IP Library › Granted Patent US 7,947,983
Granted Patent B2
US 7,947,983 · App. 12/688,407 · Granted May 24, 2011

Thin film transistor matrix device including first and second conducting connections formed outside an image display region

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Quick Facts
Patent No.
US 7,947,983
App. No.
12/688,407
Granted
May 24, 2011
Kind
B2
Abstract

A thin film transistor matrix device including an insulating substrate, a plurality of thin film transistors (TFTs) on the insulating substrate, and a plurality of picture element electrodes on the insulating substrate in a matrix to define an image display region. A first conducting film is on the insulating substrate. A first insulating film is on the first conducting film. A second conducting film is on the first insulating film, and a second insulating film is over the first insulating film and the second conducting film. A first conducting connection is formed, outside the image display region, to pass through the first and second insulating films, and to electrically connect the first conducting film to a third conducting film. A second conducting connection is formed, outside the image display region, to pass through the second insulating film and to electrically connect the second conducting film to the third conducting film.

Claims (44)

1. A thin film transistor matrix device comprising:

an insulating substrate;

a plurality of thin film transistors arranged on the insulating substrate in a matrix;

a plurality of picture element electrodes arranged on the insulating substrate in a matrix to define an image display region, and wherein the picture element electrodes are connected to the thin film transistors;

a first conducting film formed on the insulating substrate;

a first insulating film formed on the first conducting film;

a second conducting film formed on the first insulating film; and

a second insulating film formed over the first insulating film and the second conducting film;

a first conducting connection formed, outside the image display region, to pass through the first insulating film and the second insulating film and to electrically connect the first conducting film to a third conducting film, and

a second conducting connection formed, outside the image display region, to pass through the second insulating film and to electrically connect the second conducting film to the third conducting film, and

wherein the third conducting film is a transparent film and wherein the third conducting film is located in an area between the image display region and an edge of the insulating substrate.

2. The thin film transistor matrix device according to claim 1 , wherein said first conducting connection is electrically connected to said second conducting connection.

3. The thin film transistor matrix device according to claim 1 , wherein said first conducting connection and said second conducting connection are both formed of the third conducting film.

4. The thin film transistor matrix device according to claim 2 , wherein said first conducting connection and said second conducting connection are both formed of the third conducting film.

5. The thin film transistor matrix device according to claim 1 , wherein said first conducting connection comprises a contact hole.

6. The thin film transistor matrix device according to claim 1 , wherein said second conducting connection comprises a contact hole.

7. The thin film transistor matrix device according to claim 1 , wherein:

said first conducting connection comprises a first contact hole; and

said second conducting connection comprises a second contact hole.

8. The thin film transistor matrix device according to claim 1 , wherein:

said first conducting connection is on a first wiring line where the first conducting film comprises the first wiring line; and

said second conducting connection is on a second wiring line where the second conducting film comprises the second wiring line.

9. The thin film transistor matrix device according to claim 8 , wherein:

said first wiring line extends in a first direction, for at least a portion thereof; and

said second wiring line extends in a second direction, for at least in a portion thereof, and where said second direction is different from said first direction.

10. The thin film transistor matrix device according to claim 9 , wherein:

said first direction is a generally widthwise direction; and

said second direction is a generally lengthwise direction.

11. The thin film transistor matrix device of claim 1 , wherein said third conducting film is formed together with and of the same material as the picture element electrodes.

12. The thin film transistor matrix device of claim 1 , wherein said second insulating film comprises first and second insulating layers of different insulating materials.

13. The thin film transistor matrix device according to claim 1 , wherein the second conducting connection is closer to the edge of the insulating substrate than the first conducting connection.

14. A liquid crystal display device comprising:

a thin film transistor matrix device including:

an insulating substrate;

a plurality of thin film transistors arranged on the insulating substrate in a matrix;

a plurality of picture element electrodes arranged on the insulating substrate in a matrix to define an image display region, and wherein the picture element electrodes are connected to the thin film transistors;

a first conducting film formed on the insulating substrate;

a first insulating film formed on the first conducting film;

a second conducting film formed on the first insulating film; and

a second insulating film formed over the first insulating film and the second conducting film;

a first conducting connection formed, outside the image display region, to pass through the first insulating film and the second insulating film and to electrically connect the first conducting film to a third conducting film, and

a second conducting connection formed, outside the image display region, to pass through the second insulating film and to electrically connect the second conducting film to the third conducting film, and

wherein the third conducting film is a transparent film and wherein the third conducting film is located in an area between the image display region and an edge of the insulating substrate.

15. The liquid crystal display device according to claim 14 , wherein the second conducting connection is closer to the edge of the insulating substrate than the first conducing connection.