Method for producing semiconductor chips using thin film technology
View Patent ↗For semiconductor chips using thin film technology, an active layer sequence is applied to a growth substrate, on which a reflective electrically conductive contact material layer is then formed. The active layer sequence is patterned to form active layer stacks, and reflective electrically conductive contact material layer is patterned to be located on each active layer stack. Then, a flexible, electrically conductive foil is applied to the contact material layers as an auxiliary carrier layer, and the growth substrate is removed.
1. A method for producing thin film semiconductor chips, the method comprising the steps:
applying an active layer sequence, which is suitable for generating electromagnetic radiation, on a growth substrate;
forming a reflective electrically conductive contact material layer on the active layer sequence;
patterning the active layer sequence and the contact material layer to form active layer stacks, which are separate from one another, on the growth substrate;
applying a flexible electrically conductive foil to the reflective electrically conductive contact material layer; and
at least partially removing the growth substrate,
wherein said electrically conductive foil is a carbon foil.
2. The method of claim 1 , wherein said electrically conductive foil has a thickness equal to or less than 100 μm.
3. The method of claim 1 , wherein the electrically conductive contact material layer contains a metal.
4. The method of claim 1 , further comprising forming a passivation layer at least on parts of side faces of the active layer stacks which are uncovered during the patterning step.
5. The method of claim 1 , further comprising applying an electrically conductive reinforcing layer to the reflective electrically conductive contact material layer.
6. The method of claim 5 , wherein the electrically conductive reinforcing layer contains a metal.
7. The method of claim 1 , further comprising, prior to removing the growth substrate, joining a rigid auxiliary carrier to the flexible electrically conductive foil.
8. The method of claim 1 , wherein, after removing the growth substrate, applying electrically conductive contact locations to a side of the active layer sequence of the active layer stacks on which the growth substrate was previously located.
9. The method of claim 8 , wherein the electrically conductive contact locations contain a metal.
10. The method of claim 8 , further comprising applying an intermediate carrier to the electrically conductive contact locations, and removing the flexible electrically conductive foil so that separated thin film semiconductor chips are present on the intermediate carrier.
11. The method of claim 10 , wherein the intermediate carrier used is a further foil.
12. The method of claim 10 , further comprising applying a passivation layer to an entire area of side faces of the active layer stacks.
13. The method of claim 8 , further comprising, following removal of the growth substrate, applying an intermediate carrier to the side of the active layer stacks on which the growth substrate was previously located, and then removing the flexible, electrically conductive foil, so that the thin film semiconductor chips are located separated on the intermediate carrier.
14. The method of claim 13 , wherein the intermediate carrier is a further foil.
15. A method for producing thin film semiconductor chips, the method comprising the steps of;
applying an active layer sequence, which is suitable for generating electromagnetic radiation, on a growth substrate;
forming a reflective electrically conductive contact material layer on the active layer sequence;
forming composite layer stacks separated from each other on the growth substrate, each of the composite layer stacks comprising a part of the active layer sequence and a part of the reflective electrically conductive contact material layer;
applying a flexible electrically conductive foil to the reflective electrically conductive contact material layer;
at least partially removing the growth substrate; and
prior to the removal of the growth substrate, joining a rigid auxiliar carrier to the flexible electrically conductive foil.
16. The method of claim 15 , wherein said electrically conductive foil is a carbon foil.
17. The method of claim 15 , further comprising applying an electrically conductive reinforcing layer to the reflective electrically conductive contact material layer.
18. A method for producing thin film semiconductor chips, the method comprising the steps:
applying an active layer sequence, which is suitable for generating electromagnetic radiation, on a growth substrate;
forming a reflective electrically conductive contact material layer on the active layer sequence;
patterning the active layer sequence and the contact material layer to form active layer stacks, which are separate from one another, on the growth substrate;
applying a flexible electrically conductive foil to the reflective electrically conductive contact material layer;
at least partially removing the growth substrate; and
prior to removing the growth substrate, joining a rigid auxiliary carrier to the flexible electrically conductive foil.
19. A method for producing thin film semiconductor chips, the method comprising the steps of
applying an active layer sequence, which is suitable for generating electromagnetic radiation, on a growth substrate;
forming a reflective electrically conductive contact material layer on the active layer sequence;
forming composite layer stacks separated from each other on the growth substrate, each of the composite layer stacks comprising a part of the active layer sequence and a part of the reflective electrically conductive contact material layer;
applying a flexible electrically conductive foil to the reflective electrically conductive contact material layer; and
at least partially removing the growth substrate,
wherein said electrically conductive foil is a carbon foil.