Electromigration reduction in micro-hotplates
View Patent ↗A micro-hotplate is provided in the form of a device comprising a sensor and one or more resistive heaters within the micro-hotplate arranged to heat the sensor. Furthermore a controller is provided for applying a bidirectional drive current to at least one of the heaters to reduce electromigration. The controller also serves to drive the heater at a substantially constant temperature.
1. A micro-hotplate comprising a sensor and one or more resistive heaters arranged to heat the sensor, wherein a controller is provided for applying a bidirectional drive current to at least one of the heaters to reduce electromigration.
2. The micro-hotplate according to claim 1 , wherein the controller serves to drive said at least one heater at a substantially constant temperature.
3. The micro-hotplate according to claim 1 , wherein the controller serves to apply the bidirectional current to said at least one heater but not to at least one other of the heaters.
4. The micro-hotplate according to claim 1 wherein the heater is provided in a dielectric membrane layer supported by a silicon substrate.
5. The micro-hotplate according to claim 1 , which has been manufactured by a series of processing steps selected from the group comprising CMOS process and SOI process.
6. The micro-hotplate according to claim 1 , wherein the heater comprises a metal selected from the group comprising aluminium, tungsten, copper, titanium and a CMOS metal layer.
7. The micro-hotplate according to claim 1 , further comprising at least one heat spreading plate.
8. The micro-hotplate according to claim 1 , wherein the controller is a CMOS based electronic circuit, monolithically integrated with the device.
9. The micro-hotplate according to claim 1 , wherein the controller is arranged to apply a continuous bidirectional drive current of a form selected from the group comprising a sinusoidal wave and a square wave.
10. The micro-hotplate according to claim 9 , wherein the controller serves to control the sinusoidal wave with a time constant substantially less than a thermal transient time constant of the heater.
11. The micro-hotplate according to claim 1 , wherein the controller is arranged to apply a pulsed bidirectional drive current in which the direction of the current changes within each pulse.
12. The micro-hotplate according claim 11 , wherein the pulsed bidirectional drive current has a pulse period substantially greater than a thermal transient time period of the heater.
13. The micro-hotplate according to claim 1 , wherein the controller is arranged to apply a pulsed bidirectional drive current supplied by a constant voltage in which the polarity of the voltage changes within each pulse.
14. The micro-hotplate according to claim 1 , wherein the controller includes a pulse width modulation system for driving the heater.
15. The micro-hotplate according to claim 1 , wherein the controller includes a MOSFET driver to switch the current polarity of the bidirectional drive current.
16. An array of micro-hotplates located on a chip wherein each micro-hotplate of the array is in accordance with claim 1 .
17. A gas sensor, comprising a gas sensing material, and the micro-hotplate according to claim 1 .
18. An infra-red emitter incorporating the micro-hotplate according to claim 1 .
19. A flow sensor or a sheer stress sensor incorporating the micro-hotplate according to claim 1 .
20. A micro-hotplate in the form of a device comprising a sensor and one or more resistive heaters arranged to heat the sensor, wherein a controller is provided for applying a bidirectional drive current to at least one of the heaters to reduce ion diffusion.
21. The micro-hotplate according to claim 20 , wherein the heater comprises a semiconductor selected from the group comprising polysilicon and single crystal silicon.
22. The micro-hotplate according to claim 21 , wherein the semiconductor is a doped or undoped semiconductor.
23. A method of manufacturing a micro-hotplate comprising a sensor and one or more resistive heaters arranged to heat the sensor, the method comprising: applying a bidirectional drive current to at least one of the heaters to reduce electromigration.
24. The method according to claim 23 , wherein said at least one heater is driven at a substantially constant temperature.
25. The method according to claim 23 , wherein the heater is formed in a dielectric membrane layer and the membrane layer is formed using a back etching technique.
26. The method according to claim 25 , wherein the back etching is carried out by a technique selected from the group comprising deep reactive ion etching and wet etching.