Method for forming multilayer structure, method for manufacturing display panel, and display panel
View Patent ↗A method for forming a multilayer includes a process for forming a first conductive layer on a substrate; a process for forming a first insulating layer on the first conductive layer; a process for forming a second conductive layer on the first insulating layer and patterning the deposited second conductive layer; a process for forming a second insulating layer over the substrate so as to cover the patterned the second conductive layer; a process for forming a third insulating layer on the second insulating layer, wherein an etching speed of the third insulating layer is faster than that of the second insulating layer; and a process for forming contact holes at once that expose at least a part of the first conductive layer to the first insulating layer, the second insulating layer and the third insulating layer.
1. A method for forming a multilayer structure, comprising:
forming a first conductive layer on a substrate;
forming a first insulating layer on the first conductive layer;
forming a patterned second conductive layer on the first insulating layer;
forming a second insulating layer over the substrate so as to cover the patterned second conductive layer;
forming a third insulating layer on the second insulating layer, wherein an etching speed of the third insulating layer is faster than an etching speed of the second insulating layer for a prescribed etching method; and
forming a contact hole that penetrates through the first insulating layer, the second insulating layer and the third insulating layer at once using the prescribed etching method to expose at least a part of the first conductive layer, wherein a portion of the first insulating layer exposed by the contact hole has a first surface that is inclined with respect to a surface of the substrate and a second surface that is substantially parallel to the surface of the substrate, and the second surface of the first insulating layer has a substantially flat top surface profile adjacent to a boundary with the second insulating layer,
wherein constituent elements of processing gases used for forming the first insulating layer are the same as constituent elements of processing gases used for forming the second insulating layer, and flow rates of the constituent elements of the processing gases in forming the first insulating layer are the same as corresponding flow rates of the constituent elements of the processing gases in forming the second insulating layer.
2. The method according to claim 1 , wherein the first insulating layer, the second insulating layer and the third insulating layer are formed of an inorganic material.
3. The method according to claim 2 , wherein the first insulating layer, the second insulating layer and the third insulating layer are formed of silicon nitride.
4. The method according to claim 2 , wherein the third insulating layer is formed so as to contain more nitrogen than the second insulating layer.
5. The method according to claim 4 , wherein the prescribed etching method uses an etching gas including CF 4 or SF 6 .
6. The method according to claim 1 , further comprising:
forming a third conductive layer on an area where the contact hole is formed after forming the contact hole.
7. The method according to claim 1 , wherein a thickness of the second insulating layer is about 1,500 Å or more, and a thickness of the third insulating layer is about 20 Å to about 300 Å.
8. The method according to claim 1 ,
wherein the first insulating layer is a first silicon nitride layer,
wherein the second insulating layer is a second silicon nitride layer, and
wherein the third insulating layer is a third silicon nitride layer containing more nitrogen than the second silicon nitride layer.
9. The method according to claim 1 ,
wherein the second insulating layer is formed by chemical vapor deposition using a first gas and a second gas, and
wherein the third insulating layer is formed by chemical vapor deposition using the first gas and the second gas, a flow rate of the second gas relative to the first gas in forming the third insulating layer being larger than the flow rate of the second gas relative to the first gas in forming the second insulating layer.
10. The method according to claim 9 , wherein the first gas is silane, and the second gas is ammonia.
11. The method according to claim 10 , wherein the steps of forming the second and third insulating layers includes use of a nitrogen gas as a diluent.
12. The method according to claim 10 , wherein the third insulating layer is formed so as to contain more nitrogen than the second insulating layer.
13. The method according to claim 9 , wherein the flow rate of the first gas in forming the second insulating layer is substantially equal to the flow rate of the first gas in forming the third insulating layer.
14. The method according to claim 9 , wherein the first insulating layer is formed by chemical vapor deposition using the first gas and the second gas.
15. The method according to claim 9 , further comprising:
forming a third conductive layer on an area where the contact hole is formed after forming the contact hole.
16. The method according to claim 9 , wherein a thickness of the second insulating layer is about 1,500 Å or more, and a thickness of the third insulating layer is about 20 Å to about 300 Å.
17. The method according to claim 1 , wherein the constituent elements of processing gases used for forming the second insulating layer are the same as constituent elements of processing gases used for forming the third insulating layer, and flow rates of the constituent elements of processing gases in forming the third insulating layer are different from the corresponding flow rates of the constituent elements of processing gases in forming the first and second insulating layers.
18. The method according to claim 17 , wherein constituent elements of the first insulating layer are the same as constituent elements of the second and third insulating layers.