Electro-optic modulator with inverse tapered waveguides
An integrated circuit that includes an optical waveguide to convey an optical signal via an optical mode in an on-chip optical waveguide is described. In this integrated circuit, a cross-sectional area of the optical waveguide may be tapered in proximity to an electro-optic modulator in the integrated circuit, such as a germanium electro-optic modulator or a quantum-well (QW) electro-optic modulator. In particular, the cross-sectional area may be tapered from a first diameter distal from the electro-optic modulator to a second diameter proximate to the electro-optic modulator. This so-called ‘inverse taper’ may increase the spatial extent or size of the optical mode, thereby allowing the optical signal to be optically coupled to or from the electro-optic modulator with low optical loss.
1. An integrated circuit, comprising a substrate, wherein disposed on a surface of the substrate, the integrated circuit includes:
a first optical waveguide having a first end;
a second optical waveguide having a second end;
an electro-optic modulator positioned between and mechanically butt-coupled to the first end and the second end, wherein a cross-sectional area of a given optical waveguide, which can include the first optical waveguide or the second optical waveguide, is tapered from a first diameter distal from a given end, which can include the first end or the second end, to a second, smaller diameter proximate to the given end, thereby facilitating optical coupling between the given optical waveguide and the electro-optic modulator; and
an underlayer between the surface of the substrate and the electro-optic modulator.
2. The integrated circuit of claim 1 , wherein the substrate includes a semiconductor.
3. The integrated circuit of claim 2 , wherein the semiconductor includes silicon.
4. The integrated circuit of claim 1 , wherein the taper of the given optical waveguide is over a length of a region of the given optical waveguide.
5. The integrated circuit of claim 4 , wherein the length is between 10 and 200 μm.
6. The integrated circuit of claim 1 , wherein the electro-optic modulator includes a germanium electro-optic modulator.
7. The integrated circuit of claim 1 , wherein the electro-optic modulator includes a quantum-well (QW) electro-optic modulator.
8. The integrated circuit of claim 7 , wherein the QW electro-optic modulator includes alternating layers of silicon and silicon-germanium.
9. The integrated circuit of claim 1 , wherein the underlayer includes germanium.
10. The integrated circuit of claim 1 , wherein the first diameter of the given optical waveguide is less than 1 μm; and
wherein the second diameter of the given optical waveguide is less than 0.25 μm.
11. The integrated circuit of claim 1 , wherein the integrated circuit further includes an optical-coupling material between the given end and a side of the electro-optic modulator.
12. A system, comprising:
a processor; and
an integrated circuit, wherein the integrated circuit includes a substrate, and wherein disposed on a surface of the substrate, the integrated circuit includes:
a first optical waveguide having a first end;
a second optical waveguide having a second end;
an electro-optic modulator positioned between and mechanically butt-coupled to the first end and the second end, wherein a cross-sectional area of a given optical waveguide, which can include the first optical waveguide or the second optical waveguide, is tapered from a first diameter distal from a given end, which can include the first end or the second end, to a second, smaller diameter proximate to the given end, thereby facilitating optical coupling between the given optical waveguide and the electro-optic modulator; and
an underlayer between the surface of the substrate and the electro-optic modulator.
13. The system of claim 12 , wherein the substrate includes a semiconductor.
14. The system of claim 12 , wherein the taper of the given optical waveguide is over a length of a region of the given optical waveguide.
15. The system of claim 12 , wherein the electro-optic modulator includes a germanium electro-optic modulator.
16. The system of claim 12 , wherein the electro-optic modulator includes a QW electro-optic modulator.
17. The system of claim 16 , wherein the QW electro-optic modulator includes alternating layers of silicon and silicon-germanium.
18. A method for selectively optically modulating an optical signal in an integrated circuit, comprising:
conveying the optical signal using an optical mode in an optical waveguide, wherein the optical waveguide has an end and is disposed on a surface of a substrate;
increasing a spatial extent of the optical mode in proximity to the end using a taper of a cross-sectional area of the optical waveguide;
optically coupling the optical signal to an electro-optic modulator that is disposed on the surface of the substrate, and which is mechanically butt-coupled to the end, wherein an underlayer is located between the surface of the substrate and the electro-optic modulator; and
selectively optically modulating the optical signal in the electro-optic modulator based on an electrical signal.