gate electrodes are formed on a substrate and a semiconductor layer is formed on a gate insulating layer covering the gate lines. A plurality of data lines intersecting the gate lines are formed on the gate insulating layer and a plurality of drain electrodes are formed extending parallel with and adjacent to the data lines. Furthermore, a plurality of storage capacitor conductors are formed to be connected to the drain electrodes and to overlap an adjacent gate line. A passivation layer made of an organic material is formed on the above structure and has a contact hole. Furthermore, a plurality of pixel electrodes are formed to be electrically connected to the drain electrodes through the contact hole.
1. A thin film transistor (TFT) array panel comprising:
an insulating substrate;
a first gate line and a second gate line formed on the insulating substrate, the second gate line adjacent to the first gate line;
a gate insulating layer formed on the first and second gate lines;
a semiconductor layer formed on the gate insulating layer and overlapping a portion of the second gate line;
a first data line formed on the semiconductor layer and including a source electrode;
a drain electrode including a first portion facing the source electrode with respect to the semiconductor layer, and a second portion extending parallel with and adjacent to the first data line, the second portion extending from the first portion toward and proximate the first gate line;
a conductive layer directly connected to the drain electrode and proximate the first gate line;
an insulating layer formed on the semiconductor layer, the first data line, the drain electrode, and the conductive layer; and
a pixel electrode formed on the insulating layer and electrically connected to the conductive layer through a contact hole proximate the first gate line,
wherein the second portion of the drain electrode is located near a boundary of the pixel electrode and is covered by a black matrix.
2. The TFT array panel of claim 1 , wherein the pixel electrode covers both a second data line adjacent to the first data line and the drain electrode.
3. The TFT array panel of claim 1 , wherein the insulating layer is made of an organic insulating material.
4. The TFT array panel of claim 1 , wherein the insulating layer is made of color filters.
5. The TFT array panel of claim 1 , wherein the conductive layer extends substantially parallel to the first gate line.
6. The TFT array panel of claim 1 , wherein the conductive layer extends substantially perpendicular to the second portion of the drain electrode.
7. The TFT array panel of claim 2 , wherein the pixel electrode covers an entire width of the second data line.
8. The TFT array panel of claim 1 , wherein the drain electrode is electrically connected to a thin film transistor electrically connected to the second gate line.
9. The TFT array panel of claim 1 , wherein the conductive layer is fully covered by a portion of the first gate line.
10. A thin film transistor (TFT) array panel comprising:
an insulating substrate;
a gate line formed on the insulating substrate;
a gate insulating layer formed on the gate line;
a semiconductor layer formed on the gate insulating layer;
a first data line formed on the semiconductor layer and having a source electrode;
an insulating layer formed on or above the semiconductor layer, and the first data line; and
a pixel electrode formed on the insulating layer,
wherein the pixel electrode entirely covers two extending edges of a second data line adjacent to the first data line, the pixel electrode not being connected to the second data line and connected to the first data line through a thin film transistor, and
the pixel electrode does not overlap the first data line.
11. The TFT array panel of claim 10 , wherein the second data line is covered by a black matrix.
12. The TFT array panel of claim 10 wherein the insulating layer is made of an organic insulating material.
13. The TFT array panel of claim 10 , wherein the insulating layer is made of color filters.