Method for manufacturing solid-state image pick-up device
View Patent ↗There is provided a method for manufacturing a solid-state image device which includes the steps of: forming a silicon epitaxial growth layer on a silicon substrate; forming photoelectric conversion portions, transfer gates, and a peripheral circuit portion in and/or on the silicon epitaxial growth layer and further forming a wiring layer on the silicon epitaxial growth layer; forming a split layer in the silicon substrate at a side of the silicon epitaxial growth layer; forming a support substrate on the wiring layer; peeling the silicon substrate from the split layer so as to leave a silicon layer formed of a part of the silicon substrate at a side of the support substrate; and planarizing the surface of the silicon layer.
1. A method for manufacturing a solid-state image device, comprising the steps of:
forming a silicon epitaxial growth layer on a silicon substrate;
forming photoelectric conversion portions, transfer gates, and a peripheral circuit portion in and/or on the silicon epitaxial growth layer and further forming a wiring layer on the silicon epitaxial growth layer;
forming a split layer in the silicon substrate at a side of the silicon epitaxial growth layer;
forming a support substrate on the wiring layer;
peeling the silicon substrate from the split layer so as to leave a silicon layer formed of a part of the silicon substrate at a side of the support substrate; and
planarizing the surface of the silicon layer,
wherein,
at least a region of the split layer is formed after the wiring layer is formed on the silicon epitaxial growth layer.
2. The method for manufacturing a solid-state image device according to claim 1 , wherein the silicon substrate includes a gettering layer.
3. The method for manufacturing a solid-state image device according to claim 1 or 2 , wherein the split layer is formed by performing ion implantation of hydrogen or a noble gas into the silicon substrate.
4. The method for manufacturing a solid-state image device according to claim 3 , wherein the ion implantation forming the split layer includes:
a first ion implantation forming a first split layer in the silicon substrate under pixel portions in which the photoelectric conversion portions and the transfer gates are formed in and/or on the silicon epitaxial growth layer;
a second ion implantation forming a second split layer in the silicon substrate under the peripheral circuit portion formed along the periphery of the pixel portions; and
a third ion implantation forming a third split layer in the silicon substrate under a scribe region surrounding the pixel portions and the peripheral circuit portion,
implantation energy levels of the three ion implantations are adjusted so that the first split layer, the second split layer, and the third split layer are formed at the same depth; and
the second split layer and the third split layer comprise the region that is formed after the wiring layer.