Thin film transistor, method of manufacturing the same, and flat panel display device having the same
View Patent ↗A thin film transistor using an oxide semiconductor as an active layer, and its method of manufacture. The thin film transistor includes: a substrate; an active layer formed of an oxide semiconductor; a gate insulating layer formed of a dielectric on the active layer, the dielectric having an etching selectivity of 20 to 100:1 with respect to the oxide semiconductor; a gate electrode formed on the gate insulating layer; an insulating layer formed on the substrate including the gate electrode and having contact holes to expose the active layer; and source and drain electrodes connected to the active layer through the contact holes. Since the source and drain electrodes are not overlapped with the gate electrode, parasitic capacitance between the source and drain electrodes and the gate electrode is minimized. Since the gate insulating layer is formed of dielectric having a high etching selectivity with respect to oxide semiconductor, the active layer is not deteriorated.
1. A thin film transistor, comprising:
a substrate;
an active layer comprised of zinc oxide (ZnO);
a gate insulating layer formed of a dielectric on the active layer, the dielectric having an etching selectivity of 20 to 100:1 with respect to the zinc oxide active layer;
a gate electrode formed on the gate insulating layer;
an insulating layer formed on the substrate including the gate electrode and having contact holes to expose the active layer at both sides of the gate electrode; and
source and drain electrodes connected to the active layer through the contact holes.
2. The thin film transistor as claimed in claim 1 wherein the zinc oxide active layer is doped with at least one ion of gallium (Ga), indium (In), tin (Sn), zirconium (Zr), hafnium (Hf), and vanadium (V).
3. The thin film transistor as claimed in claim 1 , wherein the dielectric has a dielectric constant of 3 to 30.
4. The thin film transistor as claimed in claim 3 , wherein the dielectric comprises at least one selected from a group consisting of aluminum oxide (AlxOy), hafnium oxide (HfxOy), yttrium oxide (YxOy), zirconium oxide (ZrxOy), and Gallium oxide (GaOx), where x and y are 1 to 3.
5. The thin film transistor as claimed in claim 1 , wherein the source and drain electrodes do not overlap with the gate electrode.
6. The thin film transistor as claimed in claim 1 , further comprising a buffer layer formed between the substrate and the active layer.
7. A method of manufacturing a thin film transistor, comprising:
sequentially forming a zinc oxide layer, a dielectric layer, and a conductive layer on a substrate;
forming a gate electrode by patterning the conductive layer
forming a gate insulating layer by patterning the dielectric layer using the gate electrode as a mask, wherein the dielectric layer has an etching selectivity of 20 to 100:1 with respect to the zinc oxide layer;
forming the active layer by patterning the zinc oxide layer;
forming an insulating layer on the substrate including the gate electrode and forming contact holes to expose the active layer at both sides of the gate electrode; and
forming source and drain electrodes connected to the active layer through the contact hole in the insulating layer.
8. The method as claimed in claim 7 , wherein the zinc oxide active layer is doped with at least one ion selected from a group consisting of gallium (Ga), indium (In), tin (Sn), zirconium (Zr), hafnium (Hf), and vanadium (V).
9. The method as claimed in claim 7 , wherein the dielectric layer comprises at least one material selected from a group consisting of aluminum oxide (AlxOy), hafnium oxide (HfxOy), yttrium oxide (YxOy), zirconium oxide (ZrxOy), and Gallium oxide (GaOx).
10. The method as claimed in claim 7 , wherein the dielectric layer is patterned by dry etching process.
11. The method as claimed in claim 7 , wherein the source and drain electrodes do not overlap with the gate electrode.
12. A flat panel display device, comprising:
a first substrate in which a plurality of pixels are defined by a plurality of first conductive lines and second conductive lines, a thin film transistor controlling signals to be supplied to the respective pixels, and a first electrode connected to the thin film transistor is formed;
a second substrate in which a second electrode is formed; and
a liquid crystal layer injected into a sealed space between the first electrode and the second electrode;
wherein the thin film transistor comprises:
an active layer that includes zinc oxide and being arranged on the first substrate with:
a gate insulating layer formed of a dielectric on the active layer, the dielectric having an etching selectivity of 20 to 100:1 with respect to the active layer;
a gate electrode formed on the gate insulating layer;
an insulating layer formed on the substrate including the gate electrode and having contact holes to expose the active layer at both sides of the gate electrode; and
source and drain electrodes connected to the active layer through the contact holes.
13. The flat panel display device as claimed in claim 12 wherein the active layer is doped with at least one ion of gallium (Ga), indium (In), tin (Sn), zirconium (Zr), hafnium (Hf), and vanadium (V).
14. The flat panel display device as claimed in claim 12 , wherein the dielectric has a dielectric constant of 3 to 30.
15. The flat panel display device as claimed in claim 12 wherein the dielectric comprises at least one material selected from a group consisting of yttrium oxide (YxOy), zirconium oxide (ZrxOy), and Gallium oxide (GaOx).
16. The flat panel display device as claimed in claim 12 , wherein the source and drain electrodes do not overlap with the gate electrode.
17. A flat panel display device, comprising:
an organic light emitting diode including a first substrate in which a first electrode, an organic thin film, and a second electrode and a thin film transistor controlling the organic light emitting diode are formed; and
a second substrate disposed to face the first substrate, wherein the thin film transistor comprises:
a zinc oxide active layer arranged on the first substrate;
a gate insulating layer formed of a dielectric on the active layer, the dielectric having an etching selectivity of 20 to 100:1 with respect to the active layer;
a gate electrode formed on the gate insulating layer;
an insulating layer formed on the substrate including the gate electrode and having contact holes to expose the active layer at both sides of the gate electrode; and
source and drain electrodes connected to the active layer through the contact holes.
18. The flat panel display device as claimed in claim 17 wherein the active layer is doped with at least one ion selected from a group consisting of gallium (Ga), indium (In), tin (Sn), zirconium (Zr), hafnium (Hf), and vanadium (V).
19. The flat panel display device as claimed in claim 17 , wherein the dielectric has a dielectric constant of 3 to 30.
20. The flat panel display device as claimed in claim 19 , wherein the dielectric comprises at least one selected from a group consisting of aluminum oxide (AlxOy), hafnium oxide (HfxOy), yttrium oxide (YxOy), zirconium oxide (ZrxOy), and Gallium oxide (GaOx).
21. The flat panel display device as claimed in claim 17 , wherein the source and drain electrodes do not overlap with the gate electrode.
22. The thin film transistor of claim 1 , wherein the zinc oxide active layer is doped with at least one ion of gallium (Ga) and tin (Sn).
23. The thin film transistor of claim 1 , wherein the dielectric comprises at least one material selected from a group consisting of yttrium oxide (YxOy), zirconium oxide (ZrxOy), and Gallium oxide (GaOx), where x and y are 1 to 3.
24. The flat panel display device of claim 12 , wherein the zinc oxide active layer is doped with at least one ion of gallium (Ga) and tin (Sn).
25. The flat panel display device of claim 17 , wherein the zinc oxide active layer is doped with at least one ion of gallium (Ga) and tin (Sn).
26. The flat panel display device of claim 17 wherein the dielectric comprises at least one material selected from a group consisting of yttrium oxide (YxOy), zirconium oxide (ZrxOy), and Gallium oxide (GaOx), where x and y are 1 to 3.