III-V light emitting device including a light extracting structure
View Patent ↗Embodiments of the invention include a substrate comprising a host and a seed layer bonded to the host, and a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region grown over the seed layer. A variation in index of refraction in a direction perpendicular to a growth direction of the semiconductor structure is disposed between the host and the light emitting layer.
1. A device comprising:
a substrate comprising:
a host; and
a seed layer bonded to the host; and
a semiconductor structure grown over the seed layer, the semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region;
wherein a variation in index of refraction in a direction perpendicular to a growth direction of the semiconductor structure is disposed between the host and the light emitting layer.
2. The device of claim 1 further comprising a non-semiconductor layer disposed between the seed layer and the semiconductor structure, wherein
the non-semiconductor layer is patterned to form a plurality of openings; and
the semiconductor structure is grown such that semiconductor material fills in the openings in the non-semiconductor layer.
3. The device of claim 1 further comprising:
a non-semiconductor layer disposed between the seed layer and the semiconductor structure, wherein the non-semiconductor layer is patterned to form a plurality of openings; and
pores disposed in the semiconductor structure over the areas of the non-semiconductor layer disposed between the openings.
4. The device of claim 1 wherein:
the variation in index of refraction comprises portions of a bonding layer separated by gaps; and
the variation in index of refraction is disposed between the host and the seed layer.
5. The device of claim 4 wherein the gaps are filled with gas and are in direct contact with the seed layer.
6. The device of claim 4 wherein the gaps are filled with gas and are in direct contact with the host.
7. The device of claim 4 wherein the gaps are filled with gas and spaced apart from the seed layer and the host.
8. The device of claim 1 wherein the variation in index of refraction comprises a plurality of openings formed in a surface of the seed layer opposite the semiconductor structure and filled with a material having an index of refraction less than 2.
9. The device of claim 1 wherein the variation in index of refraction comprises a plurality of pores disposed at an interface between the semiconductor structure and the seed layer.
10. The device of claim 1 wherein:
the variation in index of refraction comprises a plurality of regions of first material having a first index of refraction separated by a plurality of regions of second material having a second index of refraction; and
each of the regions of first material and each of the regions of second material has a lateral extent, in the direction of the variation in index of refraction, between 100 nm and 10 microns.
11. The device of claim 1 wherein the variation in index of refraction has a height between 100 nm and 10 microns.
12. A method comprising:
providing a substrate comprising:
a host; and
a seed layer bonded to the host; and
growing on the substrate a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region;
wherein a variation in index of refraction in a direction perpendicular to a growth direction of the semiconductor structure is disposed between the host and the light emitting layer.
13. The method of claim 12 further comprising removing the host after growing the semiconductor structure.
14. The method of claim 12 further comprising forming the variation in index of refraction by:
forming a non-semiconductor layer on the seed layer;
patterning the non-semiconductor layer to form a plurality of openings; and
growing the semiconductor structure such that semiconductor material fills in the openings in the non-semiconductor layer.
15. The method of claim 12 further comprising forming the variation in index of refraction by:
forming an non-semiconductor layer on the seed layer;
patterning the non-semiconductor layer to form a plurality of openings; and
growing the semiconductor structure such that semiconductor material fills in the openings in the non-semiconductor layer and pores are formed over the areas of the non-semiconductor layer disposed between the openings.