IP Library Granted Patent US 7,858,528
Granted Patent B2
US 7,858,528 · App. 12/689,773 · Granted Dec 28, 2010

Positive tone bi-layer method

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Quick Facts
Patent No.
US 7,858,528
App. No.
12/689,773
Granted
Dec 28, 2010
Kind
B2
Abstract

Methods of patterning a substrate including creating a multi-layered structure by forming, on the substrate, a patterned layer having protrusions and recessions are described. A polymerizable material composition is dispense on the patterned layer defining a conformal layer, with the multi-layered structure having a crown surface facing away from the substrate. Portions of the multi-layered structure are removed to expose regions of the substrate in superimposition with the protrusions, while forming a hard mask in areas of the crown surface in superimposition with the recessions.

Claims (21)

1. A method of patterning a substrate, the method comprising:

forming a patterned layer on a substrate, the patterned layer having protrusions and recessions;

dispensing polymerizable material on the patterned layer, defining a conformal layer, the patterned layer and the conformal layer collectively defining a multi-layered structure, the multi-layered structure having a crown surface facing away from the substrate; and,

selectively removing portions of the multi-layered structure to expose regions of the substrate in superimposition with the protrusions while forming a hard mask in areas of the crown surface in superimposition with the recessions.

2. The method as recited in claim 1 , wherein forming the patterned layer further includes providing the protrusions with an apex and a height.

3. The method as recited in claim 2 , wherein defining the conformal layer further includes providing the conformal layer with a normalization surface spaced-apart from one apex a minimum distance and spaced-apart from an additional apex a maximum distance with the height being greater than a difference between the maximum distance and the minimum distance.

4. The method as recited in claim 1 , wherein the conformal layer is defined using silicon-containing polymerizable material.

5. The method as recited in claim 1 , wherein the conformal layer is defined by dispensing, on the substrate, a polymerizable fluid composition and contacting the polymerizable fluid composition with a mold having a substantially planar surface and subjecting the polymerizable fluid composition to conditions to polymerize the polymerizable fluid composition.

6. The method as recited in claim 1 , further including depositing a primer layer between the patterned layer and the substrate.

7. The method as recited in claim 1 , wherein the conformal layer is defined with a section having a normalization surface disposed opposite to the patterned layer and spaced-apart from the protrusions.

8. The method as recited in claim 7 , further including removing portions of the section to expose the protrusions, defining the crown surface and exposing the crown surface to an etch chemistry.

9. A method of patterning a substrate, the method comprising:

creating a multi-layered structure with e-beam lithography by forming, on the substrate, a patterned layer having protrusions and recessions, by dispensing, on the substrate, droplets of polymerizable fluid composition and contacting the polymerizable fluid composition with a surface of a mold, and subjecting the polymerizable fluid composition to conditions to polymerize the polymerizable fluid composition, forming the patterned layer, and forming, upon the patterned layer, a conformal layer, with the multi-layered structure having a crown surface facing away from the substrate; and

selectively removing portions of the multi-layered structure to expose regions of the substrate in superimposition with the protrusions while forming a hard mask in areas of the crown surface in superimposition with the recessions.

10. The method as recited in claim 9 , wherein forming the patterned layer further includes providing the protrusions with an apex and a height.

11. The method as recited in claim 10 , wherein forming the conformal layer further includes providing the conformal layer with a normalization surface spaced-apart from one apex a minimum distance and spaced-apart from an additional apex a maximum distance with the height being greater than a difference between the maximum distance and the minimum distance.

12. The method as recited in claim 9 , wherein creating further includes forming the conformal layer from a silicon-containing polymerizable material.

13. The method as recited in claim 9 , further including depositing a primer layer between the patterned layer and the substrate.

14. The method as recited in claim 9 , wherein creating further includes forming the conformal layer with a section having a normalization surface disposed opposite to the patterned layer and spaced-apart from the protrusions.

15. The method as recited in claim 14 , further including removing portions of the section to expose the protrusions, defining the crown surface and exposing the crown surface to an etch chemistry.

16. The method as recited in claim 15 , wherein removing portions further includes subjecting the normalization surface to a blanket etch and exposing the crown surface further includes subjecting the crown surface to an anisotropic plasma etch.

Assignments (2)
ASSIGNMENT OF SECURITY INTEREST IN PATENTS Recorded Nov 7, 2019
From: JPMORGAN CHASE BANK, N.A.
To: CITIBANK, N.A.
Reel/Frame 050967/0138 →
PATENT SECURITY AGREEMENT Recorded Aug 22, 2019
From: MAGIC LEAP, INC.; MOLECULAR IMPRINTS, INC.; MENTOR ACQUISITION ONE, LLC
To: JP MORGAN CHASE BANK, N.A.
Reel/Frame 050138/0287 →