Structure and method for flexible sensor array
View Patent ↗A method of forming a sensor array. The method includes depositing a source/drain contact layer; depositing a semiconductor layer on the source/drain contact layer; and patterning the source/drain contact layer and the semiconductor layer substantially simultaneously, wherein the patterned semiconductor layer forms part of a sensor of the sensor array.
1. A flexible sensor array, comprising:
a flexible substrate;
a gate contact disposed on the substrate;
a gate insulator disposed on the gate contact;
a semiconductor island disposed on the gate insulator;
a first contact structure disposed on the semiconductor island, the first contact structure having a first contact layer disposed on the semiconductor island and a first conductive contact disposed on the contact layer;
a second contact structure disposed on the semiconductor island, the second contact structure having a second contact layer disposed on the semiconductor island, a second conductive contact disposed on the second contact layer, and a first sensor semiconductor layer disposed on the second contact layer;
an encapsulation layer covering and separating the first and second contact structures, and covering the semiconductor island;
an opening in the encapsulation layer exposing the first sensor semiconductor layer of the second contact structure;
a second sensor semiconductor layer formed in the opening and extending over the encapsulation layer; and
a third sensor semiconductor layer formed on the second sensor semiconductor layer.
2. The flexible sensor array of claim 1 , wherein the first contact structure comprises a doped semiconductor layer disposed on the first conductive contact layer.
3. The flexible sensor array of claim 1 , wherein the first and second contact layers comprise n-type semiconductor material.
4. The flexible sensor array of claim 1 , wherein the first sensor semiconductor layer comprises an n-type semiconductor layer, the second sensor semiconductor layer comprises an intrinsic semiconductor layer, and the third sensor semiconductor layer comprises a p-type semiconductor layer, the first, second and third sensor layers forming a PIN sensor.
5. The flexible sensor array of claim 1 , wherein the second sensor semiconductor layer has a thickness of at least 1 micrometer.